Fraunhofer Institute for Applied Solid State Physics IAFDr. Michael Basler from Fraunhofer IAF has won the Best Paper Award at the PCIM Conference 2025 for his paper “Highly-Integrated 1200 V GaN-Based Monolithic Bidirectional Switch”. The award was presented at the opening event of this year’s PCIM on May 6 in Nuremberg.
Michael Basler wins Best Paper Award at PCIM Conference 2025
05/07/2024 / Fraunhofer IAF presents award-winning power electronics
Dr. Michael Basler won the Best Paper Award at the PCIM Conference 2025 for his paper “Highly-Integrated 1200 V GaN-Based Monolithic Bidirectional Switch.”
Monolithic bidirectional 1200 V GaN switches (MBDS) with integrated free-wheeling diodes, manufactured at Fraunhofer IAF in a multi-project wafer run using GaN-on-insulator technology
The Best Paper Award at PCIM recognizes contributions that provide pioneering approaches to improving the efficiency, sustainability and performance of key technologies in the field of power electronic systems and offer practical solutions to current industry challenges. The international advisory board of the conference, headed by Prof. Dr. Leo Lorenz (European Center for Power Electronics e. V., ECPE), selected the winners of the Best Paper Award from more than 450 submissions. In addition to Michael Basler, Hironori Akiyama from Japan and Bastian Korthauer from Switzerland were honored.
Monolithic bidirectional 1200 V GaN switch with integrated free-wheeling diodes
In his paper, Basler presents a monolithic bidirectional switch (MBDS) with two integrated free-wheeling diodes and a blocking voltage of 1200 V. The component can be used in bidirectional chargers and drives for electric vehicles as well as in systems for generating and storing renewable energy and can achieve significant performance and efficiency advantages. The MBDS was developed on the basis of the Fraunhofer IAF GaN-on-insulator technology, which uses highly insulating material such as silicon carbide (SiC) and sapphire as a carrier substrate for the GaN power semiconductor to improve the insulation between the components and increase the breakdown voltage.
The MBDS blocks voltage and conducts current in two directions, which saves chip space and reduces conduction losses as there is only one split depletion region. The GaN MBDS can be used in grid-connected power converters for energy generation and storage as well as in electric drive systems. In these applications, the MBDS enables the development of systems in the 1200 V class.
Presentation of the award-winning paper on May 8, 2025
Michael Basler will present his award-winning paper on the 1200 V GaN MBDS with integrated periphery on May 8 from 10:10 to 10:30 a.m. at the PCIM Conference in the oral session “GaN Devices II” on Stage München 1.
Find more information on Michael Basler's paper in the corresponding press release: Bidirectional 1200 V GaN switch with integrated free-wheeling diodes - Fraunhofer IAF
Funding from BMWK
The development results are part of the GaN4EmoBiL project, which is funded by the German Federal Ministry of Economics and Climate Action (BMWK).
The GaN4EmoBiL project is funded by the Federal Ministry of Economics and Climate Protection (BMWK).