Fraunhofer Institute for Applied Solid State Physics IAFTerms of use
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Photos
Research
With the development of monolithically integrated GaN-power components for extremely compact voltage converters, Fraunhofer IAF and its project partners will facilitate increased performances and ranges in eMobility.
The power amplifier of the Fraunhofer IAF transmits at a frequency of 5.8 gigahertz. These frequency is needed for the new 5G mobile radio standard. The centrally placed gallium nitride (GaN) semi-conductor circuits are the central part of the packaged power amplifier.
In specially designed reactors, Fraunhofer IAF produces diamond.
Scientists will soon be tracking the course of chemical reactions in real time. A quantum cascade laser, which records 1,000 spectra/second, makes it possible.
The special ellipsoid shape of the plasma reactor facilitates the deposition of diamond on a large surface.
The new CVD-reactor »Black Magic« for the deposition of graphene at Fraunhofer IAF. In future, a cost-efficient and simplified technology will make the deposition and the transfer of graphene onto aluminum-nitride-based bandpass filters possible.
View into the process chamber of the reactor, where graphene is grown on a catalyst surface which reaches up to 1000 °C.
The quantum cascade laser developed at Fraunhofer IAF detects even faint traces of dangerous materials from a distance.
A high-purity single-crystal diamond made at Fraunhofer IAF.
The radar module is no larger than a pack of cigarettes.
Thanks to a cost-effective mounting and interconnection technology as welll as specially developed circuit boards, the high-frequency module has been integrated onto a board measuring just 78 x 42 x 28 millimeters.
The power amplifier of the Fraunhofer IAF transmits at a frequency of 5.8 gigahertz. These frequency is needed for the new 5G mobile radio standard. The centrally placed gallium nitride (GaN) semi-conductor circuits are the central part of the packaged power amplifier.
Scanning electron microscope image of a diamond tip.
The radar module from Fraunhofer IAF is based on indium gallium arsenide semiconductor technology. It is extremely light and compact thanks to its monolithically integrated construction, in which different components and functions are integrated into a single chip.
Amplifier module: The low-noise, high-sensitivity microwave amplifiers of the Fraunhofer IAF can already detect signals of only a few nanowatts. They are based on the semiconductor material indium-gallium-arsenide.
Fraunhofer IAF’s monolithically integrated half-bridge circuit.
GaN-on-Si, Halbbrückenmodul, Halbbrücke, GaN, Spannungswandler, Konverter
Events
Die »Speaker’s Corner« bot Raum zum Austausch mit den Vortragenden.
Johannes Koeth, Geschäftsführer der nanoplus GmbH, erläuterte die Möglichkeiten der Gasanalyse mittels Laser.
Christian Zech vom Fraunhofer IAF zeigte die vielfältigen Anwendungen der Radartechnologie in der Prozesssteuerung.
Keynote speaker Martina Link of the Federal Criminal Police Office (BKA) reporting on the security challenges posed by encryption and the increased potential of the misuse of drones as »toys for everyone«.
Holger Meinel (ex-manager at Daimler) on the necessary close interconnectedness of high frequency and IT specialists in the processing of the huge amount of sensor data for autonomous driving.
Economy Minister Dr. Hoffmeister-Kraut looking inside the diamond reactor of the Fraunhofer IAF.
Economy Minister Dr. Hoffmeister-Kraut during the real-time identification of drugs, sweeteners, and vitamins via infrared laser spectroscopy at the Fraunhofer IAF.
Economy Minister Dr. Hoffmeister-Kraut in the LED lab of the Sustainability Center at the Fraunhofer IAF.
