Publikationen des Geschäftsfelds Leistungselektronik

2017

JahrAutor/Titel/QuelleDokumentart
2017Probst, Thorsten; Doerner, Ralf; Ohlrogge, Matthias; Lozar, Roger; Arz, Uwe:
110 GHz on-wafer measurement comparison on alumina substrate
(Microwave Measurement Conference <90, 2017, Boulder/Colo.>)
In: Ginley, R.: 90th ARFTG Microwave Measurement Conference 2017: November 30th-December 1st, 2017, St. Julien Hotel, Boulder, Colorado. Piscataway, NJ: IEEE, 2017, pp. 7-10
Konferenzbeitrag
2017Lymperakis, Liverios; Neugebauer, Jörg; Himmerlich, Marcel; Krischok, Stefan; Rink, Michael; Kröger, Jörg; Polyakov, Vladimir:
Adsorption and desorption of hydrogen at nonpolar GaN(1¯100) surfaces: Kinetics and impact on surface vibrational and electronic properties
In: Physical Review. B, Vol.95 (2017), No.19, Art. 195314, 11 pp.
Zeitschriftenaufsatz
2017Godejohann, Birte-Julia; Ture, Erdin; Müller, Stefan; Prescher, Mario; Kirste, Lutz; Aidam, Rolf; Polyakov, Vladimir; Brueckner, Peter; Breuer, Steffen; Köhler, Klaus; Quay, Rüdiger; Ambacher, O.:
AlN/GaN HEMTs grown by MBE and MOCVD: Impact of Al distribution
In: Physica status solidi. B, Vol.254 (2017), No.8, Art. 1600715, 5 pp.
Zeitschriftenaufsatz
2017Shokhovets, Sviatoslav; Kirste, Lutz; Leach, Jacob H.; Krischok, S.; Himmerlich, Marcel:
Anisotropic optical constants, birefringence, and dichroism of wurtzite GaN between 0.6 eV and 6 eV
In: Journal of applied physics, Vol.122 (2017), No.4, Art. 045706, 14 pp.
Zeitschriftenaufsatz
2017Ture, Erdin; Musser, Markus; Hülsmann, Axel; Quay, Rüdiger; Ambacher, Oliver:
Demonstration of an RF front-end based on GaN HEMT technology
(Conference "Sensors, and Command, Control, Communications, and Intelligence (C3I) Technologies for Homeland Security, Defense, and Law Enforcement Applications" <16, 2017, Anaheim/Calif.>)
In: Carapezza, E.M. (Ed.): Sensors, and Command, Control, Communications, and Intelligence (C3I) Technologies for Homeland Security, Defense, and Law Enforcement Applications XVI: Anaheim, California, United States, April 9, 2017. Bellingham, WA: SPIE, 2017. (Proceedings of SPIE 10184), Paper 10184, 7 pp.
Konferenzbeitrag
2017Reiner, Richard; Ambacher, Oliver (Referent); Kallfass, Ingmar (Referent); Quay, Rüdiger (Betreuer) :
Design and characterization of highly-efficient GaN-HEMTs for power applications
Freiburg/Brsg., Univ., Diss., 2016
Dissertation
2017Weiß, Markus; Friesicke, Christian; Metzger, Thomas; Schmidhammer, Edgar; Quay, Rüdiger; Ambacher, Oliver:
Design, realization, and evaluation of a Riemann pump in GaN technology
In: IEEE microwave and wireless components letters, Vol.27 (2017), No.7, pp.672-674
Zeitschriftenaufsatz
2017Harati, Parisa; Rosello, Enoc; Dan, Iulia; Bammidi, E.R.; Eisenbeis, Jörg; Tessmann, Axel; Schwantuschke, Dirk; Henneberger, Ralf; Kallfass, Ingmar:
E-band downlink wireless data transmission for future satellite communication
(Topical Workshop on Internet of Space (TWIoS) <2017, Phoenix/Ariz.>)
In: Jackson, C.: Topical Workshop on Internet of Space 2017: 15-18 January 2017, Phoenix, Arizona, USA; TWIoS proceedings. Piscataway, NJ: IEEE, 2017, pp. 28-31
Konferenzbeitrag
2017Mönch, Stefan; Reiner, Richard; Weiss, Beatrix; Waltereit, Patrick; Quay, Rüdiger; Ambacher, Oliver; Kallfass, Ingmar:
Effect of substrate termination on switching loss and switching time using 600 V GaN-on-Si HEMTs with integrated gate driver in half-bridges
(Workshop on Wide Bandgap Power Devices and Applications (WiPDA) <5, 2017, Albuquerque/NM>)
In: Kaplar, B.: WiPDA 2017, 5th Annual IEEE Workshop on Wide Bandgap Power Devices & Applications: Albuquerque, NM, October 30-November 1, 2017. Piscataway, NJ: IEEE, 2017, pp. 257-264
Konferenzbeitrag
2017Schwantuschke, Dirk; Brueckner, Peter; Wagner, Sandrine; Dammann, Michael; Mikulla, Michael; Quay, Rüdiger:
Enhanced GaN HEMT technology for E-band power amplifier MMICs with 1W output power
(Asia Pacific Microwave Conference (APMC) <2017, Kuala Lumpur>)
In: Pasya, I.: IEEE Asia Pacific Microwave Conference, APMC 2017: November 13-16, 2017, Renaissance Kuala Lumpur Hotel; Proceedings. Piscataway, NJ: IEEE, 2017, pp. 395-398
Konferenzbeitrag
2017Ture, Erdin; Brueckner, Peter; Alsharef, Mohamed; Granzner, Ralf; Schwierz, Frank; Quay, Rüdiger; Ambacher, Oliver:
First demonstration of w-band tri-gate GaN-HEMT power amplifier MMIC with 30 dBm output power
(International Microwave Symposium (IMS) <2017, Honolulu/Hawaii>)
In: Shiroma, W. (Ed.): IEEE MTT-S International Microwave Symposium, IMS 2017: 06-08 Juni 2017, Honolulu, Hawaii. Piscataway, NJ: IEEE, 2017, pp. 35-37
Konferenzbeitrag
2017Ture, Erdin; Ambacher, Oliver (Referent); Bolognesi, Colombo R. (Referent); Palacios, Tomas (Referent) :
GaN-based Tri-gate high electron mobility transistors
Freiburg/Brsg., Univ., Diss., 2017
Dissertation
2017Quay, Rüdiger; Brueckner, Peter; Tessmann, Axel; Ture, Erdin; Schwantuschke, Dirk; Dammann, Michael; Waltereit, Patrick:
Hetero-integrated GaN MMICs: Hot Islands in a (Silicon) Ocean...
(International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMiC) <2017, Graz>)
In: Plank, Thomas (Ed.): INMMiC 2017, International Workshop on Integrated Nonlinear Microwave and Millimetre-wave Circuits. Proceedings: Graz, Austria, April 20-21, 2017. Piscataway, NJ: IEEE, 2017, 3 pp.
Konferenzbeitrag
2017Reiner, Richard; Waltereit, Patrick; Weiss, Beatrix; Quay, Rüdiger; Ambacher, Oliver:
Investigation of GaN-HEMTs in reverse conduction
(International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management <2014, Nuremberg>)
In: MESAGO PCIM GmbH, Stuttgart: PCIM Europe 2017, International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management. Proceedings: Nuremberg, 16 - 18 May 2017 . Berlin: VDE Verlag, 2017, pp. 533-540
Konferenzbeitrag
2017Gashi, Bersant; Ambacher, Oliver (Referent); Quay, Rüdiger (Referent); Krause, Sebastian (Betreuer) :
Investigations of efficient active antenna power amplifier modules for 5G applications under beam control mismatch
Freiburg/Brsg., Univ., Master Thesis, 2017
Master Thesis
2017Reiner, Richard; Waltereit, Patrick; Weiss, Beatrix; Mönch, Stefan; Quay, Rüdiger; Ambacher, Oliver:
Monolithically integrated GaN-on-Si power circuits
(International Conference on Solid State Devices and Materials (SSDM) <49, 2017, Sendai>)
In: Japan Society of Applied Physics -JSAP-: International Conference on Solid State Devices and Materials, SSDM 2017: September 19-22, 2017, Sendai, Japan. Tokyo: JSAP, 2017, pp. 643-644
Konferenzbeitrag
2017Kallfass, Ingmar; Antes, Jochen; Tessmann, Axel; Zwick, Thomas; Henneberger, Ralf:
Multi-gigabit high-range fixed wireless links at high millimeterwave carrier frequencies
(Radio and Wireless Symposium (RWS) <2017, Phoenix/Ariz.>)
In: Muldavin, J.: IEEE Radio and Wireless Symposium 2017: 15-18 January 2017, Phoenix, Arizona, USA, RWS proceedings. Piscataway, NJ: IEEE, 2017, pp. 45-48
Konferenzbeitrag
2017Huber, Thomas; Quay, Rüdiger; Bösch, Wolfgang:
New concept to control the gain of GaN-cascodes in broadband power amplifiers
(European Microwave Integrated Circuits Conference (EuMIC) <12, 2017, Nuremberg>)
In: Institute of Electrical and Electronics Engineers -IEEE-: 12th European Microwave Integrated Circuits Conference, EuMIC 2017: 9-12 October 2017, Nuremberg, Germany. Piscataway, NJ: IEEE, 2017, pp. 184-187
Konferenzbeitrag
2017Huber, Thomas; Quay, Rüdiger; Bösch, Wolfgang:
Noise degradation of cascodes in broadband power amplifiers
(International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMiC) <2017, Graz>)
In: Plank, Thomas (Ed.): INMMiC 2017, International Workshop on Integrated Nonlinear Microwave and Millimetre-wave Circuits. Proceedings: Graz, Austria, April 20-21, 2017. Piscataway, NJ: IEEE, 2017, 3 pp.
Konferenzbeitrag
2017Weiss, Beatrix; Reiner, Richard; Waltereit, Patrick; Quay, Rüdiger; Ambacher, Oliver:
Operation of PCB-embedded, high-voltage multilevel-converter GaN-IC
(Workshop on Wide Bandgap Power Devices and Applications (WiPDA) <5, 2017, Albuquerque/NM>)
In: Kaplar, B.: WiPDA 2017, 5th Annual IEEE Workshop on Wide Bandgap Power Devices & Applications: Albuquerque, NM, October 30-November 1, 2017. Piscataway, NJ: IEEE, 2017, pp. 398-402
Konferenzbeitrag
2017Quay, Rüdiger; Brueckner, Peter; Reiner, Richard; Schwantuschke, Dirk; Waltereit, Patrick:
Radiation aspects and performance of GaN power converters and RFICs for airborne and space applications
(International Microwave Symposium (IMS) <2017, Honolulu/Hawaii>)
In: Shiroma, W. (Ed.): IEEE MTT-S International Microwave Symposium, IMS 2017: 06-08 Juni 2017, Honolulu, Hawaii. Piscataway, NJ: IEEE, 2017, pp. 1826-1829
Konferenzbeitrag
2017Dammann, Michael; Baeumler, Martina; Polyakov, Vladimir M.; Brueckner, Peter; Konstanzer, Helmer; Quay, Rüdiger; Mikulla, Michael; Graff, Andreas; Simon-Najasek, M.:
Reliability of 100 nm AlGaN/GaN HEMTs for mm-wave applications
In: Microelectronics reliability, Vol.76-77 (2017), pp.292-297
Zeitschriftenaufsatz
2017Wespel, Matthias; Wagner, Joachim; Lausen, G.; Ambacher, O.; Schwierz, F. :
The role of charge trapping in AlGaN/GaN-on-Si HEMT based power switches
Stuttgart: Fraunhofer Verlag, 2017
(Science for systems 32)
Zugl.: Freiburg, Univ., Diss., 2016
ISBN 978-3-8396-1198-2
Dissertation
2017Neininger, Philipp; Friesicke, Christian; Krause, Sebastian; Meder, Dirk; Lozar, Roger; Merkle, Thomas; Quay, Rüdiger; Zwick, Thomas:
A sequential power amplifier at 3.5 GHz for 5G applications
(European Microwave Conference (EuMC) <47, 2017, Nuremberg>)
In: Institute of Electrical and Electronics Engineers -IEEE-: 47th European Microwave Conference, EuMC 2017: European Microwave Week 2017, 10-12 October 2017, Nuremberg, Germany. Piscataway, NJ: IEEE, 2017, pp. 284-287
Konferenzbeitrag
2017Weiss, Beatrix; Reiner, Richard; Polyakov, Vladimir M.; Waltereit, Patrick; Quay, Rüdiger; Ambacher, Oliver; Maksimovic, Dragan:
Substrate biasing effects in a high-voltage, monolithically-integrated half-bridge GaN-chip
(Workshop on Wide Bandgap Power Devices and Applications (WiPDA) <5, 2017, Albuquerque/NM>)
In: Kaplar, B.: WiPDA 2017, 5th Annual IEEE Workshop on Wide Bandgap Power Devices & Applications: Albuquerque, NM, October 30-November 1, 2017. Piscataway, NJ: IEEE, 2017, pp. 265-271
Konferenzbeitrag
2017Mocanu, Manuela; Unger, Christian; Pfost, Martin; Waltereit, Patrick; Reiner, Richard:
Thermal stability and failure mechanism of schottky gate AlGaN/GaN HEMTs
In: IEEE transactions on electron devices, Vol.64 (2017), No.3, pp.848-855
Zeitschriftenaufsatz
2017Gerrer, Thomas; Cimalla, Volker; Waltereit, Patrick; Müller, Stefan; Benkhelifa, Fouad; Maier, Thomas; Czap, Heiko; Nebel, Christoph E.; Quay, Rüdiger:
Transfer of AlGaN/GaN RF-devices onto diamond substrates via van der Waals bonding
(European Microwave Integrated Circuits Conference (EuMIC) <12, 2017, Nuremberg>)
In: Institute of Electrical and Electronics Engineers -IEEE-: 12th European Microwave Integrated Circuits Conference, EuMIC 2017: 9-12 October 2017, Nuremberg, Germany. Piscataway, NJ: IEEE, 2017, pp. 25-28
Konferenzbeitrag
Diese Publikationsliste wurde aus der Publikationsdatenbank Fraunhofer-Publica erstellt.