Gallium Nitride (GaN) based Amplifiers for 5G

The fifth generation (5G) communications technologies will provide a mobile internet access for various applications in the future: Reaching from innumerable low data rate sensors, as part of the »Internet of Things«, to individual terminals with high data rates, which would be required for video streaming, for example.

In order to realize the required high data rates, frequency bands in millimeter wave range (>24GHz) will be used, offering a bandwidth 10 times higher than currently available frequency bands (< 6 GHz). The experts aim at improving the available output power and the energy efficiency of the network infrastructure of these innovative frequency bands, through the use of advanced gallium nitride (GaN) based amplifiers.

Project Title 5G-GaN2 – 5G  base stations GaN components and Circuits for RF transceivers -2
Project duration 2018 - 2021
Project coordinator Philippe AUXEMERY | UMS Semiconductors
Funding source EU | ECSEL Research and Innovation Actions
Project partner
  • UMS Semiconductor, France
  • CEA LETI, France
  • III-V Lab, France
  • Thales C, France
  • Ericsson A, Sweden
  • UMS GmbH, Germany
  • XFAB Dresden, Germany
  • Sencio, Netherlands
  • University of Erlangen, Germany
  • SweGaN AB, Sweden
  • MEC, Italy
  • University of Padova, Italy
  • Funcoats, Luxembourg
  • University College Dublin, Ireland
  • Benetel, Ireland
  • Slovak University of Technology in Bratislava, Slovakia
  • TESAT Spacecom GmbH & Co. KG, Germany
Project manager Dr. Dirk Schwantuschke
Goals
  • Development of GaN based technologies and amplifier circuits, optionally on cost-efficient Si or high-performance SiC substrates.
  • Realization of various demonstrators at 28, 38 and 80 GHz.

Further information

You can find further information on the project »5G GaN2« at the  official webpage