Modules and integrated circuits

Integrated circuits and modules up to 850 GHz
 

Fraunhofer IAFdevelops world-class high-frequency modules and integrated circuits. We offer amplifiers with extremely low noise, high gain and low power consumption. Metamorphic HEMT amplifiers set new standards: We work on devices with a noise figure of 4.8 dB at 243 GHz and on amplifiers with an operating frequency of up to 600 GHz.

In addition, Fraunhofer IAF can build functional MMICs such as single-chip radar and transceiver circuits. For use in radar systems, wireless applications and data links, GaN-HEMTs and ICs are used in power amplifiers for frequencies between 1 GHz and 100 GHz. We develop GaN packaged transistors for use in radar and mobile communications applications, with efficiency rates of more than 80 percent, for frequencies up to 3 GHz and with a typical output power of 100 W.

Our devices can be used in a variety of applications:

  • Active and passive imaging systems
  • Phased array radar
  • Millimeter-wave sensors
  • Wireless communication
  • Space and earth observation
  • Broadband and space communications
© Sebastian Krause

Hybrid Integration Metamorph GaN
© Fraunhofer IAF

Hybrid Integration Metamorph GaN

Radio module for use in 5G wireless THz communication. The interdisciplinary project team of TERRANOVA investigates new system architectures for embedding broadband wireless THz connections in optical fiber lines.
© Fraunhofer IAF

Kostengünstige, kompakte elektro-optische Basisbandschnittstellen und Funkmodule sind eine der wichtigsten Herausforderungen von drahtlosen THz-Verbindungen für die nächste Mobilfunkgeneration nach 5G.