Fraunhofer Institute for Applied Solid State Physics IAFResearch and development in electronics
Fraunhofer IAF researchers develop materials, devices, modules, and sub-systems for a wide range of applications in high frequency electronics and power electronics.
In the field of high frequency electronics, Fraunhofer IAF researchers work on metamorphic IC technology based on InGaAs mHEMTs including gate lengths of 50 nm, 35 nm, or 20 nm. This makes it possible to develop extremely low-noise and broadband applications at room temperature, but also under cryogenic conditions, with cut-off frequencies of up to 1 THz.
In power electronics, we focus on GaN-based devices, circuits, and modules for highest energy efficiency and maximum voltage being used in electromobility, air conditioning, and information technology applications. Furthermore, Fraunhofer IAF researchers work on novel lateral and vertical 1200 V devices as well as monolithic and heterogeneous integration.
