HyTeck - Hybrid integration platform for reliable high-frequency circuits

In the project "HyTeck" SiGe BiCMOS and GaN technologies are integrated into FOWLP systems.
© Rhode & Schwarz
In the project "HyTeck" SiGe BiCMOS and GaN technologies are integrated into FOWLP systems.

The project aims at the creation of a technology platform for the hybrid integration of silicon-germanium (SiGe) BiCMOS and gallium-nitride (GaN) semiconductor technologies for high-frequency applications up to 67 GHz for metrology and communications. By combining these two technologies at the wafer level using Fan-out Wafer Lever Packaging (FOWLP) technology, integrated circuits can become particularly powerful. In addition to the challenging technological goals, the development of a design environment is also aimed at in order to enable cost-effective production even in small quantities and thus a broad use.

 

PROJECT TITLE

HyTeck − Hybrid integration platform for reliable high-frequency circuits

 

PROJECT DURATION

2017 − 2020

FUNDING SOURCE

Federal Ministry of Education and Research - TechSys

OBJECTIVES

  • Fan-out Wafer Level Packaging Technology
  • Hybrid integration of Si- and GaN-based high-frequency circuits