Portfolio of GaN High-Frequency Electronics

Substrates

• Silicon carbide (SiC)
• Aluminum nitride (AlN)
• Gallium nitride (GaN)

Epitaxy

• Gallium nitride (GaN)
• Aluminum gallium nitride (AlGaN)

Process modules

• Ohm contacts
• Gate modules
• Wafer backside processing
• Process chains according to specifications

Process lines

• GaN07
  70 nm, up to 170 Ghz, MMIC (in development)
• GaN10
  100 nm, > 100 GHz, MMIC, power density 2 W/mm, N_F = 2 dB at 80 GHz
• GaN15
  150 nm, up to 75 GHz, MMIC, power density 4.5 W/mm, N_Fmin = 1.5 dB at 40 GHz
• GaN50X
  500 nm, 1–10 GHz, power transistor, 100 V_DS, power density up to 15 W/mm, PAE > 50 %

• Simulation-based design and realization of HEMT MMICs from L-band to D-band
  • In-house production of mask sets
  • Integrated passive components 
  • Gate definition using electron beam lithography
• Development and production of demonstrators, pilot lines and small series
• Provision of multi-project wafer runs

Module manufacturing

• Power amplifiers (PA) and high power amplifiers (HPA)
• Low-noise amplifiers (LNA)
• Front-end modules
• PCB modules
• Waveguide modules
• Hybrid modules
• Split-block modules

• Power measurement with active loadpull up to 170 GHz
• Reliability measurements: On-wafer and packaged
• S-parameters up to 1 THz
• S-parameter and power measurement in protected device (for 100 V devices)
• Pulsed-IV for trapping characterization