Electronic Circuits

We develop

Transistors, monolithic integrated circuits (ICs) and modules for a wide range of applications. We address high frequency and power applications in the field of microwaves and (sub-)millimeter-waves up to 670 GHz, as well as in power electronics for use in power switches and converters up to 100 MHz.

Our components based on GaN and InGaAs are:

  • powerful
  • low-noise
  • linear
  • energy-efficient
  • of small size

The low-noise, high-sensitivity microwave amplifiers of the Fraunhofer IAF can already detect signals of only a few nanowatts. They are based on the semiconductor material indium-gallium-arsenide.
© Fraunhofer IAF
The low-noise, high-sensitivity microwave amplifiers of the Fraunhofer IAF can already detect signals of only a few nanowatts. They are based on the semiconductor material indium-gallium-arsenide.
Radar scanner - module
© Fraunhofer IAF
The radar module from Fraunhofer IAF is extremely light and compact thanks to its monolithically integrated construction, in which different components and functions are integrated into a single chip.

Metamorphic IC technology

Our technology is based on InGaAs mHEMTs and includes gate lengths of: 50 nm / 35 nm / 20 nm.

This makes it possible to develop extremely low-noise and broadband applications at room temperature, but also under cryogenic conditions, with cut-off frequencies of up to 1 THz.

  • Amplifiers:
    are suitable for space applications and offer lowest noise figures at very high amplification.
  • Transceiver ICs:
    enable ultra-fast data transmission up to 300 GHz and above.

High frequency filter

We work with novel piezoelectric materials, such as AlScN, for high frequency RF filter applications in the telecommunications industry.

Milimeter-waves

In the millimeter wave range, we develop subsystems such as compact radar modules with the highest measurement accuracy for demanding applications in materials testing, automation technology and process control.

Single-crystalline diamond wafers (polished and unpolished) for electronics.
Scientists at the IAF are working with partners to develop high-voltage transistors based on the high-performance semiconductor gallium nitride for use in voltage transformers.
In electromobility, as many small and efficient systems as possible have to be installed in a small space. The voltage converter shown in the picture is based on 4 x 3 mm² GaN power ICs with integrated transistors, gate drivers, diodes as well as current and temperature sensors for condition monitoring.
© Fraunhofer IAF
In electromobility, as many small and efficient systems as possible have to be installed in a small space. The voltage converter shown in the picture is based on 4 x 3 mm² GaN power ICs with integrated transistors, gate drivers, diodes as well as current and temperature sensors for condition monitoring.

Microwave Power Amplifier

Using GaN on silicon carbide substrates, our development in this range includes integrated circuits up to over 100 GHz with the following focal points:        

  • Power generation
    in the range 1 - 2 GHz with powers of 1 kW
  • Mobile amplifier
    in the range 0.5 - 6 GHz with powers up to 250 W
  • Amplifier for radio links in the Ka-band
    up to 40 GHz with powers from 5 - 10 W

In the E-band (71 - 84 GHz) various ICs with an output power of around 1 W are available. The higher frequency range at 94 GHz is being investigated for radar applications.

Power switches and converters

We offer R&D services in the field of integrated FET circuits and diodes for modules up to 3 kW per module in the area of power switches and converters in the GaN to silicon substrate material system.

Current research projects

How you can work with us

Information about how to collaborate with Fraunhofer IAF can be found at the following link.

Scientific Publications

Our most recent scientific publications can be found at the following link:

Our offer

General information about the research on »Electronic Circuits« at Fraunhofer IAF can be found at the following link.