Publikationen des Geschäftsfelds Leistungselektronik

2016

JahrAutor/Titel/QuelleDokumentart
2016Friesicke, C.; Feuerschütz, P.; Quay, R.; Ambacher, O.; Jacob, A.F.:
A 40 dBm AlGaN/GaN HEMT power amplifier MMIC for SatCom applications at K-Band
(International Microwave Symposium (IMS) <2016, San Francisco/Calif.>)
In: Lin, J. (Ed.): IEEE MTT-S International Microwave Symposium, IMS 2016: 22- 27 May 2016, San Francisco, California, USA. Piscataway, NJ: IEEE, 2016, 4 pp.
Konferenzbeitrag
2016Feuerschütz, P.; Rave, C.; Samis, S.; Friesicke, C.; Quay, R.; Konrath, W.; Hirche, K.; Schobert, D.; Schneider, M.; Jacob, A.F.:
Active multi-feed satcom systems with GaN SSPA at K-band
(German Microwave Conference (GeMiC) <10, 2016, Bochum>)
In: Institute of Electrical and Electronics Engineers -IEEE-: 10th German Microwave Conference, GeMIC 2016. Proceedings: 14-16 March 2016, Bochum, Germany. Piscataway, NJ: IEEE, 2016, pp. 31-34
Konferenzbeitrag
2016Weiss, B.; Reiner, R.; Waltereit, P.; Quay, R.; Ambacher, O.:
Analysis and modeling of GaN-based multi field plate Schottky power diodes
(Workshop on Control and Modeling for Power Electronics (COMPEL) <17, 2016, Trondheim>)
In: Institute of Electrical and Electronics Engineers -IEEE-: IEEE 17th Workshop on Control and Modeling for Power Electronics, COMPEL 2016: 27-30 June 2016, Trondheim, Norway. Piscataway, NJ: IEEE, 2016, 6 pp.
Konferenzbeitrag
2016Espinosa, N.; Ambacher, O. (Referent) :
Dynamic detection of target DNA with AlGaN/GaN high electron mobility transistors
Freiburg, Univ., Diss., 2016
Dissertation
2016Ture, E.; Brueckner, P.; Quay, R.; Ambacher, O.; Alsharef, M.; Granzner, R.; Schwierz, F.:
Enhancement-mode AlGaN/GaN FinFETs with high on/off performance in 100 nm gate length
(European Microwave Integrated Circuits Conference (EuMIC) <11, 2016, London>)
In: European Microwave Association: 11th European Microwave Integrated Circuits Conference, EuMIC 2016. Proceedings: European Microwave Week (EuMW) 2016, 3-4 Oct 2016, London, UK. London: Horizon House, 2016, pp. 61-64
Konferenzbeitrag
2016Weiß, M.; Ambacher, O. (Referent); Quay, R. (Referent) :
Evaluation, design and realisation of a Riemann Pump for the frequency range of 0..6 GHz for 5G mobile communication
Freiburg, Univ., Master Thesis, 2016
Master Thesis
2016Unger, C.; Mocanu, M.; Pfost, M.; Waltereit, P.; Reiner, R.:
Experimental analysis of the gate-leakage-induced failure mechanism in GaN HEMTs
(International Semiconductor Conference (CAS) <39, 2016, Sinaia>)
In: Institute of Electrical and Electronics Engineers -IEEE-: International Semiconductor Conference, CAS 2016. Proceedings: October 10-12, 2016, Sinaia, Romania. Piscataway, NJ: IEEE, 2016, pp. 127-130
Konferenzbeitrag
2016Schwantuschke, D.; Henneberger, R.; Wagner, S.; Tessmann, A.; Kallfass, I.; Brueckner, P.; Quay, R.; Ambacher, O.:
GaN-based E-band power amplifier modules
(European Microwave Conference (EuMC) <46, 2016, London>)
In: European Microwave Association: 46th European Microwave Conference, EuMC 2016. Proceedings: 4-6 October 2016, London, UK, European Microwave Week (EuMW) 2016. London: Horizon House, 2016, 4 pp.
Konferenzbeitrag
2016Quay, R.:
Group III-Nitride microwave monolithically integrated circuits
In: Medjdoub, F.: Gallium Nitride (GaN). Physics, devices, and technology. London: Taylor & Francis, 2016. (Devices, circuits, and systems 47), pp. 141-202
Aufsatz in Buch
2016Lerner, R.; Eisenbrandt, S.; Bonafede, S.; Meitl, M. A.; Fecioru, A.; Trindade, A. J.; Reiner, R.; Waltereit, P.; Bower, C.:
Heterogeneous integration of microscale gallium nitride transistors by micro-transfer-printing
(Electronic Components and Technology Conference (ECTC) <66, 2016, Las Vegas/Nev.>)
In: Institute of Electrical and Electronics Engineers -IEEE-: IEEE 66th Electronic Components and Technology Conference, ECTC 2016. Proceedings: 31 May-3 June 2016, Las Vegas, Nevada, USA. Los Alamitos, Calif.: IEEE Computer Society Conference Publishing Services (CPS), 2016, pp. 1186-1189
Konferenzbeitrag
2016Zibold, A.; Reiner, R.; Weiss, B.; Kunzer, M.; Quay, R.; Wagner, J.; Waltereit, P.; Ambacher, O.:
High voltage GaN-based Schottky diodes in non-isolated LED buck converters
(European Conference on Power Electronics and Applications (EPE) <18, 2016, Karlsruhe>)
In: Institute of Electrical and Electronics Engineers -IEEE-: EPE 2016, ECCE Europe, 18th European Conference on Power Electronics and Applications: Karlsruhe, Germany, 5 -9 September, 2016, USB-Stick. Piscataway, NJ: IEEE, 2016, 9 pp.
Konferenzbeitrag
2016Ture, E.; Brückner, P.; Godejohann, B.-J.; Aidam, R.; Alsharef, M.; Granzner, R.; Schwierz, F.; Quay, R.; Ambacher, O.:
High-current submicrometer tri-gate GaN high-electron mobility transistors with binary and quaternary barriers
In: IEEE journal of the Electron Devices Society : J-EDS, Vol.4 (2016), No.1, pp.1-6
Zeitschriftenaufsatz
2016Lerner, R.; Eisenbrandt, S.; Bower, C.; Bonafede, S.; Fecioru, A.; Reiner, R.; Waltereit, P.:
Integration of GaN HEMTs onto silicon CMOS by micro transfer printing
(International Symposium on Power Semiconductor Devices and ICs (ISPSD) <28, 2016, Prague>)
In: Institute of Electrical and Electronics Engineers -IEEE-: 28th International Symposium on Power Semiconductor Devices & ICs, ISPSD 2016. Proceedings: June 12-16, 2016; Prague, Czech Republic. Piscataway, NJ: IEEE, 2016, pp. 451-454
Konferenzbeitrag
2016Carrubba, V.; Maroldt, S.; Ture, E.; Udeh, U.; Mußer, M.; Bronner, W.; Quay, R.; Ambacher, O.:
Internally-packaged-matched continuous inverse class-FI wideband GaN HPA
(European Microwave Integrated Circuits Conference (EuMIC) <11, 2016, London>)
In: European Microwave Association: 11th European Microwave Integrated Circuits Conference, EuMIC 2016. Proceedings: European Microwave Week (EuMW) 2016, 3-4 Oct 2016, London, UK. London: Horizon House, 2016, pp. 233-236
Konferenzbeitrag
2016Reiner, Richard; Waltereit, Patrick; Weiss, Beatrix; Wespel, M.; Meder, Dirk; Mikulla, Michael; Quay, Rüdiger; Ambacher, O.:
Linear temperature sensors in high-voltage GaN-HEMT power devices
(Annual Applied Power Electronics Conference and Exposition (APEC) <31, 2016, Long Beach/Calif.>)
In: APEC 2016, thirty first Annual IEEE Applied Power Electronics Conference and Exposition: March 20-24, 2016, Long Beach Convention Center - Long Beach, California. Piscataway, NJ: IEEE, 2016, pp. 2083-2086
Konferenzbeitrag
2016Mußer, M.; Ambacher, O. (Referent); Manoli, Y. (Betreuer) :
Micro-System: Gallium Nitride RF-Broad-Band High-Power Amplifier
Stuttgart: Fraunhofer Verlag, 2016
(Science for systems 25)
Zugl.: Freiburg, Univ., Diss., 2015
ISBN 978-3-8396-1003-9
Dissertation
2016Reiner, R.; Waltereit, P.; Weiss, B.; Mönch, S.; Wespel, M.; Müller, S.; Quay, R.; Ambacher, O.:
Monolithically-integrated power circuits in high-voltage GaN-on-Si heterojunction technology
(International Seminar on Power Semiconductors (ISPS) <13, 2016, Prague>)
In: Benda, V.: 13th International Seminar on Power Semiconductors, ISPS 2016. CD-ROM: Prague, 31 Aug - 02 Sep 2016. Prague, 2016, 10 pp.
Konferenzbeitrag
2016Feißt, M.; Wilde, J. (Referent); Quay, R. (Referent); Möller, E. (Betreuer) :
Multifunktionaler siliziumbasierter Testchip für die Aufbau- und Verbindungstechnik in der Leistungselektronik
Freiburg, Univ., Master Thesis, 2016
Master Thesis
2016Friesicke, C.; Maier, T.; Brueckner, P.; Quay, R.; Ambacher, O.:
Packaged AlGaN/GaN HEMT power bars with 900 W output power and high PAE at L-Band
(European Microwave Conference (EuMC) <46, 2016, London>)
In: European Microwave Association: 46th European Microwave Conference, EuMC 2016. Proceedings: 4-6 October 2016, London, UK, European Microwave Week (EuMW) 2016. London: Horizon House, 2016, pp. 409-412
Konferenzbeitrag
2016Alsharef, M.; Granzner, R.; Schwierz, F.; Ture, E.; Quay, R.; Ambacher, O.:
Performance of tri-gate AlGaN/GaN HEMTs
(European Solid-State Device Research Conference (ESSDERC) <46, 2016, Lausanne>)
In: Ionescu, A.M. (Ed.): 46th European Solid State Device Research Confernce, ESSDERC 2016: 12-15 September 2016, Lausanne, Switzerland. Piscataway, NJ: IEEE, 2016, pp. 176-179
Konferenzbeitrag
2016Jauss, S.A.; Kilian, S.; Schwaiger, S.; Noll, S.; Daves, W.; Ambacher, O.:
Post drain-stress behavior of AlGaN/GaN-on-Si MIS-HEMTs
(European Solid-State Device Research Conference (ESSDERC) <45, 2015, Graz>)
In: Solid-State Electronics, Vol.125 (2016), pp.125-132
Zeitschriftenaufsatz
2016Feuerschütz, P.; Friesicke, C.; Quay, R.; Jacob, A.F.:
A Q-band power amplifier MMIC using 100 nm AlGaN/GaN HEMT
(European Microwave Integrated Circuits Conference (EuMIC) <11, 2016, London>)
In: European Microwave Association: 11th European Microwave Integrated Circuits Conference, EuMIC 2016. Proceedings: European Microwave Week (EuMW) 2016, 3-4 Oct 2016, London, UK. London: Horizon House, 2016, pp. 305-308
Konferenzbeitrag
2016Mönch, S.; Kallfass, I.; Reiner, R.; Weiss, B.; Waltereit, P.; Quay, R.; Ambacher, O.:
Single-input GaN gate driver based on depletion-mode logic integrated with a 600 V GaN-on-Si power transistor
(Workshop on Wide Bandgap Power Devices and Applications (WiPDA) <4, 2016, Fayetteville/Arkansas>)
In: Institute of Electrical and Electronics Engineers -IEEE-: 4th IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2016: Fayetteville, Arkansas, USA; November 7-9, 2016. Piscataway, NJ: IEEE, 2016, pp. 204-209
Konferenzbeitrag
2016Endruschat, A.; Heckel, T.; Reiner, R.; Waltereit, P.; Quay, R.; Ambacher, O.; März, M.; Eckardt, B.; Frey, L.:
Slew rate control of a 600 V 55 mΩ GaN cascode
(Workshop on Wide Bandgap Power Devices and Applications (WiPDA) <4, 2016, Fayetteville/Arkansas>)
In: Institute of Electrical and Electronics Engineers -IEEE-: 4th IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2016: Fayetteville, Arkansas, USA; November 7-9, 2016. Piscataway, NJ: IEEE, 2016, pp. 334-339
Konferenzbeitrag
2016Weiss, B.; Reiner, R.; Waltereit, P.; Quay, R.; Ambacher, O.; Sepahvand, A.; Maksimovic, D.:
Soft-switching 3 MHz converter based on monolithically integrated half-bridge GaN-chip
(Workshop on Wide Bandgap Power Devices and Applications (WiPDA) <4, 2016, Fayetteville/Arkansas>)
In: Institute of Electrical and Electronics Engineers -IEEE-: 4th IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2016: Fayetteville, Arkansas, USA; November 7-9, 2016. Piscataway, NJ: IEEE, 2016, pp. 215-219
Konferenzbeitrag
2016Klein, K.; Hoene, E.; Reiner, R.; Quay, R.:
Study on packaging and driver integration with GaN switches for fast switching
(International Conference on Integrated Power Electronics Systems (CIPS) <9, 2016, Nuremberg>)
In: Energietechnische Gesellschaft -ETG-: CIPS 2016, 9th International Conference on Integrated Power Electronics Systems. Proceedings. CD-ROM: March, 8 - 10, 2016, Nuremberg/Germany. Berlin: VDE-Verlag, 2016. (ETG Fachbericht 148), 6 pp.
Konferenzbeitrag
2016Bajwa, A.A.; Reiner, R.; Quay, R.; Wilde, J.:
Thermal performance of high-temperature stable die-attachments for GaN HEMTs
(International Conference on Integrated Power Electronics Systems (CIPS) <9, 2016, Nuremberg>)
In: Energietechnische Gesellschaft -ETG-: CIPS 2016, 9th International Conference on Integrated Power Electronics Systems. Proceedings. CD-ROM: March, 8 - 10, 2016, Nuremberg/Germany. Berlin: VDE-Verlag, 2016. (ETG Fachbericht 148), 5 pp.
Konferenzbeitrag
2016Wespel, M.; Polyakov, V.M.; Dammann, M.; Reiner, R.; Waltereit, P.; Quay, R.; Mikulla, M.; Ambacher, O.:
Trapping effects at the drain edge in 600 V GaN-on-Si HEMTs
In: IEEE transactions on electron devices, Vol.63 (2016), No.2, pp.598-605
Zeitschriftenaufsatz
2016Grießer, Jan; Ambacher, O. (Referent); Quay, R. (Referent); Reiner, R. (Betreuer) :
Vergleichende thermische Untersuchungen von Leistungsbauelementen
Freiburg, Univ., Bachelor Thesis, 2016
Bachelor Thesis
Diese Publikationsliste wurde aus der Publikationsdatenbank Fraunhofer-Publica erstellt.