Research Fab Microelectronics Germany (FMD)

Fraunhofer IAF Strong within the Technology Park »Compound Semiconductors«

Fraunhofer IAF is in charge as expert in the field of compound semiconductors and special substrates. Devices and circuits for frequencies up to 670 GHz, power transistors based on wide bandgap semiconductors as well as optoelectronic devices – all these innovations are made possible by the unique properties of compound semiconductors.

Apart from silicon carbide (SiC) and gallium nitride on silicon (Gan-on-Si), compound semiconductors are not yet compatible with silicon-based technologies when it comes to wafer diameter and process control. One important role of the technology park »Compound Semiconductors and Special Substrates« will therefore be the provision of III-V wafers and chips for heterointegration with silicon electronics. This will allow the potential offered by devices and circuits based on compound semiconductors to be made usable for customers.

Furthermore, this technology park is positioned to be able to provide further development of special substrates such as SiC and aluminum nitride (AlN) for the next generation of power devices. New developments such as power electronics based on the semiconductor gallium oxide (GaO) or diamond can also be addressed within this area.

At Fraunhofer IAF, 16 million euros are currently being invested in new equipment for epitaxy, processing, packaging and measurement technology, to establish and further expand the required competences.