Fraunhofer Institute for Applied Solid State Physics IAFVision and Mission of the Research Fab Microelectronics Germany
The FMD is a global innovation driver and the largest cross-site R&D cooperation for micro and nanoelectronics in Europe. It offers a unique range of competences and infrastructures.
Research Fab Microelectronics Germany (FMD)
Joint Technology Pool
FMD builds bridges from basic research up to customer-specific developments
- 13 Institutes
Eleven Institutes within the Fraunhofer Group for Microelectronics, together with the Leibniz-Institute für Höchstfrequenztechnik and the Leibniz Institute for Innovations for High Performance Microelectronics, form FMD, with the aim of internationally strengthening the competitiveness of the European semiconductor and electronics industry. Since April 6, 2017, this new form of cooperation operates as the »Research Fab Microelectronics Germany«.
- 2000 Scientists
The concept for the research fab was designed jointly by Fraunhofer and Leibniz to combine their competences in a pool for technologies, to modernize and extend their equipment and to adjust important laboratory routines for microelectronics and technological developments.
- 4 Technology Parks
The Research Fab Microelectronics Germany is organized into four technology parks in order to advance the research topics relevant to the future as efficiently and promptly as possible.
FMD joint booth at Hannover Fair 2018
Filming at Fraunhofer IAF – New machines are being put into operation in the wake of FMD founding
FMD kick-off event 2017 – The launch of a big endeavor
Fraunhofer IAF Strong within the Technology Park »Compound Semiconductors«
Fraunhofer IAF is in charge as expert in the field of compound semiconductors and special substrates. Devices and circuits for frequencies up to 670 GHz, power transistors based on wide bandgap semiconductors as well as optoelectronic devices – all these innovations are made possible by the unique properties of compound semiconductors.
Apart from silicon carbide (SiC) and gallium nitride on silicon (Gan-on-Si), compound semiconductors are not yet compatible with silicon-based technologies when it comes to wafer diameter and process control. One important role of the technology park »Compound Semiconductors and Special Substrates« will therefore be the provision of III-V wafers and chips for heterointegration with silicon electronics. This will allow the potential offered by devices and circuits based on compound semiconductors to be made usable for customers.
Furthermore, this technology park is positioned to be able to provide further development of special substrates such as SiC and aluminum nitride (AlN) for the next generation of power devices. New developments such as power electronics based on the semiconductor gallium oxide (GaO) or diamond can also be addressed within this area.
At Fraunhofer IAF, 16 million euros are currently being invested in new equipment for epitaxy, processing, packaging and measurement technology, to establish and further expand the required competences.