Fraunhofer-Institut für Angewandte Festkörperphysik IAF2021
| Jahr | Autor/Titel/Quelle | Dokumentart |
|---|---|---|
| 2021 | Wolff, Niklas; Fichter, Simon; Haas, Benedikt; Islam, Md Redwanul; Niekiel, Florian; Kessel, Maximilian; Ambacher, Oliver; Koch, Christoph; Wagner, Bernhard; Lofink, Fabian; Kienle, Lorenz:
Atomic scale confirmation of ferroelectric polarization inversion in wurtzite-type AlScN In: Journal of applied physics, Vol.129 (2021), No.3, Art. 034103, 10 pp. | Zeitschriftenaufsatz |
| 2021 | Reiner, Richard; Lerner, Ralf; Waltereit, Patrick; Hansen, Nis Hauke; Mönch, Stefan; Fecioru, Alin; Gomez, David:
Characteristics of hetero-integrated GaN-HEMTs on CMOS technology by micro-transfer-printing (International Symposium on Power Semiconductor Devices and ICs (ISPSD) <33, 2021, Online>) In: Institute of Electrical and Electronics Engineers -IEEE-: 33rd International Symposium on Power Semiconductor Devices and ICs, ISPSD 2021: May 30 - June 3, 2021, Nagoya, Full Virtual Conference. Piscataway, NJ: IEEE, 2021, pp. 323-326 | Konferenzbeitrag |
| 2021 | Reiner, Richard; Benkhelifa, Fouad; Mönch, Stefan; Basler, Michael; Waltereit, Patrick; Mikulla, Michael; Quay, Rüdiger; Ambacher, Oliver:
Design of low-resistance and area-efficient GaN-HEMTs for low-voltage power applications (PCIM Europe Digital Days <2021, Online>) In: MESAGO Messe Frankfurt GmbH, Stuttgart: PCIM Europe digital days 2021: International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management Proceedings, 3 - 7 May 2021, CD-ROM. Berlin: VDE-Verlag, 2021, pp. 401-408 | Konferenzbeitrag |
| 2021 | Urban, D.F.; Ambacher, Oliver; Elsässer, C.:
First-principles calculation of electroacoustic properties of wurtzite (Al,Sc)N In: Physical Review. B, Vol.103 (2021), No.11, Art. 115204, 13 pp. | Zeitschriftenaufsatz |
| 2021 | Basler, Michael; Reiner, Richard; Mönch, Stefan; Waltereit, Patrick; Quay, Rüdiger; Kallfass, Ingmar; Ambacher, Oliver:
A GaN-based active diode circuit for low-loss rectification (International Symposium on Power Semiconductor Devices and ICs (ISPSD) <33, 2021, Online>) In: Institute of Electrical and Electronics Engineers -IEEE-: 33rd International Symposium on Power Semiconductor Devices and ICs, ISPSD 2021: May 30 - June 3, 2021, Nagoya, Full Virtual Conference. Piscataway, NJ: IEEE, 2021, pp. 59-62 | Konferenzbeitrag |
| 2021 | Doering, Philipp; Driad, Rachid; Leone, Stefano; Müller, Stefan; Waltereit, Patrick; Kirste, Lutz; Polyakov, Vladimir M.; Mikulla, Michael; Ambacher, Oliver:
Growth and fabrication of quasivertical current aperture vertical electron transistor structures In: Physica status solidi. A, Vol.218 (2021), No.32, Art. 2000379, 7 pp. | Zeitschriftenaufsatz |
| 2021 | Basler, Michael; Mönch, Stefan; Reiner, Richard; Benkhelifa, Fouad; Quay, Rüdiger; Ambacher, Oliver; Weidinger, Gerald; Weis, Gerald; Kallfass, Ingmar:
High-power density DC-DC converters using highly-integrated half-bridge GaN ICs (PCIM Europe Digital Days <2021, Online>) In: MESAGO Messe Frankfurt GmbH, Stuttgart: PCIM Europe digital days 2021: International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management Proceedings, 3 - 7 May 2021, CD-ROM. Berlin: VDE-Verlag, 2021, pp. 1014-1021 | Konferenzbeitrag |
| 2021 | Manz, Christian; Leone, Stefano; Kirste, Lutz; Ligl, Jana; Frei, Kathrin; Fuchs, Theodor; Prescher, Mario; Waltereit, Patrick; Verheijen, Marcel A.; Graff, Andreas; Simon-Najasek, Michél; Altmann, Frank; Fiederle, Michael; Ambacher, Oliver:
Improved AlScN/GaN heterostructures grown by metal-organic chemical vapor deposition In: Semiconductor Science and Technology, Vol.36 (2021), No.3, Art. 034003, 10 pp. | Zeitschriftenaufsatz |
| 2021 | Mönch, Stefan; Reiner, Richard; Waltereit, Patrick; Quay, Rüdiger; Ambacher, Oliver; Kallfass, Ingmar:
Investigation of GaN-on-Si and GaN-on-SOI substrate capacitances for discrete and monolithic half-bridges (International Symposium on Power Semiconductor Devices and ICs (ISPSD) <33, 2021, Online>) In: Institute of Electrical and Electronics Engineers -IEEE-: 33rd International Symposium on Power Semiconductor Devices and ICs, ISPSD 2021: May 30 - June 3, 2021, Nagoya, Full Virtual Conference. Piscataway, NJ: IEEE, 2021, pp. 335-338 | Konferenzbeitrag |
| 2021 | Neininger, Philipp; John, Laurenz; Thome, Fabian; Friesicke, Christian; Brueckner, Peter; Quay, Rüdiger; Zwick, Thomas:
Limitations and Implementation Strategies of Interstage Matching in a 6-W, 28-38-GHz GaN Power Amplifier MMIC In: IEEE transactions on microwave theory and techniques, Vol.69 (2021), No.5, pp.2541-2553 | Zeitschriftenaufsatz |
| 2021 | Doering, Philipp; Driad, Rachid; Reiner, Richard; Waltereit, Patrick; Mikulla, Michael:
Metal organic chemical vapour deposition regrown large area GaN-on-GaN current aperture vertical electron transistors with high current capability In: Electronics Letters, Vol.57 (2021), No.3, pp.145-147 | Zeitschriftenaufsatz |
| 2021 | Mönch, Stefan; Müller, Stefan; Reiner, Richard; Waltereit, Patrick; Czap, Heiko; Basler, Michael; Hückelheim, Jan; Kirste, Lutz; Kallfass, Ingmar; Quay, Rüdiger; Ambacher, Oliver:
Monolithic integrated AlGaN/GaN power converter topologies on high-voltage AlN/GaN superlattice buffer In: Physica status solidi. A, Vol.218 (2021), No.3, Art. 2000404, 9 pp. | Zeitschriftenaufsatz |
| 2021 | Mönch, Stefan; Reiner, Richard; Waltereit, Patrick; Benkhelifa, Fouad; Hückelmheim, Jan; Meder, Dirk; Zink, Martin; Kaden, Thomas; Noll, Stefan; Mansfeld, Sebastian; Mingirulli, Nicola; Quay, Rüdiger; Kallfass, Ingmar:
PCB-Embedded GaN-on-Si Half-Bridge and Driver ICs with On-Package Gate and DC-Link Capacitors In: IEEE transactions on power electronics, Vol.36 (2021), No.1, pp.83-86 | Zeitschriftenaufsatz |
| 2021 | Ambacher, Oliver; Christian, B.; Yassine, Mohammed Fadi; Baeumler, Martina; Leone, Stefano; Quay, Rüdiger:
Polarization induced interface and electron sheet charges of pseudomorphic ScAlN/GaN, GaAlN/GaN, InAlN/GaN, and InAlN/InN heterostructures In: Journal of applied physics, Vol.129 (2021), Art. 204501, 15 pp. | Zeitschriftenaufsatz |
| 2021 | Dammann, Michael; Baeumler, Martina; Kemmer, Tobias; Konstanzer, Helmer; Brueckner, Peter; Krause, Sebastian; Graff, Andreas; Simon-Najasek, Michél:
Reliability and failure analysis of 100 nm AlGaN/GaN HEMTs under DC and RF Stress (International Reliability Physics Symposium (IRPS) <2021, Online>) In: Institute of Electrical and Electronics Engineers -IEEE-: IEEE International Reliability Physics Symposium, IRPS 2021. Proceedings: Virtual Conference, 21 March - 24 March 2021. Piscataway, NJ: IEEE, 2021, 7 pp. | Konferenzbeitrag |
| 2021 | Österlund, Elmeri; Ross, Glenn; Caro, Miguel; Paulasto-Kröckel, Mervi; Hollmann, Andreas; Klaus, Manuela; Meixner, Matthias; Genzel, Christoph; Koppinen, Panu; Pensala, Tuomas; Zukauskaite, Agne; Trebala, Michael:
Stability and residual stresses of sputtered wurtzite AlScN thin films In: Physical review materials, Vol.5 (2021), No.3, Art. 035001, 14 pp. | Zeitschriftenaufsatz |
| 2021 | Mönch, Stefan; Reiner, Richard; Benkhelifa, Fouad; Basler, Michael; Waltereit, Patrick; Quay, Rüdiger:
A three-phase GaN-on-Si inverter IC for low-voltage motor drives (PCIM Europe Digital Days <2021, Online>) In: MESAGO Messe Frankfurt GmbH, Stuttgart: PCIM Europe digital days 2021: International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management Proceedings, 3 - 7 May 2021, CD-ROM. Berlin: VDE-Verlag, 2021, pp. 409-415 | Konferenzbeitrag |
Diese Publikationsliste wurde aus der Publikationsdatenbank Fraunhofer-Publica erstellt.