Electronic Circuits

At Fraunhofer IAF, researchers develop innovations in high-frequency electronics and power electronics along the III-V semiconductor value chain.

In high-frequency electronics, researchers are working on the basis of the compound semiconductors InGaAs and GaN in frequency ranges up to 1 THz and are realizing high-performance and efficient circuits, components, modules, and subsystems for applications such as fifth and sixth generation mobile communications (5G/6G), radar systems, and components for satellite communications (70–500 nm HEMT technologies) as well as high-precision microwave radiometers and quantum computers (20–50 nm mHEMT technologies).

In addition, Fraunhofer IAF offers extremely low-noise mHEMT amplifiers based on the compound semiconductor InGaAs for use under cryogenic conditions – ideal for applications in quantum computing and radio astronomy. With a gate length of 50 nm and cut-off frequencies up to 1 THz, these amplifiers enable the world's lowest noise figures with negligible heating and at extremely low temperatures (-270 °C).

In the field of power electronics, Fraunhofer IAF focuses on GaN-based devices, circuits, and modules for highest energy efficiency and maximum voltage for electromobility, air conditioning and information technology. For this purpose, Fraunofer IAF researchers develop, e.g., innovative lateral and vertical 1200 V components.