Publications of the business unit Power Electronics

2022

Jahr
Year
Titel/Autor:in
Title/Author
Publikationstyp
Publication Type
2022 Bandwidth and Power Back-Off Performances of a Class-EM/F3Power Amplifier
Safari Mugisho, Moise; Thian, Mury; Piacibello, Anna; Camarchia, Vittorio; Quay, Rüdiger
Konferenzbeitrag
Conference Paper
2022 In-situ Detection of Degradation in Power Electronic Modules During Lifetime Testing using Lock-in Thermography
Schiffmacher, Alexander; Malasani, Shreyas; Prescher, Mario; Kirste, Lutz; Wilde, Juergen
Konferenzbeitrag
Conference Paper
2022 Aluminium-Scandium-Nitrid für breitbandige Oberflächenwellenfilter
Feil, Niclas
Dissertation
Doctoral Thesis
2022 An advanced Bragg diffraction imaging technique to characterize defects in SiC and GaN : Topic/category, e.g. AM: Advanced Metrology
Caliste, Thu Nhi Tran Thi; Kirste, Lutz; Drouin, Alexis; Baruchel, Jose
Konferenzbeitrag
Conference Paper
2022 Leakage mechanism in AlxGa1-xN/GaN heterostructures with AlN interlayer
Köhler, Klaus; Pletschen, Wilfried; Kirste, Lutz; Leone, Stefano; Müller, Stefan; Aidam, Rolf; Bronner, Wolfgang; Brückner, Peter; Waltereit, Patrick; Polyakov, Vladimir; Ambacher, Oliver
Zeitschriftenaufsatz
Journal Article
2022 E-Band Ultra-Low-Noise (4.5 dB) and High-Power (27 dBm) GaN T/R Front-End MMIC
Ture, Erdin; Thome, Fabian; Schwantuschke, Dirk; Mikulla, Michael; Quay, Rüdiger
Konferenzbeitrag
Conference Paper
2022 Harmonic-Injection Doherty Power Amplifiers with a High Small-Signal Gain
Safari Mugisho, Moise; Maity, Saikat Kumar; Friesicke, Christian; Quay, Rüdiger
Konferenzbeitrag
Conference Paper
2022 On the origin of the turn-on voltage drop of GaN-based current aperture vertical electron transistors
Döring, Philipp; Sinnwell, Matthias; Reiner, Richard; Driad, Rachid; Waltereit, Patrick; Leone, Stefano; Müller, Stefan; Mikulla, Michael; Ambacher, Oliver
Zeitschriftenaufsatz
Journal Article
2022 A 41.5 dBm Broadband AlGaN/GaN HEMT Balanced Power Amplifier at K-Band
Samis, Stanislav; Friesicke, Christian; Maier, Thomas; Quay, Rüdiger; Jacob, Arne F.
Konferenzbeitrag
Conference Paper
2022 A Wideband E/W-Band Low-Noise Amplifier MMIC in a 70-nm Gate-Length GaN HEMT Technology
Thome, Fabian; Brückner, Peter; Leone, Stefano; Quay, Rüdiger
Zeitschriftenaufsatz
Journal Article
2022 Fundamental Studies on Crystallization and Reaching the Equilibrium Shape in Basic Ammonothermal Method: Growth on a Native Lenticular Seed
Sochacki, Tomasz; Kucharski, Robert; Grabianska, Karolina; Weyher, Jan L.; Malgorzata, Iwinska; Bockowski, Michal; Kirste, Lutz
Zeitschriftenaufsatz
Journal Article
2022 Switching Characteristics of Integrated GaN-on-Si Half-Bridge and Driver Circuits
Mönch, Stefan
Dissertation
Doctoral Thesis
2022 Influence of structural properties on the ferroelectric behavior of hexagonal AlScN
Yassine, Mohamed; Nair, Akash; Fammels, J.; Wade, E.; Fu, Z.; Yassine, Ali; Kirste, Lutz; Ambacher, Oliver
Zeitschriftenaufsatz
Journal Article
2022 AlGaN/GaN-basierte ionenselektive Feldeffekttransistoren zur pH-Wert-Messung in nichtwässrigen Lösungen
Anzt, Johannes
Dissertation
Doctoral Thesis
2022 Broadband 100-W Ka-Band SSPA Based on GaN Power Amplifiers
Neininger, Philipp; John, Laurenz; Zink, Martin; Meder, Dirk; Kuri, Michael; Tessmann, Axel; Friesicke, Christian; Mikulla, Michael; Quay, Rüdiger; Zwick, Thomas
Zeitschriftenaufsatz
Journal Article
2022 Characterization of a 25V GaN d-HEMT Device through Large Signal Gate Charge Measurements and In-Converter Testing
O’Sullivan, Brendan; Fiebig, Norbert; Benkhelifa, Fouad; Mccloskey, Paul; O’Mathuna, Cian; O’Driscoll, Séamus
Konferenzbeitrag
Conference Paper
2022 Long-Reach E-band HPA for 5G Radio Link
Colzani, Alberto; Fumagalli, Matteo; Fonte, Alessandro; Traversa, Antonio; Ture, Erdin
Konferenzbeitrag
Conference Paper
2022 Design and Characterization of an Interleaved GaN Half-Bridge IC with Matrix Layout
Reiner, Richard; Mönch, Stefan; Waltereit, Patrick; Benkhelifa, Foud; Basler, Michael; Mikulla, Michael; Quay, Rüdiger
Konferenzbeitrag
Conference Paper
2022 Function Blocks of a Highly-Integrated All-in-GaN Power IC for DC-DC Conversion
Basler, Michael; Reiner, Richard; Mönch, Stefan; Waltereit, Patrick; Quay, Rüdiger
Konferenzbeitrag
Conference Paper
2022 100-V GaN HEMT Technology with record-high efficiency at C-Band frequencies
Krause, Sebastian; Brückner, Peter; Quay, Rüdiger
Konferenzbeitrag
Conference Paper
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