Matrix and single detectors of highest performance:
- InAs/GaSb type II superlattices for the mid- (MWIR, 3 – 5 µm) and long-wave infrared (LWIR, 8 – 12 µm)
- InGaAs for the short-wave infrared (SWIR, < 1.7 µm)
- AlGaN for the solar blind ultraviolet regime (< 280 nm)
Devices using heterojunctions are being developed in order to improve the performance. These have significant advantages over commonly used homojunction devices, particularly in the field of dark current and noise behavior.
We develop highly sensitive avalanche photodiodes (APDs) with integrated signal amplification for applications that require the detection of very weak optical signals.
We do this for the solar-blind ultraviolet spectrum below 280 nn as well as for the short-wave infrared (SWIR, 0,9 – 1,7 µm), for which we optimize AlGaN and InGaAs APDs.