Integrated circuits and modules up to 850 GHz
Fraunhofer IAFdevelops world-class high-frequency modules and integrated circuits. We offer amplifiers with extremely low noise, high gain and low power consumption. Metamorphic HEMT amplifiers set new standards: We work on devices with a noise figure of 4.8 dB at 243 GHz and on amplifiers with an operating frequency of up to 600 GHz.
In addition, Fraunhofer IAF can build functional MMICs such as single-chip radar and transceiver circuits. For use in radar systems, wireless applications and data links, GaN-HEMTs and ICs are used in power amplifiers for frequencies between 1 GHz and 100 GHz. We develop GaN packaged transistors for use in radar and mobile communications applications, with efficiency rates of more than 80 percent, for frequencies up to 3 GHz and with a typical output power of 100 W.
Our devices can be used in a variety of applications:
- Active and passive imaging systems
- Phased array radar
- Millimeter-wave sensors
- Wireless communication
- Space and earth observation
- Broadband and space communications