GaN High-Frequency Electronics

Robust and efficient GaN components for maximum performance and efficiency at high frequencies  

Global networking traffic is increasing, the volume of data transferred is growing and industrial production processes are becoming ever more complex. In order to meet the constantly growing requirements, ever more powerful and efficient high-frequency electronic components are needed to enable reliable, high-performance connections — both on earth and in space. Based on the III-V compound semiconductor GaN, Fraunhofer IAF develops high-frequency electronics for communication, radar and test and measurement systems at high operating voltages and frequencies along the entire value chain. It sets global standards in terms of power density, efficiency and robustness.

GaN HEMT MMICs up to 200 GHz — from design to system

The extensive know-how of the researchers and the comprehensive research infrastructure at Fraunhofer IAF enable the requirement-specific realization of GaN high-frequency electronics as well as corresponding services at all production stages: from circuit design to material growth, processing (also on multi-project wafer runs) and characterization of integrated circuits (ICs) based on HEMTs to the construction of modules and (sub-)systems. 

Partners and customers from industry and science have access to a self-developed process family for GaN high-frequency technologies with gate lengths of 500, 150, 100 and 70 nm (GaN50X–GaN07), which enables the reliable production of MMICs with frequencies in the microwave range (mmW, here: up to 200 GHz) — even in small series. These are used individually or highly integrated as low-noise amplifiers, power amplifiers, high-power amplifiers or as complete front-end modules (FEMs).