Publications of the business unit Power Electronics

2021

Jahr
Year
Titel/Autor:in
Title/Author
Publikationstyp
Publication Type
2021 A 28-90-GHz GaN Power Amplifier MMIC Using an Integrated fT-Doubler Topology
Cwiklinski, Maciej; Brueckner, Peter; Leone, Stefano; Friesicke, Christian; Raay, Friedbert van; Wagner, Sandrine; Quay, Rüdiger
Konferenzbeitrag
2021 A GaN-based active diode circuit for low-loss rectification
Basler, Michael; Reiner, Richard; Mönch, Stefan; Waltereit, Patrick; Quay, Rüdiger; Kallfass, Ingmar; Ambacher, Oliver
Konferenzbeitrag
2021 A three-phase GaN-on-Si inverter IC for low-voltage motor drives
Mönch, Stefan; Reiner, Richard; Benkhelifa, Fouad; Basler, Michael; Waltereit, Patrick; Quay, Rüdiger
Konferenzbeitrag
2021 Atomic scale confirmation of ferroelectric polarization inversion in wurtzite-type AlScN
Wolff, Niklas; Fichter, Simon; Haas, Benedikt; Islam, Md Redwanul; Niekiel, Florian; Kessel, Maximilian; Ambacher, Oliver; Koch, Christoph; Wagner, Bernhard; Lofink, Fabian; Kienle, Lorenz
Zeitschriftenaufsatz
2021 Building Blocks for GaN Power Integration
Basler, Michael; Reiner, Richard; Mönch, Stefan; Benkhelifa, Fouad; Doering, Philipp; Waltereit, Patrick; Quay, Rüdiger; Ambacher, Oliver
Zeitschriftenaufsatz
2021 Characteristics of hetero-integrated GaN-HEMTs on CMOS technology by micro-transfer-printing
Reiner, Richard; Lerner, Ralf; Waltereit, Patrick; Hansen, Nis Hauke; Mönch, Stefan; Fecioru, Alin; Gomez, David
Konferenzbeitrag
2021 Deep-level characterization of GaN-on-GaN current aperture vertical electron transistors
Sinnwell, Matthias; Doering, Philipp; Driad, Rachid; Dammann, Michael; Mikulla, Michael; Quay, Rüdiger
Konferenzbeitrag
2021 Design of low-resistance and area-efficient GaN-HEMTs for low-voltage power applications
Reiner, Richard; Benkhelifa, Fouad; Mönch, Stefan; Basler, Michael; Waltereit, Patrick; Mikulla, Michael; Quay, Rüdiger; Ambacher, Oliver
Konferenzbeitrag
2021 First-principles calculation of electroacoustic properties of wurtzite (Al,Sc)N
Urban, D.F.; Ambacher, Oliver; Elsässer, C.
Zeitschriftenaufsatz
2021 Growth and fabrication of quasivertical current aperture vertical electron transistor structures
Doering, Philipp; Driad, Rachid; Leone, Stefano; Müller, Stefan; Waltereit, Patrick; Kirste, Lutz; Polyakov, Vladimir M.; Mikulla, Michael; Ambacher, Oliver
Zeitschriftenaufsatz
2021 High-power density DC-DC converters using highly-integrated half-bridge GaN ICs
Basler, Michael; Mönch, Stefan; Reiner, Richard; Benkhelifa, Fouad; Quay, Rüdiger; Ambacher, Oliver; Weidinger, Gerald; Weis, Gerald; Kallfass, Ingmar
Konferenzbeitrag
2021 Improved AlScN/GaN heterostructures grown by metal-organic chemical vapor deposition
Manz, Christian; Leone, Stefano; Kirste, Lutz; Ligl, Jana; Frei, Kathrin; Fuchs, Theodor; Prescher, Mario; Waltereit, Patrick; Verheijen, Marcel A.; Graff, Andreas; Simon-Najasek, Michél; Altmann, Frank; Fiederle, Michael; Ambacher, Oliver
Zeitschriftenaufsatz
2021 Investigation of GaN-on-Si and GaN-on-SOI substrate capacitances for discrete and monolithic half-bridges
Mönch, Stefan; Reiner, Richard; Waltereit, Patrick; Quay, Rüdiger; Ambacher, Oliver; Kallfass, Ingmar
Konferenzbeitrag
2021 Limitations and Implementation Strategies of Interstage Matching in a 6-W, 28-38-GHz GaN Power Amplifier MMIC
Neininger, Philipp; John, Laurenz; Thome, Fabian; Friesicke, Christian; Brueckner, Peter; Quay, Rüdiger; Zwick, Thomas
Zeitschriftenaufsatz
2021 Metal organic chemical vapour deposition regrown large area GaN-on-GaN current aperture vertical electron transistors with high current capability
Doering, Philipp; Driad, Rachid; Reiner, Richard; Waltereit, Patrick; Mikulla, Michael
Zeitschriftenaufsatz
2021 Monolithic integrated AlGaN/GaN power converter topologies on high-voltage AlN/GaN superlattice buffer
Mönch, Stefan; Müller, Stefan; Reiner, Richard; Waltereit, Patrick; Czap, Heiko; Basler, Michael; Hückelheim, Jan; Kirste, Lutz; Kallfass, Ingmar; Quay, Rüdiger; Ambacher, Oliver
Zeitschriftenaufsatz
2021 PCB-Embedded GaN-on-Si Half-Bridge and Driver ICs with On-Package Gate and DC-Link Capacitors
Mönch, Stefan; Reiner, Richard; Waltereit, Patrick; Benkhelifa, Fouad; Hückelmheim, Jan; Meder, Dirk; Zink, Martin; Kaden, Thomas; Noll, Stefan; Mansfeld, Sebastian; Mingirulli, Nicola; Quay, Rüdiger; Kallfass, Ingmar
Zeitschriftenaufsatz
2021 Polarization induced interface and electron sheet charges of pseudomorphic ScAlN/GaN, GaAlN/GaN, InAlN/GaN, and InAlN/InN heterostructures
Ambacher, Oliver; Christian, B.; Yassine, Mohammed Fadi; Baeumler, Martina; Leone, Stefano; Quay, Rüdiger
Zeitschriftenaufsatz
2021 Power Combining Solutions for High-Power GaN MMICs at mm-Wave Frequencies
Neininger, Philipp
Dissertation
2021 Properties of higher-order surface acoustic wave modes in Al1-xScxN/sapphire structures
Feil, Niclas M.; Mayer, Elena; Nair, Akash; Christian, Björn; Ding, Anli; Sun, Cheng; Mihalic, Saskia Sirrah; Kessel, Maximilian; Zukauskaite, Agne; Ambacher, Oliver
Zeitschriftenaufsatz
2021 Reliability and failure analysis of 100 nm AlGaN/GaN HEMTs under DC and RF Stress
Dammann, Michael; Baeumler, Martina; Kemmer, Tobias; Konstanzer, Helmer; Brueckner, Peter; Krause, Sebastian; Graff, Andreas; Simon-Najasek, Michél
Konferenzbeitrag
2021 Stability and residual stresses of sputtered wurtzite AlScN thin films
Österlund, Elmeri; Ross, Glenn; Caro, Miguel; Paulasto-Kröckel, Mervi; Hollmann, Andreas; Klaus, Manuela; Meixner, Matthias; Genzel, Christoph; Koppinen, Panu; Pensala, Tuomas; Zukauskaite, Agne; Trebala, Michael
Zeitschriftenaufsatz
2021 Structural Analysis of Low Defect Ammonothermally Grown GaN Wafers by Borrmann Effect X-ray Topography
Kirste, Lutz; Grabianska, Karolina; Kucharski, Robert; Sochacki, Tomasz; Lucznik, Boleslaw; Bockowski, Michael
Zeitschriftenaufsatz
2021 Surface Acoustic Wave Devices based on c-plane and a-plane AlscN
Ding, Anli
Dissertation
2021 Switching Characteristics of Integrated GaN-on-Si Half-Bridge and Driver Circuits
Mönch, Stefan
Dissertation
Diese Liste ist ein Auszug aus der Publikationsplattform Fraunhofer-Publica

This list has been generated from the publication platform Fraunhofer-Publica