Photodetectors at Fraunhofer IAF

Infrared and UV-C photodetectors

Making the invisible visible and using new measurement technologies

Fraunhofer IAF develops components and manufacturing processes for high-performance infrared and UV-C photodetectors.

Infrared detectors for SWIR and MWIR

  • SWIR (≤ 1.7 µm) - InGaAs/InP-SPADs
    • Single photon detection (e.g. for LiDAR and quantum key distribution at wavelengths around 15xx nm)
  • MWIR (3–5 µm) to eSWIR (≤ 2.6 µm) - Ga-free type II superlattice
    • High operating temperature (e.g. for SWAP-C-optimized, mono- and bispectral thermal imaging devices with the highest spatial resolution)

Detectors for solar-blind UV-C

  • Sensitivity ≤ 280 nm with high out-of-band suppression
  • Detection of very weak signals (a few tens of photons per pulse)
    • Application: Gas sensor technology (e.g. molecular LiDAR for H2)

Detector Applications

  • Energy technology: Sensors for hydrogen gas analysis and leak testing
  • Security: CO2 detection and thermographic imaging for reconnaissance and monitoring
  • Mobility and Smart Factory: 15xx nm SPADs for LiDAR in autonomous systems
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Offer for Customers and Partners

Epitaxy, processing, characterization, Flip-chip hybridization

Multiwafer molecular beam epitaxy

  • Vertical design and modeling of antimonide and phosphide detector structures
    • MBE growth on commercial substrate
    • 4x100 mm or 5×3’‘
  • Comprehensive characterization of crystal quality
    • e.g. charge carrier lifetime
  • Electro-optical characterization using rapid process
    • e.g. dark current, cut-off wavelength
Fraunhofer IAF has a high-performance clean room that includes equipment for molecular beam epitaxy. MBE is used to grow extremely thin single-crystal layers from starting materials such as aluminum, gallium, or indium.

Detector processing for small series production

  • Complete chain for front and back side processing of single element, line and matrix detectors
  • Manufacturing processes up to TRL 8
  • Module integration
  • Large-format focal plane arrays
    • Galvanically indium bumps
    • Flip-chip hybridization with ROIC
    • Electro-optical characterization
Close up of a module
© Fraunhofer IAF
Fraunhofer IAF develops extremely sensitive infrared detectors that detect even the weakest signals under the most adverse conditions and thus offer decisive advantages when used in the fields of environmental sensing, autonomous mobility, Industry 4.0 and quantum communication.
 

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