Publikationen des Geschäftsfelds Leistungselektronik

2014

JahrAutor/Titel/QuelleDokumentart
2014Leuther, A.; Tessmann, A.; Doria, P.; Ohlrogge, M.; Seelmann-Eggebert, M.; Massler, H.; Schlechtweg, M.; Ambacher, O.:
20 nm metamorphic HEMT technology for terahertz monolithic integrated circuits
(European Microwave Integrated Circuits Conference (EuMIC) <9, 2014, Rome>)
In: IEEE Microwave Theory and Techniques Society: 9th European Microwave Integrated Circuits Conference, EuMIC 2014. Proceedings: 06-07 October 2014, Italy, Rome, EuMW 2014, European Microwave Week. Piscataway, NJ: IEEE, 2014, pp. 84-87
Konferenzbeitrag
2014Carrubba, V.; Ture, E.; Quay, R.; Raay, F. van; Musser, M.; Ambacher, O.:
Analysis and performance of drain bias "in-dependent" class-J power amplifier
(Asia-Pacific Microwave Conference (APMC) <2014, Sendai>)
In: Institute of Electrical and Electronics Engineers -IEEE-: Asia-Pacific Microwave Conference, APMC 2014. Vol.2: November 4-7, 2014, Sendai, Japan. Piscataway, NJ: IEEE, 2014, pp. 998-1000
Konferenzbeitrag
2014Bajwa, A.A.; Qin, Y.; Wilde, J.; Reiner, R.; Waltereit, P.; Quay, R.:
Assembly and packaging technologies for high-temperature and high-power GaN HEMTs
(Electronic Components and Technology Conference (ECTC) <64, 2014, Orlando/Fla.>)
In: Institute of Electrical and Electronics Engineers -IEEE-: IEEE 64th Electronic Components and Technology Conference, ECTC 2014: 27-30 May 2014, Orlando, Florida, USA. Piscataway, NJ: IEEE, 2014, pp. 2181-2188
Konferenzbeitrag
2014Raay, F. van; Quay, R.; Seelmann-Eggebert, M.; Schwantuschke, D.; Peschel, D.; Schlechtweg, M.; Ambacher, O.:
Automatic extraction of analytical large-signal FET models with parameter estimation by function decomposition
(European Microwave Integrated Circuits Conference (EuMIC) <9, 2014, Rome>)
In: IEEE Microwave Theory and Techniques Society: 9th European Microwave Integrated Circuits Conference, EuMIC 2014. Proceedings: 06-07 October 2014, Italy, Rome, EuMW 2014, European Microwave Week. Piscataway, NJ: IEEE, 2014, pp. 202-205
Konferenzbeitrag
2014Ture, E.; Carrubba, V.; Maroldt, S.; Musser, M.; Walcher, H.; Quay, R.; Ambacher, O.:
Broadband 1.7-2.8 GHz high-efficiency (58%), high-power (43 dBm) class-BJ GaN power amplifier including package engineering
(European Microwave Conference (EuMC) <44, 2014, Rome>)
In: European Microwave Association: 44th European Microwave Conference, EuMC 2014: Held in Roma, Italy on October 5-10, 2014; European Microwave Week, EuMW 2014. London: Horizon House, 2014, pp. 1289-1292
Konferenzbeitrag
2014Ture, E.; Carrubba, V.; Maroldt, S.; Musser, M.; Walcher, H.; Quay, R.; Ambacher, O.:
Broadband 1.7-2.8 GHz high-efficiency (58%), high-power (43 dBm) class-BJ GaN power amplifier Including package engineering
(European Microwave Integrated Circuits Conference (EuMIC) <9, 2014, Rome>)
In: IEEE Microwave Theory and Techniques Society: 9th European Microwave Integrated Circuits Conference, EuMIC 2014. Proceedings: 06-07 October 2014, Italy, Rome, EuMW 2014, European Microwave Week. Piscataway, NJ: IEEE, 2014, pp. 345-348
Konferenzbeitrag
2014Friesicke, C.; Quay, R.; Jacob, A.F.:
Comparison of second-harmonic matching of AlGaN/GaN HEMTs at K-band
(European Microwave Integrated Circuits Conference (EuMIC) <9, 2014, Rome>)
In: IEEE Microwave Theory and Techniques Society: 9th European Microwave Integrated Circuits Conference, EuMIC 2014. Proceedings: 06-07 October 2014, Italy, Rome, EuMW 2014, European Microwave Week. Piscataway, NJ: IEEE, 2014, pp. 400-403
Konferenzbeitrag
2014Baeumler, M.; Polyakov, V.; Wespel, M.; Dammann, M.; Anto, R.; Waltereit, P.; Reiner, R.; Müller, S.; Quay, R.; Mikulla, M.; Wagner, J.; Ambacher, O.:
Evaluation of local SiN(x)/GaN interface trap-density fluctuations in AlGaN/GaN HEMTs by electroluminescence microscopy
(Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE) <38, 2014, Delphi>)
In: Institute of Electronic Structure & Laser, Foundation for Research & Technology, Hellas ? IESL-FORTH-: WOCSDICE-EXMATEC 2014, 38th Workshop on Compound Semiconductor Devices and Integrated Circuits and 12th Expert Evaluation and Control of Compound Semiconductor Materials and Technologies: WOCSDICE - 15th-18th June, EXMATEC - 18th-20th June 2014, Delphi, Greece. Delphi, 2014, 2 pp.
Konferenzbeitrag
2014Kallfass, I.; Eren, G.; Weber, R.; Wagner, S.; Schwantuschke, D.; Quay, R.; Ambacher, O.:
High linearity active GaN-HEMT down-converter MMIC for E-band radar applications
(European Microwave Integrated Circuits Conference (EuMIC) <9, 2014, Rome>)
In: IEEE Microwave Theory and Techniques Society: 9th European Microwave Integrated Circuits Conference, EuMIC 2014. Proceedings: 06-07 October 2014, Italy, Rome, EuMW 2014, European Microwave Week. Piscataway, NJ: IEEE, 2014, pp. 128-131
Konferenzbeitrag
2014Wespel, M.; Baeumler, M.; Polyakov, V.; Dammann, M.; Reiner, R.; Waltereit, P.; Quay, R.; Mikulla, M.; Ambacher, O.:
Influence of surface states on the voltage robustness of AlGaN/GaN HFET power devices
In: Microelectronics reliability, Vol.54 (2014), No.12, pp.2656-2661
Zeitschriftenaufsatz
2014Friesicke, C.; Jacob, A.F.; Quay, R.:
K-band power amplifiers in a 100 nm GaN HEMT microstrip line MMIC technology
(International Conference on Microwaves, Radar and Wireless Communications (MIKON) <20, 2014, Gdansk>)
In: Bikonis, A.: 20th International Conference on Microwaves, Radar and Wireless Communications, MIKON 2014: 16-18 June 2014, Gdansk, Poland. Piscataway, NJ: IEEE, 2014, 4 pp.
Konferenzbeitrag
2014Mikulla, M.; Storm, S.; Henelius, N.; Poisson, M.-A.; Zanoni, E.; Kuball, M.:
Manga: Manufacturable GaN SiC substrates and GaN epi wafer supply chain
(European Microwave Integrated Circuits Conference (EuMIC) <9, 2014, Rome>)
In: IEEE Microwave Theory and Techniques Society: 9th European Microwave Integrated Circuits Conference, EuMIC 2014. Proceedings: 06-07 October 2014, Italy, Rome, EuMW 2014, European Microwave Week. Piscataway, NJ: IEEE, 2014, pp. 221-224
Konferenzbeitrag
2014Dammann, M.; Baeumler, M.; Anto, R.; Konstanzer, H.; Brueckner, P.; Polyakov, V.; Wespel, M.; Müller, S.; Schwantuschke, D.; Maroldt, S.; Quay, R.; Mikulla, M.; Ambacher, O.:
Reliability of GaN HEMTs with a 100 nm gate length under DC-stress tests
(International Integrated Reliability Workshop (IIRW) <2014, South Lake Tahoe/Calif.>)
In: Institute of Electrical and Electronics Engineers -IEEE-: IEEE International Integrated Reliability Workshop, IIRW 2014: Final Report, 12 - 16 October 2014, South Lake Tahoe, California. Piscataway, NJ: IEEE, 2014, pp. 115-118
Konferenzbeitrag
2014Cäsar, M.; Ambacher, O. (Betreuer); Schwierz, F. (Betreuer) :
Reliability studies of GaN high electron mobility transistors
Freiburg/Brsg., Univ., Diss., 2014
Dissertation
2014Mönch, S.; Quay, R. (Betreuer); Reiner, R. (Betreuer) :
Robust gate driver circuit for monolithic integration with GaN-on-Si 600 V power transistor
Stuttgart, Univ., Master Thesis, 2014
Master Thesis
Diese Publikationsliste wurde aus der Publikationsdatenbank Fraunhofer-Publica erstellt.