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With increasing data rates in mobile communications, the need for more powerful high-frequency electronics is growing. This is particularly true for satellite-based global communication networks, which must function reliably and securely in all weather conditions and at any location. In the ESA Magellan project, researchers at Fraunhofer IAF, together with UMS and TESAT, are therefore developing novel efficient GaN transistors and high-power amplifiers for LEO and GEO communication satellites with high throughput by 2027.
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