Fraunhofer Institute for Applied Solid State Physics IAF
Digitalization and the required key technologies are a significant part of the answer to the various enormous challenges today’s society faces. The most important prerequisite for a digital revolution are cost-efficient electronic devices and systems that allow for big-data applications, wireless gigabit communications (such as 5G mobile radio) or energy-efficient data centers, since electrical energy is the essential resource.
Therefore, the main objective of UltimateGaN is to ensure Europe’s leading position in regard of power semiconductors and power HF applications, by developing the next groundbreaking generation of GaN technology. Thereby, the partners of the project aim for the provision of cost-effective GaN technology, which is realized on a high-volume CMOS-line and industry-standard 200 mm GaN-on-silicon wafers. Fraunhofer IAF partakes with its expertise at the development of a lateral »GaN-on-Si« technology with a frequency up to 4.5 and 28 GHz. This includes device design via simulations, innovative epitaxy and technology experiments, extensive reliability studies and characterization and modelling of transistors. The extracted models will be used for the design of an integrated 28 GHz power transistor for 5G applications.
