Project MIIMOSYS aims for the worldwide first demonstration of a heterogeneous on-chip integration of GaN transistors onto silicon CMOS control electronics at system level via micro-transfer-printing (μTP). The flexible integration of power-efficient GaN transistors in different voltage and power classes onto highly integrated silicon CMOS control circuits in different technologies at wafer level, allows the first combination of the advantages of both semiconductor materials and technologies within one single chip. This opens up completely new possibilities, but at the same time also challenges, for the system design in the field of power electronics.
Project MIIMOSYS contributes significantly to the micro and nano electronics and is a core component of the high-tech strategy of the German federal government regarding future electronic systems with improved functionality, energy efficiency and reliability, coupled with improved integration density.