Fraunhofer Institute for Applied Solid State Physics IAF
Fraunhofer Institute for Applied Solid State Physics IAF

Ferroelectricity in ScAlN - SALSA

Si wafer with AlScN-based surface acoustic wave resonator structures fabricated at Fraunhofer IAF.
© Fraunhofer IAF
Si wafer with AlScN-based surface acoustic wave resonator structures fabricated at Fraunhofer IAF.

In spring 2018, researchers at CAU Kiel and Fraunhofer ISIT discovered that the polarization of scandium aluminum nitride (ScAlN) can be ferroelectrically switched at high scandium contents. This surprising discovery of the first III-V semiconductor-based ferroelectric can be considered a scientific breakthrough and promises a disruptive innovation potential for various applications in micro- and optoelectronics and microsystems technology.

The primary goal of the proposed research project is to expand the fundamental understanding of this new ferroelectric III-V semiconductor. Central questions concern the scaling of ferroelectricity down to ultra-thin (a few nm) layers, the influence of the substrate as well as the dynamics up to the MHz range and the reliability of the switching process. In addition, the project aims to evaluate and demonstrate the innovation potential using two selected components, a multi-layer ScAlN-MEMS loudspeaker and a ferroelectric High-Electron-Mobility Transistor.

PROJECT TITLE

SALSA – Ferroelectricity in ScAlN: From the discovery of the effect to disruptive devices

 

DURATION

2020 – 2022

FUNDING SOURCE

Federal Ministry for Education and Research

COORDINATOR

Fraunhofer ISIT

OBJECTIVES

  • Expand the fundamental understanding of this new ferroelectric III-V semiconductor.
  • Evaluation and demonstration of the innovation potential using two selected devices: a multilayer ScAlN MEMS loudspeaker and a ferroelectric high-electron mobility transistor.