Optoelectronics

At Fraunhofer IAF, we carry out research on innovations in both optoelectronic components and systems.

 

We develop infrared semiconductor lasers, laser systems based on them as well as LED modules, infrared and UV detectors specifically for your field of application.

In the field of semiconductor lasers, we focus on the technologies of optically pumped semiconductor disk lasers and quantum cascade lasers (QCL). The semiconductor lasers cover the wavelength range from 2 – 11 µm.

Our detector technology for applications in Stirling-cooled, high-resolution cameras and in industrial measurement technology for the mid- and long-wave infrared is unique worldwide. It enables the production of spatially high-resolution, high-performance thermal imaging cameras, which either operate in the classic monospectral mode or have the capability of color vision in the infrared.

Our semiconductor lasers and detectors can be used for a variety of applications: from quality control of food and pharmaceuticals to monitoring industrial processes and detection of explosives.

What we offer

Miniaturized, broadband spectrally tunable quantum cascade laser with emission wavelengths in the mid-infrared range and high scanning frequency up to 1 kHz.
© Fraunhofer IAF
Miniaturized, broadband spectrally tunable quantum cascade laser with emission wavelengths in the mid-infrared range and high scanning frequency up to 1 kHz.
  • Epitaxy of laser structures on customer order

  • Processed QCL chips (chip-on-submount)  

  • Development of customer-specific laser modules including control electronics and software

  • Functional demonstrators for infrared spectroscopic sensor technology

  • Development of front and back side technology processes for quantum cascade lasers

Devices using heterojunctions are being developed in order to improve the performance. These have significant advantages over commonly used homojunction devices, particularly in the field of dark current and noise behavior.
© Fraunhofer IAF
Devices using heterojunctions are being developed in order to improve performance. These have significant advantages over commonly used homojunction devices, particularly in the field of dark current and noise behavior.
  • Foundry Services for the epitaxy of IR detector structures based on III-V semiconductors 

  • Development of front and back side technology processes for detector arrays 

  • Complete small series production runs for imaging detector arrays and thermoelectrically cooled or uncooled individual detectors

Current projects

More information on the current research projects can be found here