Fraunhofer IAF at the International Microwave Symposium 2025

Fraunhofer IAF will once again be strongly represented at this year's International Microwave Symposium (IMS) of the IEEE Microwave Theory and Technology Society (MTT-S). The world’s leading conference for high-frequency electronics will take place from June 15 to 20 at the Moscone Center in San Francisco (CA, USA) and offers a wide range of opportunities for professional exchange and personal networking.

A total of eight researchers from Fraunhofer IAF will present the latest results of their research and development work in talks, poster sessions, and workshops. Fraunhofer IAF is involved in a total of 15 presentations.

The presentations will focus on efficient high-performance components, circuits, and modules for innovative high-frequency electronic applications, including mobile communications and satellite communications, cryogenic measurement technology, and industrial radar solutions.

A special highlight this year is the workshop “Advanced Low-Noise Measurement Techniques for Cutting-Edge Room-Temperature and Cryogenic Applications” (WMB), organized by Dr. Fabian Thome (Fraunhofer IAF) together with Dr. Mehmet Ogut (NASA Jet Propulsion Laboratory), which will take place on Monday, June 16, 2025, from 8:00 to 11:50 a.m.

Overview of all presentations at IMS 2025 with participation of Fraunhofer IAF

Paper presentations

• Tu3D-2 – Thome, Fabian et al.: A 4-420-GHz Distributed Amplifier MMIC in a 20-nm InGaAs-on-Si HEMT Technology With 11±2-dB Gain
• Tu4D-1 – Konstantin Kuliabin et al.: Ultrawideband Vector Modulators for Next-Gen Wireless Networks in the 200–480GHz Range
• We1G-4 – Patrick Umbach et al.: Monolithic Implementation and Performance Comparison of Three Single Balanced Architectures for D-Band HEMT Mixers
• We3B-4 – Thomas Zieciak et al.: A D-Band Front-End T/R MMIC in a 70-nm GaN HEMT Technology
• We3H-5 – Safari Mugisho, Moïse et al.: A Ka-Band GaN Doherty Power Amplifier with High Efficiency Over a Fractional Bandwidth of 20.4%
• Th1F-1 – Cimbili, Bharath Kumar et al.: A High-Efficiency E-Band GaN Doherty Power Amplifier with 35.7dBm Output Power and 22.8%/16.8% Peak/6-dB Back-Off Efficiency
• Th1F-3 – Cimbili, Bharath Kumar Cimbili et al.: A Compact Wideband Low-Loss On-Chip Power Combiner for High-Efficiency GaN mm-Wave Power Amplifiers
• Th2F-3 – Gashi, Bersant et al.: 300GHz 8×1 Active Phased Array MMIC with On-Chip Power Amplifiers, Vector Modulators, and Antennas
• Th3D-2 – Patrick Umbach et al.: Integrated Solution for Linear and Non-Linear Single-Touchdown On-Wafer Characterization of D-Band Mixers

Poster presentations

• IF1-10 – Sigle, Eric et al.: A Full V-Band High-Output Power Frequency Doubler with High Fourth Harmonic Suppression in a InGaAs mHEMT Technology
• IF1-46 – Heinz, Felix et al.: Extended D-Band Low-Noise Amplifier MMICs Based on a 50-nm Metamorphic HEMT Technology
• Umbach, Patrick et al. – Nonlinear Millimeter Wave Power Amplifier Analysis with Hot S-Parameters [as part of the ARFTG]

Presentations as part of workshops

• WSG-6 – Thome, Fabian et al.: InGaAs LNAs for SATCOM
• WMB-3 – Heinz, Felix et al.: Cryogenic On-Wafer Noise Measurements Using a Cold-Attenuator Method
• WMB-4 – Patrick Pütz et al.: Measurement and Qualification of RF Performance Characteristics of Cryogenic Low-Noise Amplifiers in the Context of Small Series Production

About IMS 2025

This year’s IEEE Microwave Theory and Technology Society (MTT-S) International Microwave Symposium (IMS 2025) takes place on June 15–20, 2025, in San Francisco (CA, USA). Co-located with the IEEE Radio Frequency Integrated Circuits Symposium (RFIC) and the Automatic Radio Frequency Techniques Group (ARFTG) Conference, IMS 2025 offers an unparalleled platform for learning, networking, and collaboration. IMS 2025 will feature innovative and disruptive technologies through various thematic areas, including Systems and Applications, Aerospace and Security, Chips for Critical Infrastructure, and Emerging Technologies, Innovations, and Entrepreneurship.