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Researchers at Fraunhofer IAF have developed a broadband distributed amplifier chip based on the institute’s proprietary InGaAs-on-Si HEMT technology. It achieves a gain of 11 ± 2 dB between 4 and 420 GHz and is ideally suited for use in data centers, measurement systems and sensors. Along with other new developments in the field of high-frequency electronics, Fraunhofer IAF will present the chip from October 4 to 9, 2026, at European Microwave Week in London (Booth B35).

GaN power electronics combines performance, efficiency, and cost advantages and plays a central technological role in the energy transition. At PCIM Expo & Conference 2026 in Nuremberg from June 9 to 11, Fraunhofer IAF will present the latest developments in the field of GaN power electronics—with the highlight being a demonstrator of a bidirectional, single-phase 800 V DC charger for electric vehicles. It was developed by project partner Ambibox as part of the BMWE project GaN4EmoBiL and incorporates a 1200 V GaN module from Fraunhofer IAF.