At Fraunhofer IAF, research is carried out on innovations in both high-frequency electronics and power electronics.
The high frequency electronics covers a range up to 850 GHz. These high frequencies and bandwidths are particularly useful for precise sensors, because millimeter-waves penetrate dust, fog, rain, snow and clothing.
In the field of power electronics, IAF researchers are working on the development of power transistors and circuits based on gallium nitride (GaN). In particular, rates of up to 10 Gbit/s can be achieved for data transmission from mobile phone to mobile phone and energy can be saved at the same time. This is essential for future 5G and 6G mobile communication systems.
Furthermore, we research and develop new materials, for example AlScN layers for piezoelectric filters.