EvaSolar II - Evaluation of AlGaN avalanche photodiodes for single photon detection in solar-blind UV

UV detectors based on the semiconductor material aluminum gallium nitride (AlGaN) display many promising properties; for example, the sensitive spectral region can be tuned by adjusting the composition. The Fraunhofer IAF is working on the development of high-sensitivity avalanche photodiodes with the aim of using them to detect extremely weak signals up to single photon detection in Geiger mode. The project work is focused on the solar-blind ultraviolet range below 280 nm, which is of particular interest in warning sensor applications.

Photocurrent measurement on AlGaN-based UV detectors.
Processed AlGaN avalanche photodiodes on 1" AlN substrate.

Project title EvaSolar II − Evaluation of AlGaN avalanche photodiodes for single photon detection in solar-blind UV  
Project duration 2015 − 2017  
Funding source Federal Ministry of Defense  
Project manager Dr. Robert Rehm  
Goals
  • Development of AlGaN avalanche photodiodes (APDs) for the solar-blind UV < 280 nm
  • Design and simulation of suitable layer structures
  • Epitaxy of AlGaN layer structures on grid-matched Saphir and AlN substrates
  • Evaluation of electrical-optical properties in linear and Geiger mode
 
Publications Improved AlGaN p-i-n photodetectors for monitoring of ultraviolet radiation. Albrecht, B.; Kopta, S.; John, O.; Rütters, M.; Kunzer, M.; Driad, R.; Marenco, N.; Köhler, K.; Walther, M.; Ambacher, O. In IEEE Journal of Selected Topics in Quantum Electronics, Vol. 20, 2014, 380250