Metamorphic IC technology
Our technology is based on InGaAs mHEMTs and includes gate lengths of: 50 nm / 35 nm / 20 nm.
This makes it possible to develop extremely low-noise and broadband applications at room temperature, but also under cryogenic conditions, with cut-off frequencies of up to 1 THz.
are suitable for space applications and offer lowest noise figures at very high amplification.
- Transceiver ICs:
enable ultra-fast data transmission up to 300 GHz and above.
High frequency filter
We work with novel piezoelectric materials, such as AlScN, for high frequency RF filter applications in the telecommunications industry.
In the millimeter wave range, we develop subsystems such as compact radar modules with the highest measurement accuracy for demanding applications in materials testing, automation technology and process control.