Publications of the business unit Power Electronics

2019

Jahr
Year
Titel/Autor:in
Title/Author
Publikationstyp
Publication Type
2019 190-GHz G-band GaN amplifier MMICs with 40 GHz of bandwidth
Cwiklinski, Maciej; Brueckner, Peter; Leone, Stefano; Friesicke, Christian; Lozar, Roger; Massler, Hermann; Quay, Rüdiger; Ambacher, Oliver
Konferenzbeitrag
Conference Paper
2019 3 GHz RF measurements of AlGaN/GaN transistors transferred from silicon substrates onto single crystalline diamond
Gerrer, Thomas; Czap, Heiko; Maier, Thomas; Benkhelifa, Fouad; Müller, Stefan; Nebel, Christoph E.; Waltereit, Patrick; Quay, Rüdiger; Cimalla, Volker
Zeitschriftenaufsatz
Journal Article
2019 A computationally efficient modelling methodology for field-plates in GaN HEMTs
Hodges, Jason; Albahrani, Sayed Ali; Khandelwal, Sourabh
Konferenzbeitrag
Conference Paper
2019 A GaN-on-Si-based logic, driver and DC-DC converter circuit with closed-loop peak current-mode control
Basler, Michael; Mönch, Stefan; Reiner, Richard; Waltereit, Patrick; Quay, Rüdiger; Kallfass, Ingmar; Ambacher, Oliver
Konferenzbeitrag
Conference Paper
2019 A pseudo-complementary GaN-based gate driver with Reduced Static Losses
Basler, Michael; Mönch, Stefan; Reiner, Richard; Waltereit, Patrick; Quay, Rüdiger; Kallfass, Ingmar; Ambacher, Oliver
Konferenzbeitrag
Conference Paper
2019 AlGaN/GaN high electron-mobility varactors on silicon substrate
Amirpour, Raul; Schwantuschke, Dirk; Brueckner, Peter; Quay, Rüdiger; Ambacher, Oliver
Konferenzbeitrag
Conference Paper
2019 Asymmetrical substrate-biasing effects at up to 350V operation of symmetrical monolithic normally-off GaN-on-Si half-bridges
Mönch, Stefan; Reiner, Richard; Waltereit, Patrick; Meder, Dirk; Basler, Michael; Quay, Rüdiger; Ambacher, Oliver; Kallfass, Ingmar
Konferenzbeitrag
Conference Paper
2019 Comparison of MOCVD and MBE regrowth for CAVET fabrication
Kotzea, Simon; Witte, Wiebke; Godejohann, Birte-Julia; Marx, Mathias; Heuken, Michael; Kalisch, Holger; Aidam, Rolf; Vescan, Andrei
Zeitschriftenaufsatz
Journal Article
2019 Consistent modelling of I-V and C-V behaviour of GaN HEMTs in presence of trapping
Hodges, Jason; Schwantuschke, Dirk; Raay, Friedbert van; Brueckner, Peter; Quay, Rüdiger; Khandelwal, Sourabh
Konferenzbeitrag
Conference Paper
2019 D-band and G-band high-performance GaN power amplifier MMICs
Cwiklinski, Maciej; Brueckner, Peter; Leone, Stefano; Friesicke, Christian; Massler, Hermann; Lozar, Roger; Wagner, Sandrine; Quay, Rüdiger; Ambacher, Oliver
Zeitschriftenaufsatz
Journal Article
2019 Darstellung und Simulation von AlN/GaN-Übergitterstrukturen für elektronische Bauelemente
Manz, Christian
Dissertation
Doctoral Thesis
2019 Design, analysis and evaluation of a broadband high-power amplifier for Ka-band frequencies
Neininger, Philipp; John, Laurenz; Brueckner, Peter; Friesicke, Christian; Quay, Rüdiger; Zwick, Thomas
Konferenzbeitrag
Conference Paper
2019 Epitaxial growth optimization of AlGaN/GaN high electron mobility transistor structures on 3C-SiC/Si
Leone, Stefano; Benkhelifa, Fouad; Kirste, Lutz; Manz, Christian; Quay, Rüdiger; Ambacher, Oliver
Zeitschriftenaufsatz
Journal Article
2019 Experimental determination of Al1-xScxN thin film thermo-electro-acoustic properties up to 140°C by using SAW resonators
Ding, Anli; Kurz, Nicolas; Driad, Rachid; Lu, Yuan; Lozar, Roger; Christoph, Tim; Kirste, Lutz; Ambacher, Oliver; Zukauskaite, Agne
Konferenzbeitrag
Conference Paper
2019 Experimental determination of the electro-acoustic properties of thin film AlScN using surface acoustic wave resonators
Kurz, N.; Ding, Anli; Urban, F.D.; Lu, Yuan; Kirste, Lutz; Feil, N.M.; Zukauskaite, Agne; Ambacher, Oliver
Zeitschriftenaufsatz
Journal Article
2019 Finite element analysis of SAW propagation characteristics in c-plane (0001) and a-plane (11-20) ALScN thin films
Feil, Niclas M.; Kurz, Nicolas; Urban, Daniel F.; Altayara, Abdullah; Bjoern, Christian; Ding, Anli; Zukauskaite, Agne; Ambacher, Oliver
Konferenzbeitrag
Conference Paper
2019 High-power (>2 W) E-band PA MMIC based on high efficiency GaN-HEMTs with optimized buffer
Ture, Erdin; Leone, Stefano; Brueckner, Peter; Quay, Rüdiger; Ambacher, Oliver
Konferenzbeitrag
Conference Paper
2019 High-power-density AlGaN/GaN technology for 100-V operation at L-band frequencies
Krause, Sebastian; Brueckner, Peter; Dammann, Michael; Quay, Rüdiger
Konferenzbeitrag
Conference Paper
2019 High-Q anti-series AlGaN/GaN high electron-mobility varactor
Amirpour, Raul; Schwantuschke, Dirk; Brueckner, Peter; Quay, Rüdiger; Ambacher, Oliver
Konferenzbeitrag
Conference Paper
2019 Integrated 2-b riemann pump RF-DAC in GaN technology for 5G base stations
Weiß, Markus; Friesicke, Christian; Quay, Rüdiger; Ambacher, Oliver
Konferenzbeitrag
Conference Paper
2019 Integrated current sensing in GaN power ICs
Mönch, Stefan; Reiner, Richard; Waltereit, Patrick; Quay, Rüdiger; Ambacher, Oliver; Kallfass, Ingmar
Konferenzbeitrag
Conference Paper
2019 Investigation of growth parameters for ScAlN-barrier HEMT structures by plasma-assisted MBE
Frei, Kathrin; Trejo-Hernández, Raúl; Schütt, Sebastian; Kirste, Lutz; Prescher, Mario; Aidam, Rolf; Müller, Stefan; Waltereit, Patrick; Ambacher, Oliver; Fiederle, Michael
Zeitschriftenaufsatz
Journal Article
2019 Large-signal modeling of a scalable high-Q AlGaN/GaN high electron-mobility varactor
Amirpour, Raul; Schwantuschke, Dirk; Raay, Friedbert van; Brueckner, Peter; Quay, Rüdiger; Ambacher, Oliver
Zeitschriftenaufsatz
Journal Article
2019 MBE of III-Nitride Semiconductors for Electronic Devices
Aidam, Rolf; Ambacher, Oliver; Diwo, Elke; Godejohann, Birte-Julia; Kirste, Lutz; Lim, T.; Quay, Rüdiger; Waltereit, Patrick
Aufsatz in Buch
Book Article
2019 Millimeter-wave single-pole double-throw switches based on a 100-nm gate-length AlGaN/GaN-HEMT technology
Thome, Fabian; Brueckner, Peter; Quay, Rüdiger; Ambacher, Oliver
Konferenzbeitrag
Conference Paper
2019 Modeling of the impact of the substrate voltage on the capacitances of GaN-on-Si HEMTs
Albahrani, Sayed Ali; Mahajan, Dhawal; Mönch, Stefan; Reiner, Richard; Waltereit, Patrick; Schwantuschke, Dirk; Khandelwal, Sourabh
Zeitschriftenaufsatz
Journal Article
2019 Modeling the impact of the high-field region on the C-V characteristics in GaN HEMTs
Hodges, Jason; Albahrani, Sayed Ali; Schwantuschke, Dirk; Raay, Friedbert van; Brueckner, Peter; Khandelwal, Sourabh
Zeitschriftenaufsatz
Journal Article
Diese Liste ist ein Auszug aus der Publikationsplattform Fraunhofer-Publica

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