To reinforce the position of Europe’s semiconductor and electronics industry within global competition, eleven institutes within the Fraunhofer Group for Microelectronics have, together with two institutes within the Leibniz community, come up with a concept for a cross-location research factory for microelectronics and nanoelectronics.
Fraunhofer IAF is a worldwide leader in III-V semiconductor research. We offer advice and support for the development of electronic and optoelectronic devices, components, and materials based on semiconductors. Our technologies are deployed in applications fields such as security, energy, communication, health, and mobility.
Millimeter-wave radar system for harsh environments
Due to the harsh environmental conditions in production and manufacturing sensors have to be extremely resistant to thermal radiation, dust, smoke, and steam. Fraunhofer IAF has developed a high-performance millimeter-wave radar system for harsh environments operating at W-band (75 – 110 GHz).
GaN-based circuits reduce losses in power conversion
A more sustainable use of precious energy sources requires advanced approaches to reduce losses in power conversion. Power electronics based on gallium nitride (GaN) is the technology that helps use energy more efficiently. Fraunhofer IAF develops highly efficient power transistors and circuits.
Quantum cascade lasers (QCLs) combine a broad spectral tuning range of more than hundreds of wavenumbers with high spectral brightness. The infrared application laboratory at Fraunhofer IAF aims to bridge the gap between laser source and measurement system development at Fraunhofer IAF and customers.