Fraunhofer Institute for Applied Solid State Physics IAFGreat honor for three Fraunhofer IAF researchers: Dr. Lutz Kirste, Dr. Stefano Leone, and Isabel Streicher were invited to give a lecture at the CIRFE Symposium of the research group of Nobel laureate Prof. Dr. Hiroshi Amano at Nagoya University on November 10.
Nobel laureate Hiroshi Amano invites researchers of Fraunhofer IAF
Lecture on nitride semiconductors at Nagoya University
The presentation entitled "Growth and structural characterization of nitride semiconductors at Fraunhofer IAF" focused on the research work of Leone and Streicher on the growth of the innovative materials (Al,Sc)N and (Al,Y)N for transistors with high electron mobility (HEMT). These are particularly suitable for millimeter-wave applications in extremely high frequency ranges (30-300 GHz) to enable communication links with data rates of up to 10 Gbit/s. Furthermore, Kirste presented his latest results on the structural characterization of substrates made of GaN (gallium nitride), one of the most important compound semiconductors for high-performance and resistant components in high-frequency electronics and power electronics.
Dr. Lutz Kirste (l.), Head of Structural Analysis at Fraunhofer IAF, with Prof. Dr. Hiroshi Amano (r.) at Nagoya University
Fraunhofer IAF researchers Isabel Streicher and Dr. Stefano Leone with Nobel laureate Prof. Dr. Hiroshi Amano (from left to right) at Nagoya University
Prof. Dr. Hiroshi Amano invited Dr. Stefano Leone, Dr. Lutz Kirste, and Isabel Streicher to give a lecture at the CIRFE Symposium at Nagoya University.
The visit to Nagoya University took place in the run-up to the 14th International Conference on Nitride Semiconductors (ICNS-14) in Fukuoka. In addition to Dr. Lutz Kirste, Dr. Stefano Leone and Isabel Streicher, Dr. Rachid Driad, Akash Nair, Matthias Sinnwell, and Patrik Straňák will participate and represent Fraunhofer IAF with lectures and poster presentations.
Prof. Dr. Hiroshi Amano was awarded the Nobel Prize in Physics in 2014 for the invention of the blue light-emitting diode (LED) based on GaN, which he achieved together with Isamu Akasaki in 1989. Today, he is Director of the Center for Integrated Research of Future Electronics (CIRFE), a research center of the Institute of Materials and Systems Sustainability (IMaSS) at Nagoya University.