Publikationen des Geschäftsfelds Leistungselektronik

2020

Jahr
Year
Titel/Autor:in
Title/Author
Publikationstyp
Publication Type
2020 Metalorganic chemical vapor phase deposition of AlScN/GaN heterostructures
Ligl, Jana; Leone, Stefano; Manz, Christian; Kirste, Lutz; Doering, Philipp; Fuchs, Theodor; Prescher, Mario; Ambacher, Oliver
Zeitschriftenaufsatz
Journal Article
2020 A phase shifter with integrated PA MMIC for Ka-Band frequencies
Neininger, Philipp; Amirpour, Raul; John, Laurenz; Friesicke, Christian; Quay, Rüdiger; Zwick, Thomas
Konferenzbeitrag
Conference Paper
2020 A novel 32-Gb/s 5.6-Vpp digital-to-analog converter in 100 nm GaN technology for 5G signal generation
Weiß, Markus; Friesicke, Christian; Quay, Rüdiger; Ambacher, Oliver
Konferenzbeitrag
Conference Paper
2020 Expitaxial growth of GaN/Ga2O3 and Ga2O3/GaN heterostructures for novel high electron mobility transistors
Leone, Stefano; Fornari, Roberto; Bosi, Matteo; Montedoro, Vicenzo; Kirste, Lutz; Doering, Philipp; Benkhelifa, Fouad; Prescher, Mario; Manz, Christian; Polyakov, Vladimir M.; Ambacher, Oliver
Zeitschriftenaufsatz
Journal Article
2020 Monolithic integration of inductive components in a GaN-on-Si technology
Basler, Michael; Mönch, Stefan; Reiner, Richard; Waltereit, Patrick; Quay, Rüdiger; Kallfass, Ingmar; Ambacher, Oliver
Konferenzbeitrag
Conference Paper
2020 Consistent surface-potential-based modeling of drain and gate currents in AlGaN/GaN HEMTs
Albahrani, Sayed Ali; Heuken, Lars; Schwantuschke, Dirk; Gneiting, Thomas; Burghartz, Joachim N.; Khandelwal, Sourabh
Zeitschriftenaufsatz
Journal Article
2020 Failure Analysis of 100 nm AlGaN/GaN HEMTs Stressed under On- and Off-State Stress
Kemmer, Tobias; Dammann, Michael; Baeumler, Martina; Polyakov, Vladimir M.; Brueckner, Peter; Konstanzer, Helmer; Quay, Rüdiger; Ambacher, Oliver
Konferenzbeitrag
Conference Paper
2020 Study of Power Amplifier Harmonic Output Termination for two AlGaN/GaN Technologies at K-/Ka-Band
Samis, Stanislav; Friesicke, Christian; Lozar, Roger; Maier, Thomas; Brueckner, Peter; Quay, Rüdiger; Jacob, Arne
Konferenzbeitrag
Conference Paper
2020 Metal-organic chemical vapor deposition of aluminum scandium nitride
Leone, Stefano; Ligl, Jana; Manz, Christian; Kirste, Lutz; Fuchs, Theo; Menner, Hanspeter; Prescher, Mario; Wiegert, Joachim; Zukauskaite, Agne; Quay, Rüdiger; Ambacher, Oliver
Zeitschriftenaufsatz
Journal Article
2020 Optimization of metal-organic chemical vapor deposition regrown n-GaN
Leone, Stefano; Brueckner, Peter; Kirste, Lutz; Doering, Philipp; Fuchs, Theodor; Müller, Stefan; Prescher, Mario; Quay, Rüdiger; Ambacher, Oliver
Zeitschriftenaufsatz
Journal Article
2020 Reliability characteristics of vertical pin diodes on Si and GaN substrates for high-power applications
Gupta, Rohit
Master Thesis
2020 Darstellung und Simulation von AlN/GaN-Übergitterstrukturen für elektronische Bauelemente
Manz, Christian
Dissertation
Doctoral Thesis
2020 Si-substrate removal for AlGaN/GaN devices on PCB carriers
Reiner, Richard; Gerrer, Thomas; Weiss, Beatrix; Waltereit, Patrick; Mönch, Stefan; Meder, Dirk; Sinnwell, Matthias; Dammann, Michael; Quay, Rüdiger; Ambacher, Oliver
Konferenzbeitrag
Conference Paper
2020 Extreme temperature modeling of AlGaN/GaN HEMTs
Albahrani, Sayed Ali; Mahajan, Dhawal; Kargazzi, Saleh; Schwantuschke, Dirk; Gneiting, Thomas; Senesky, Debbie G.; Khandelwal, Sourabh
Zeitschriftenaufsatz
Journal Article
2020 Fan-out wafer level packaging of GaN components for RF applications
Braun, Tanja; Nguyen, Thanh Duy; Voges, Steves; Wöhrmann, Markus; Gernhardt, Robert; Becker, Karl-Friedrich; Ndip, Ivan; Freimund, Damian; Schneider-Ramelow, Martin; Lang, Klaus-Dieter; Schwantuschke, Dirk; Ture, Erdin; Pretl, Michael; Engels, Sven
Konferenzbeitrag
Conference Paper
2020 First demonstration of G-band broadband GaN power amplifier MMICs operating beyond 200 GHz
Cwiklinski, Maciej; Brueckner, Peter; Leone, Stefano; Krause, Sebastian; Friesicke, Christian; Massler, Hermann; Quay, Rüdiger; Ambacher, Oliver
Konferenzbeitrag
Conference Paper
2020 A 600V GaN-on-Si power IC with integrated gate driver, freewheeling diode, temperature and current sensors and auxiliary devices
Mönch, Stefan; Reiner, Richard; Waltereit, Patrick; Hückelheim, Jan; Meder, Dirk; Quay, Rüdiger; Ambacher, Oliver; Kallfass, Ingmar
Konferenzbeitrag
Conference Paper
2020 A 600 V p-GaN gate HEMT with intrinsic freewheeling schottky-diode in a GaN power IC with bootstrapped driver and sensors
Mönch, Stefan; Reiner, Richard; Waltereit, Patrick; Müller, Stefan; Quay, Rüdiger; Ambacher, Oliver; Kallfass, Ingmar
Konferenzbeitrag
Conference Paper
2020 Large-area lateral AlGaN/GaN-on-Si field-effect rectifier with low turn-on voltage
Basler, Michael; Reiner, Richard; Mönch, Stefan; Waltereit, Patrick; Quay, Rüdiger; Kallfass, Ingmar; Ambacher, Oliver
Zeitschriftenaufsatz
Journal Article
2020 Novel Method for Extracting Material Constants of Epitaxial Wurtzite AlScN Films on Sapphire Using Higher Order Surface Acoustic Wave Modes
Feil, Niclas M.; Mayer, Elena; Christian, Björn; Ding, Anli; Zukauskaite, Agne; Ambacher, Oliver
Konferenzbeitrag
Conference Paper
Diese Liste ist ein Auszug aus der Publikationsplattform Fraunhofer-Publica

This list has been generated from the publication platform Fraunhofer-Publica