Fraunhofer Institute for Applied Solid State Physics IAFResearch and Development in Electronics
Fraunhofer IAF researchers develop materials, devices, modules, and sub-systems for a wide range of applications in high frequency electronics and power electronics.
In the field of high frequency electronics, Fraunhofer IAF researchers work on metamorphic IC technology based on InGaAs mHEMTs including gate lengths of 50 nm, 35 nm, or 20 nm. This makes it possible to develop extremely low-noise and broadband applications at room temperature, but also under cryogenic conditions (e.g. for quantum computing), with cut-off frequencies of up to 1 THz.
In power electronics, we focus on GaN-based devices, circuits, and modules for highest energy efficiency and maximum voltage being used in electromobility, air conditioning, and information technology applications. Furthermore, Fraunhofer IAF researchers work on novel lateral and vertical 1200 V devices as well as monolithic and heterogeneous integration.
CMOS circuit design for AI and AI-driven design processes
At the Artificial Intelligence Innovation Park (IPAI) in Heilbronn, Fraunhofer IAF is advancing AI-based CMOS circuit design. The focus is on CMOS chip design for AI applications and AI-driven design processes in order to develop powerful, energy-efficient AI chips and sustainably strengthen the microelectronics ecosystem in Baden-Württemberg.
Researchers at Fraunhofer IAF are developing AI-supported design processes that automate complex CMOS circuits, shorten design times, and increase efficiency, reliability, and security. At the same time, new chip architectures for AI applications are emerging – from edge AI and image processing to safety-critical applications in mobility, robotics, and aerospace. This benefits industry, small and medium-sized enterprises, and start-ups in particular, which are gaining easier access to AI-based CMOS chip design through the growing chip ecosystem in Heilbronn.
