Electronic circuits

At Fraunhofer IAF, research is carried out on innovations in both high-frequency electronics and power electronics.

The high frequency electronics covers a range up to 850 GHz. These high frequencies and bandwidths are particularly useful for precise sensors, because millimeter-waves penetrate dust, fog, rain, snow and clothing.

In the field of power electronics, IAF researchers are working on the development of power transistors and circuits based on gallium nitride (GaN). In particular, rates of up to 10 Gbit/s can be achieved for data transmission from mobile phone to mobile phone and energy can be saved at the same time. This is essential for future 5G and 6G mobile communication systems.

Furthermore, we research and develop new materials, for example AlScN layers for piezoelectric filters.

What we offer

Amplifier module: The low-noise, high-sensitivity microwave amplifiers of the Fraunhofer IAF can already detect signals of only a few nanowatts. They are based on the semiconductor material indium-gallium-arsenide.
© Fraunhofer IAF
Amplifier module: The low-noise, high-sensitivity microwave amplifiers of the Fraunhofer IAF can already detect signals of only a few nanowatts. They are based on the semiconductor material indium-gallium-arsenide.
  • High frequency circuits and modules
    High frequency filters
  • MMIC design
  • Device modelling
  • Prototypes and small series production of MMICs
  • Assembly of circuits in modules

Scientists at the IAF are working with partners to develop high-voltage transistors based on the high-performance semiconductor gallium nitride for use in voltage transformers.
Scientists at the IAF are working with partners to develop high-voltage transistors based on the high-performance semiconductor gallium nitride for use in voltage transformers.
  • RF broadband amplifier MMICs and modules from 0 to 40 GHz
  • High-power amplifiers up to 1 kW in housing and as modules
  • Heterointegrated GaN-on-SiC and GaN-on-Si MMICs
  • MMICs and modules for directional radio at 28 GHz, 39 GHz, 71 - 84 GHz and 94 GHz
  • Prototypes and small series production of GaN MMICs with gate lengths of 0.5 µm, 0.25 µm and 100 nm
  • Power generation up to 200 GHz
  • Evaluation of assembly technology and reliability of GaN switches
  • 8-inch GaN-on-Si epitaxy

High frequency measurement facility
© Fraunhofer IAF
Fraunhofer IAF features a variety of advanced high frequency measurement systems for the characterization of integrated circuits and high frequency modules.

The following measurement facilities are available:

  • S-parameters up to 1.1 THz
  • Noise parameters up to 50 GHz
  • Noise figure up to 750 GHz
  • Power up to 300 GHz
  • Intermodulation up to 50 GHz
  • DC and RF measurements at cryogenic temperatures
  • Lifetime tests at DC and RF 

Voices from our network

»The collaboration between Fraunhofer IAF and Rohde & Schwarz is well established. Together, we manage to transfer the latest research results into innovative industrial applications in the shortest possible time.«

Robert Ziegler, Director MMIC Development Corporate R&D, Rohde & Schwarz

»Power amplifiers developed by Fraunhofer IAF, with its best-in-class 0.1 μm GaN process, enable the development of a new generation of highly integrated and high-power solutions.«

Dr. Alessandro Fonte, Senior Engineer, Member of Technical Staff R&D Laboratory, SIAE Microelettronica

»Energy efficiency and sustainability play an increasingly important role in power electronics. With the development of compact GaN-based inverter modules, Fraunhofer IAF can take e-mobility a decisive step forward.«

Dr. Kristine Bentz, Head of Research Funding, Vector Stiftung

Energy-efficient electronics

High Frequency Electronics at Fraunhofer IAF

 

Learn more about the High Frequency Electronics at Fraunhofer IAF. We offer integrated circuits and modules from 1 - 600 GHz with top values in terms of gain, frequencies and noise figure. For example, we are developing the lowest noise amplifiers in the world. Take a look in our clean room and find out more about the range of applications of our modules for communication and radar.

Power Electronics at Fraunhofer IAF

 

In the field of power electronics, IAF researchers are working on the development of power transistors and circuits based on gallium nitride (GaN). Furthermore, we research and develop new materials, for example high-quality graphene layers and flakes as well as AlScN layers for piezoelectric filters.