Publikationen des Geschäftsfelds Leistungselektronik

2015

JahrAutor/Titel/QuelleDokumentart
2015Köhler, K.; Pletschen, W.; Godejohann, B.-J.; Müller, S.; Menner, H.; Ambacher, O.:
Admittance-voltage profiling of Al(x)Ga(1-x)N/GaN heterostructures: Frequency dependence of capacitance and conductance
In: Journal of applied physics, Vol.118 (2015), No.20, Art. 205702, 8 pp.
Zeitschriftenaufsatz
2015Dennler, P.; Ambacher, O. (Referent); Schumacher, H. (Referent) :
Analysis of the potential of gallium nitride based monolithic power amplifiers in the microwave domain with more than an octave bandwidth
Freiburg/Brsg., Univ., Diss., 2014
Dissertation
2015Bajwa, A.A.; Qin, Yangyang; Reiner, R.; Quay, R.; Wilde, J.:
Assembly and packaging technologies for high-temperature and high-power GaN devices
In: IEEE transactions on components, packaging and manufacturing technology, Vol.5 (2015), No.10, pp.1402-1416
Zeitschriftenaufsatz
2015Pletschen, W.; Linkohr, S.; Kirste, L.; Cimalla, V.; Müller, S.; Himmerlich, M.; Krischok, S.; Ambacher, O.:
Changes of electronic properties of AlGaN/GaN HEMTs by surface treatment
(Materials Research Society (Fall Meeting) <2014, Boston/Mass.>)
In: Kaplar, R. (Ed.): Wide-bandgap materials for solid-state lighting and power electronics: November 30 - December 5, 2014, Boston, Massachusetts, USA; Symposium T: Wide-Bandgap Materials for Solid-State Lighting and Power Electronics; held at the 2014 MRS fall meeting. Red Hook, NY: Curran, 2015. (Materials Research Society Symposium Proceedings 1736), pp. 1-6
Konferenzbeitrag
2015Hahn, H.; Reuters, B.; Geipel, S.; Schauerte, M.; Benkhelifa, F.; Ambacher, O.; Kalisch, H.; Vescan, A.:
Charge balancing in GaN-based 2-D electron gas devices employing an additional 2-D hole gas and its influence on dynamic behaviour of GaN-based heterostructure field effect transistors
In: Journal of applied physics, Vol.117 (2015), No.10, Art. 104508, 9 pp.
Zeitschriftenaufsatz
2015Jauss, S.A.; Schwaiger, S.; Daves, W.; Noll, S.; Ambacher, O.:
Charge trapping in gate-drain access region of AlGaN/GaN MIS-HEMTs after drain stress
(European Solid-State Device Research Conference (ESSDERC) <45, 2015, Graz>)
In: Pribyl, W.: 45th European Solid-State Device Research Conference, ESSDERC 2015. Proceedings: 14 - 18 September, Graz, Austria. Piscataway, NJ: IEEE, 2015, pp. 56-59
Konferenzbeitrag
2015Dammann, M.; Baeumler, M.; Brückner, P.; Bronner, W.; Maroldt, S.; Konstanzer, H.; Wespel, M.; Quay, R.; Mikulla, M.; Graff, A.; Lorenzini, M.; Fagerlind, M.; Wel, P.J. van der; Roedle, T.:
Degradation of 0.25 μm GaN HEMTs under high temperature stress test
In: Microelectronics reliability, Vol.55 (2015), No. 9-10, pp.1667-1671
Zeitschriftenaufsatz
2015Carrubba, V.; Ture, E.; Maroldt, S.; Mußer, M.; Raay, F. van; Quay, R.; Ambacher, O.:
A dual-band UMTS/LTE highly power-efficient class-ABJ doherty GaN PA
(European Microwave Conference (EuMC) <45, 2015, Paris>)
In: 45th European Microwave Conference, EuMC 2015. Proceedings: 7-10 September 2015, Paris, France. London: Horizon House, 2015, pp. 1164-1167
Konferenzbeitrag
2015Carrubba, V.; Maroldt, S.; Musser, M.; Ture, E.; Dammann, M.; Raay, F. van; Quay, R.; Brueckner, P.; Ambacher, O.:
High-efficiency, high-temperature continuous class-E sub-waveform solution AlGaN/GaN power amplifier
In: IEEE microwave and wireless components letters, Vol.25 (2015), No.8, pp.526-528
Zeitschriftenaufsatz
2015Ture, E.; Schwantuschke, D.; Tessmann, A.; Wagner, S.; Brueckner, P.; Mikulla, M.; Quay, R.; Ambacher, O.:
High-gain AlGaN/GaN HEMT single chip e-band power amplifier MMIC with 30 dBm output power
(Compound Semiconductor Integrated Circuit Symposium (CSICS) <38, 2015, New Orleans/La.>)
In: Institute of Electrical and Electronics Engineers -IEEE-: IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2015: 11-14 October 2015, New Orleans, LA, USA. Piscataway, NJ: IEEE, 2015, 4 pp.
Konferenzbeitrag
2015Chéron, J.; Campovecchio, M.; Quéré, R.; Schwantuschke, D.; Quay, R.; Ambacher, O.:
High-gain over 30% PAE power amplifier MMICs in 100 nm GaN technology at Ka-band frequencies
(European Microwave Integrated Circuits Conference (EuMIC) <10, 2015, Paris>)
In: Institute of Electrical and Electronics Engineers -IEEE-: 10th European Microwave Integrated Circuits Conference, EuMIC 2015. Proceedings: EuMW 2015, European Microwave Week, 7-8 September 2015, Paris, France. Piscataway, NJ: IEEE, 2015, pp. 262-264
Konferenzbeitrag
2015Kaleem, S.; Kühn, J.; Quay, R.; Hein, M.:
A high-power Ka-band single-pole single-throw switch MMIC using 0.25 µm GaN on SiC
(Radio and Wireless Symposium (RWS) <2015, San Diego/Calif.>)
In: Institute of Electrical and Electronics Engineers -IEEE-: IEEE Radio and Wireless Symposium, RWS 2015. Proceedings: 25-28 January 2015; San Diego, California. Piscataway, NJ: IEEE, 2015, pp. 132-134
Konferenzbeitrag
2015Wespel, M.; Dammann, M.; Polyakov, V.; Reiner, R.; Waltereit, P.; Weiss, B.; Quay, R.; Mikulla, M.; Ambacher, O.:
High-voltage stress time-dependent dispersion effects in AlGaN/GaN HEMTs
(International Reliability Physics Symposium (IRPS) <53, 2015, Monterey/Calif.>)
In: Institute of Electrical and Electronics Engineers -IEEE-: IEEE International Reliability Physics Symposium, IRPS 2015. Vol.2: Monterey, California, USA, 19 - 23 April 2015. Piscataway, NJ: IEEE, 2015, pp. 705-709
Konferenzbeitrag
2015Reiner, R.; Waltereit, P.; Weiss, B.; Wespel, M.; Quay, R.; Schlechtweg, M.; Mikulla, M.; Ambacher, O.:
Integrated reverse-diodes for GaN-HEMT structures
(International Symposium on Power Semiconductor Devices & IC's (ISPSD) <27, 2015, Hong Kong>)
In: Institute of Electrical and Electronics Engineers -IEEE-: IEEE 27th International Symposium on Power Semiconductor Devices & IC's, ISPSD 2015. Proceedings: May 10-14, 2015; Kowloon Shangri-La, Hong Kong. Piscataway, NJ: IEEE, 2015, pp. 45-48
Konferenzbeitrag
2015Mußer, M.; Ambacher, O. (Referent); Manoli, Y. (Betreuer) :
Micro-system: Gallium nitride RF-broad-band high-power amplifier
Freiburg/Brsg., Univ., Diss., 2014
Dissertation
2015Kaleem, S.; Kühn, J.; Quay, R.; Hein, M.A.:
Microwave monolithic integrated gallium-nitride switches for low static power reconfigurable switch matrix with passive transparent state for power failure redundancy
(International Microwave Symposium (IMS) <2015, Phoenix/Ariz.>)
In: Papapolymerou, J. (Ed.): IEEE MTT-S International Microwave Symposium, IMS 2015: Phoenix, Arizona, USA, 17 - 22 May 2015. Piscataway, NJ: IEEE, 2015, pp. 906-909
Konferenzbeitrag
2015Schwantuschke, D.; Kallfass, I. (Referent); Ambacher, O. (Referent) :
Modeling of dispersive millimeter-wave GaN HEMT devices for high power amplifier design
Freiburg/Brsg., Univ., Diss., 2015
Dissertation
2015Mönch, S.; Costa, M.; Barner, A.; Kallfass, I.; Reiner, R.; Weiss, B.; Waltereit, P.; Quay, R.; Ambacher, O.:
Monolithic integrated quasi-normally-off gate driver and 600 V GaN-on-Si HEMT
(Workshop on Wide Bandgap Power Devices and Applications (WiPDA) <3, 2015, Blacksburg/Va.>)
In: Institute of Electrical and Electronics Engineers -IEEE-: IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2015: Blacksburg, Virginia, USA, November 2-4, 2015. Piscataway, NJ: IEEE, 2015, pp. 92-97
Konferenzbeitrag
2015Dennler, P.; Maroldt, S.; Quay, R.; Ambacher, O.:
Monolithic three-stage 6-18GHz high power amplifier with distributed interstage in GaN technology
(European Microwave Integrated Circuits Conference (EuMIC) <10, 2015, Paris>)
In: Institute of Electrical and Electronics Engineers -IEEE-: 10th European Microwave Integrated Circuits Conference, EuMIC 2015. Proceedings: EuMW 2015, European Microwave Week, 7-8 September 2015, Paris, France. Piscataway, NJ: IEEE, 2015, pp. 29-32
Konferenzbeitrag
2015Weiss, B.; Reiner, R.; Waltereit, P.; Müller, S.; Wespel, M.; Quay, R.; Ambacher, O.:
Monolithically-integrated mulitlevel inverter on lateral GaN-on-Si technology for high-voltage applications
(Compound Semiconductor Integrated Circuit Symposium (CSICS) <38, 2015, New Orleans/La.>)
In: Institute of Electrical and Electronics Engineers -IEEE-: IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2015: 11-14 October 2015, New Orleans, LA, USA. Piscataway, NJ: IEEE, 2015, pp. 156-159
Konferenzbeitrag
2015Bajwa, A.A.; Wilde, J. (Referent); Ambacher, O. (Referent) :
New assembly and packaging technologies for high-power and high-temperature GaN and SiC devices
Freiburg/Brsg., Univ., Diss., 2015
Dissertation
2015Benkhelifa, F.; Müller, S.; Polyakov, V.M.; Ambacher, O.:
Normally-off AlGaN/GaN/AlGaN double heterostructure FETs with a thick undoped GaN gate layer
In: IEEE Electron Device Letters, Vol.36 (2015), No.9, pp.905-907
Zeitschriftenaufsatz
2015Maier, F.; Grede, A.; Gruner, D.; Quay, R.; Waltereit, P.; Ambacher, O.:
A novel broadband high-power source-pull/load-pull concept for the HF- to UHF-range
(European Microwave Conference (EuMC) <45, 2015, Paris>)
In: 45th European Microwave Conference, EuMC 2015. Proceedings: 7-10 September 2015, Paris, France. London: Horizon House, 2015, pp. 1279-1282
Konferenzbeitrag
2015Ture, E.; Brückner, P.; Raay, F. van; Quay, R.; Ambacher, O.; Alsharef, M.; Granzner, R.; Schwierz, F.:
Performance and parasitic analysis of sub-micron scaled tri-gate AlGaN/GaN HEMT design
(European Microwave Integrated Circuits Conference (EuMIC) <10, 2015, Paris>)
In: Institute of Electrical and Electronics Engineers -IEEE-: 10th European Microwave Integrated Circuits Conference, EuMIC 2015. Proceedings: EuMW 2015, European Microwave Week, 7-8 September 2015, Paris, France. Piscataway, NJ: IEEE, 2015, pp. 97-100
Konferenzbeitrag
2015Mönch, S.; Costa, M.; Barner, A.; Kallfass, I.; Reiner, R.; Weiss, B.; Waltereit, P.; Quay, R.; Ambacher, O.:
Quasi-normally-off GaN gate driver for high slew-rate d-mode GaN-on-Si HEMTs
(International Symposium on Power Semiconductor Devices & IC's (ISPSD) <27, 2015, Hong Kong>)
In: Institute of Electrical and Electronics Engineers -IEEE-: IEEE 27th International Symposium on Power Semiconductor Devices & IC's, ISPSD 2015. Proceedings: May 10-14, 2015; Kowloon Shangri-La, Hong Kong. Piscataway, NJ: IEEE, 2015, pp. 373-376
Konferenzbeitrag
2015Cäsar, Markus; Ambacher, Oliver :
Reliability studies of GaN high electron mobility transistors
Stuttgart: Fraunhofer Verlag, 2015
(Science for systems 22)
Zugl.: Freiburg/Brsg., Univ., Diss., 2013
ISBN 3-8396-0897-X
Dissertation
2015Friesicke, C.; Quay, R.; Jacob, A.F.:
The resistive-reactive class-J power amplifier mode
In: IEEE microwave and wireless components letters, Vol.25 (2015), No.10, pp.666-668
Zeitschriftenaufsatz
2015Weiss, B.; Reiner, R.; Quay, R.; Waltereit, P.; Mikulla, M.; Schlechtweg, M.; Ambacher, O.:
Switching frequency modulation for GaN-based power converters
(Energy Conversion Congress and Exposition (ECCE) <7, 2015, Montreal>)
In: Institute of Electrical and Electronics Engineers -IEEE-: ECCE 2015, IEEE Energy Conversion Congress & Exposition. Proceedings: September 20-24, 2015, Montreal, Canada. Piscataway, NJ: IEEE, 2015, pp. 4361-4366
Konferenzbeitrag
2015Kirste, L.; Danilewsky, A.N.; Sochacki, T.; Köhler, K.; Zajac, M.; Kucharski, R.; Bockowski, M.; McNally, P.J.:
Synchrotron white-beam x-ray topography analysis of the defect structure of HVPE-GaN substrates
(Conference "Wide Bandgap Semiconductor Materials and Devices" <16, 2015, Chicago/Ill.>)
In: Jang, S. (Ed.): Wide Bandgap Semiconductor Materials and Devices 16: 227th meeting of The Electrochemical Society, in Chicago, IL; May 24-28, 2015. Pennington, NJ: ECS, 2015. (ECS transactions Vol.66, Nr.1), pp. 93-106
Konferenzbeitrag
2015Hahn, H.; Benkhelifa, Fouad; Ambacher, O.; Brunner, F.; Noculak, A.; Kalisch, H.; Vescan, A.:
Threshold voltage engineering in GaN-based HFETs: A systematic study with the threshold voltage reaching more than 2 V
In: IEEE transactions on electron devices, Vol.62 (2015), No.2, pp.538-545
Zeitschriftenaufsatz
2015Benkhelifa, F.; Müller, S.; Polyakov, V.M.; Breuer, S.; Czap, H.; Manz, C.; Mikulla, M.; Ambacher, O.:
Vertical buffer leakage and temperature effects on the breakdown performance of GaN/AlGaN HEMTs on Si substrate
(Symposium on GaN & SiC Power Technologies <5, 2015, Phoenix/Ariz.>)
In: Shenai, K.: GaN & SiC Power Technologies 5 : 228th ECS Meeting, October 11, 2015 - October 15, 2015, Phoenix, AZ. Pennington, NJ: ECS, 2015. (ECS transactions 69.2015, Nr.11), pp. 65-70
Konferenzbeitrag
2015Baeumler, M.; Dammann, M.; Wespel, M.; George, R.; Konstanzer, H.; Maroldt, S.; Polyakov, V.M.; Müller, S.; Bronner, W.; Brueckner, P.; Benkhelifa, F.; Waltereit, P.; Quay, R.; Mikulla, M.; Wagner, J.; Ambacher, O.; Graff, A.; Altmann, F.; Simon-Najasek, M.; Lorenzini, M.; Fagerlind, M.; Wel, P. van der; Roedle, T.:
With electroluminescence microcopy towards more reliable AlGaN/GaN transistors
(Conference "Optical Sensing, Imaging, and Photon Counting - Nanostructured Devices and Applications" <2015, San Diego/Calif.>)
In: Razeghi, M.: Optical Sensing, Imaging, and Photon Counting: Nanostructured Devices and Applications: 11-13 August 2015; San Diego, California, United States. Bellingham, WA: SPIE, 2015. (Proceedings of SPIE 9555), Paper 95550Y, 14 pp.
Konferenzbeitrag
Diese Publikationsliste wurde aus der Publikationsdatenbank Fraunhofer-Publica erstellt.