Research Fab Microelectronics Germany (FMD)

Vision and Mission of the Research Fab Microelectronics Germany

The FMD is a global innovation driver and the largest cross-site R&D cooperation for micro and nanoelectronics in Europe. It offers a unique range of competences and infrastructures.

Joint Technology Pool

FMD builds bridges from basic research up to customer-specific developments

  • 13 Institutes
    Eleven Institutes within the Fraunhofer Group for Microelectronics, together with the Leibniz-Institute für Höchstfrequenztechnik and the Leibniz Institute for Innovations for High Performance Microelectronics, form FMD, with the aim of internationally strengthening the competitiveness of the European semiconductor and electronics industry. Since April 6, 2017, this new form of cooperation operates as the »Research Fab Microelectronics Germany«.

  • 2000 Scientists 
    The concept for the research fab was designed jointly by Fraunhofer and Leibniz to combine their competences in a pool for technologies, to modernize and extend their equipment and to adjust important laboratory routines for microelectronics and technological developments.

  • 4 Technology Parks
    The Research Fab Microelectronics Germany is organized into four technology parks in order to advance the research topics relevant to the future as efficiently and promptly as possible.
FMD joint booth at Hannover Fair 2018
© Fraunhofer VµE / Theresa Leberle
FMD joint booth at Hannover Fair 2018
Filming at Fraunhofer IAF – New machines are being put into operation in the wake of FMD founding
© Fraunhofer IAF
Filming at Fraunhofer IAF – New machines are being put into operation in the wake of FMD founding
FMD kick-off event 2017 – The launch of a big endeavor
© Fraunhofer IAF
FMD kick-off event 2017 – The launch of a big endeavor

Fraunhofer IAF Strong within the Technology Park »Compound Semiconductors«


Fraunhofer IAF is in charge as expert in the field of compound semiconductors and special substrates. Devices and circuits for frequencies up to 670 GHz, power transistors based on wide bandgap semiconductors as well as optoelectronic devices – all these innovations are made possible by the unique properties of compound semiconductors.

Apart from silicon carbide (SiC) and gallium nitride on silicon (Gan-on-Si), compound semiconductors are not yet compatible with silicon-based technologies when it comes to wafer diameter and process control. One important role of the technology park »Compound Semiconductors and Special Substrates« will therefore be the provision of III-V wafers and chips for heterointegration with silicon electronics. This will allow the potential offered by devices and circuits based on compound semiconductors to be made usable for customers.

Furthermore, this technology park is positioned to be able to provide further development of special substrates such as SiC and aluminum nitride (AlN) for the next generation of power devices. New developments such as power electronics based on the semiconductor gallium oxide (GaO) or diamond can also be addressed within this area.

At Fraunhofer IAF, 16 million euros are currently being invested in new equipment for epitaxy, processing, packaging and measurement technology, to establish and further expand the required competences.

Further Information


FMD-Space for start-ups and founders

The »FMD-Space« offers Start-ups with an innovative product idea and a resulting microelectronic question access to the R&D infrastructure and technological know-how of the Fraunhofer Group for Microelectronics and the two involved Leibniz Institutes FBH and IHP. The aim of the cooperation will be the joint development of demonstrators and prototypes as well as a coherent business model.