Electronic circuits

At Fraunhofer IAF, research is carried out on innovations in both high-frequency electronics and power electronics.
 

The high frequency electronics covers a range up to 850 GHz. These high frequencies and bandwidths are particularly useful for precise sensors, because millimeter-waves penetrate dust, fog, rain, snow and clothing.

In the field of power electronics, IAF researchers are working on the development of power transistors and circuits based on gallium nitride (GaN). In particular, rates of up to 10 Gbit/s can be achieved for data transmission from mobile phone to mobile phone and energy can be saved at the same time. This is essential for future 5G and 6G mobile communication systems.

Furthermore, we research and develop new materials, for example high-quality graphene layers and flakes as well as AlScN layers for piezoelectric filters.

What we offer

 

High Frequency Electronics           Power Electronics Measurement Service
  • High frequency circuits and modules
    High frequency filters
  • MMIC design
  • Device modelling
  • Prototypes and small series production of MMICs
  • Assembly of circuits in modules
  • Realization of RF broadband amplifier MMICs and modules from 0 to 40 GHz
  • High-power amplifier up to 1 kW in housing and as module
  • Heterointegrated GaN-on-SiC and GaN-on-Si MMICs
  • MMICs and modules for directional radio at 28 GHz, 39 GHz, 71 - 84 GHz and 94 GHz
  • Prototypes and small series production of GaN-MMICs with gate lengths of 0.5 µm, 0.25 µm and 100 nm
  • Power generation up to 200 GHz
  • Evaluation of assembly technology and reliability of GaN switches
  • 8-inch GaN-on-Si epitaxy
  • S-parameters up to 1.1 THz
  • Noise parameters up to 50 GHz
  • Noise figures up to 750 GHz
  • Power up to 300 GHz
  • Intermodulation up to 50 GHz
  • DC and RF measurements at cryogenic temperatures
  • Lifetime tests of DC and RF

What happens at IAF?

A short overview

© Fraunhofer IAF

Integrated GaN power cicuits

Fraunhofer IAF is developing efficient power transistors and circuits on large-scale, low-cost Si substrates.

© Fraunhofer IAF

Multi-project wafer runs for customers

Based on its epitaxial and technological capabilities, Fraunhofer IAF offers electronic multi-project wafer runs (MPW) and complete masks processings for external customers.

© Fraunhofer IAF

Energy-efficient voltage converters

The semiconductor gallium nitride increases efficiency and saves a considerable amount of energy.

© Fraunhofer IAF

Power amplifiers for mobile communication

In order to improve the energy efficiency of wireless telecommunication networks, the Fraunhofer IAF develops customer specific amplifier modules.

© Fraunhofer IAF, Photobank – Fotolia.com

Data transport for industry 4.0

Currently, Fraunhofer IAF develops adaptive wireless point-to-point terahertz communication systems for interiors.

© Fraunhofer IAF

Radar for sensing and material testing

The frequency range of 75 –110 GHz (W-band) is ideal for radars to detect small objects from a distance, even if visibility is restricted.

© Bundeswehr

Distance radar for helicopters

During difficult landing maneuvers in snow (white-out effect) or in very dusty regions (brown-out effect), millimeter wave sensors help helicopter pilots to land safely.