Power Electronics

© Fraunhofer IAF

High power circuits and modules based on gallium nitride

The focus within our business unit »power electronics« lies on power transistors and power circuits based on the III-V compound semiconductor Gallium Nitride (GaN). GaN based power electronics feature a higher efficiency and an increased power handling capability compared to classical III-V heterostructure devices or silicon-based electronics. In mobile communication, GaN-based amplifiers enable data transmission at a rate of up to 10 Gbit/s while saving energy at the same time – a prerequisite for future 5G and 6G mobile communication networks. Furthermore, GaN allows to realize RF and microwave monolithic integrated circuits (MMICs) operating at frequencies up to 200 GHz with superior efficiency, bandwidths, linearity and noise figures, combined with a small form factor and high robustness.

In the field of energy conversion, GaN-based power electronics offer the advantage of higher switching frequencies than silicon or silicon carbide based solutions. This translates directly into superior conversion efficiency for modules with a reduced form factor, and thus energy and materials savings. This makes GaN power electronics very attractive for use in electric vehicles, industrial automation as well as power supplies for e.g. server clusters enabling big data. New research is focused on the fabrication of vertical devices on GaN and silicon substrates for power conversion.

Our offering

  • Realization of broadband amplifier MMICs and modules covering the 0-to-40 GHz range
  • Housed high power amplifiers delivering up to 1 kW
  • Hetero-integrated »GaN-on-SiC« and »GaN-on-Si« MMICs
  • MMICs and modules for P2P communication at 28 GHz, 39 GHz, 71 – 84 GHz and 94 GHz
  • prototyping and small series production of GaN MMICs with gate lengths of 0.5 µm, 0.25 µm and 100 nm
  • RF power generation up to 200 GHz
  • Assessment of packaging and reliability of GaN integrated circuits
  • »GaN-on-Si epitaxy« on up to 8” wafers


Scientific publications

YearTitle/AuthorDocument Type
2017110 GHz on-wafer measurement comparison on alumina substrate
Probst, Thorsten; Doerner, Ralf; Ohlrogge, Matthias; Lozar, Roger; Arz, Uwe
Conference Paper
2017Adsorption and desorption of hydrogen at nonpolar GaN(1¯100) surfaces: Kinetics and impact on surface vibrational and electronic properties
Lymperakis, Liverios; Neugebauer, Jörg; Himmerlich, Marcel; Krischok, Stefan; Rink, Michael; Kröger, Jörg; Polyakov, Vladimir
Journal Article
2017AlN/GaN HEMTs grown by MBE and MOCVD: Impact of Al distribution
Godejohann, Birte-Julia; Ture, Erdin; Müller, Stefan; Prescher, Mario; Kirste, Lutz; Aidam, Rolf; Polyakov, Vladimir; Brueckner, Peter; Breuer, Steffen; Köhler, Klaus; Quay, Rüdiger; Ambacher, O.
Journal Article
2017Anisotropic optical constants, birefringence, and dichroism of wurtzite GaN between 0.6 eV and 6 eV
Shokhovets, Sviatoslav; Kirste, Lutz; Leach, Jacob H.; Krischok, S.; Himmerlich, Marcel
Journal Article
2017Demonstration of an RF front-end based on GaN HEMT technology
Ture, Erdin; Musser, Markus; Hülsmann, Axel; Quay, Rüdiger; Ambacher, Oliver
Conference Paper
2017Design and characterization of highly-efficient GaN-HEMTs for power applications
Reiner, Richard; Ambacher, Oliver (Referent); Kallfass, Ingmar (Referent); Quay, Rüdiger (Betreuer)
2017Design, realization, and evaluation of a Riemann pump in GaN technology
Weiß, Markus; Friesicke, Christian; Metzger, Thomas; Schmidhammer, Edgar; Quay, Rüdiger; Ambacher, Oliver
Journal Article
2017E-band downlink wireless data transmission for future satellite communication
Harati, Parisa; Rosello, Enoc; Dan, Iulia; Bammidi, E.R.; Eisenbeis, Jörg; Tessmann, Axel; Schwantuschke, Dirk; Henneberger, Ralf; Kallfass, Ingmar
Conference Paper
2017Effect of substrate termination on switching loss and switching time using 600 V GaN-on-Si HEMTs with integrated gate driver in half-bridges
Mönch, Stefan; Reiner, Richard; Weiss, Beatrix; Waltereit, Patrick; Quay, Rüdiger; Ambacher, Oliver; Kallfass, Ingmar
Conference Paper
2017Enhanced GaN HEMT technology for E-band power amplifier MMICs with 1W output power
Schwantuschke, Dirk; Brueckner, Peter; Wagner, Sandrine; Dammann, Michael; Mikulla, Michael; Quay, Rüdiger
Conference Paper
2017First demonstration of w-band tri-gate GaN-HEMT power amplifier MMIC with 30 dBm output power
Ture, Erdin; Brueckner, Peter; Alsharef, Mohamed; Granzner, Ralf; Schwierz, Frank; Quay, Rüdiger; Ambacher, Oliver
Conference Paper
2017GaN-based Tri-gate high electron mobility transistors
Ture, Erdin; Ambacher, Oliver (Referent); Bolognesi, Colombo R. (Referent); Palacios, Tomas (Referent)
2017Hetero-integrated GaN MMICs: Hot Islands in a (Silicon) Ocean...
Quay, Rüdiger; Brueckner, Peter; Tessmann, Axel; Ture, Erdin; Schwantuschke, Dirk; Dammann, Michael; Waltereit, Patrick
Conference Paper
2017Investigation of GaN-HEMTs in reverse conduction
Reiner, Richard; Waltereit, Patrick; Weiss, Beatrix; Quay, Rüdiger; Ambacher, Oliver
Conference Paper
2017Investigations of efficient active antenna power amplifier modules for 5G applications under beam control mismatch
Gashi, Bersant; Ambacher, Oliver (Referent); Quay, Rüdiger (Referent); Krause, Sebastian (Betreuer)
Master Thesis
2017Monolithically integrated GaN-on-Si power circuits
Reiner, Richard; Waltereit, Patrick; Weiss, Beatrix; Mönch, Stefan; Quay, Rüdiger; Ambacher, Oliver
Conference Paper
2017Multi-gigabit high-range fixed wireless links at high millimeterwave carrier frequencies
Kallfass, Ingmar; Antes, Jochen; Tessmann, Axel; Zwick, Thomas; Henneberger, Ralf
Conference Paper
2017New concept to control the gain of GaN-cascodes in broadband power amplifiers
Huber, Thomas; Quay, Rüdiger; Bösch, Wolfgang
Conference Paper
2017Noise degradation of cascodes in broadband power amplifiers
Huber, Thomas; Quay, Rüdiger; Bösch, Wolfgang
Conference Paper
2017Operation of PCB-embedded, high-voltage multilevel-converter GaN-IC
Weiss, Beatrix; Reiner, Richard; Waltereit, Patrick; Quay, Rüdiger; Ambacher, Oliver
Conference Paper
2017Radiation aspects and performance of GaN power converters and RFICs for airborne and space applications
Quay, Rüdiger; Brueckner, Peter; Reiner, Richard; Schwantuschke, Dirk; Waltereit, Patrick
Conference Paper
2017Reliability of 100 nm AlGaN/GaN HEMTs for mm-wave applications
Dammann, Michael; Baeumler, Martina; Polyakov, Vladimir M.; Brueckner, Peter; Konstanzer, Helmer; Quay, Rüdiger; Mikulla, Michael; Graff, Andreas; Simon-Najasek, M.
Journal Article
2017The role of charge trapping in AlGaN/GaN-on-Si HEMT based power switches
Wespel, Matthias; Wagner, Joachim; Lausen, G.; Ambacher, O.; Schwierz, F.
2017A sequential power amplifier at 3.5 GHz for 5G applications
Neininger, Philipp; Friesicke, Christian; Krause, Sebastian; Meder, Dirk; Lozar, Roger; Merkle, Thomas; Quay, Rüdiger; Zwick, Thomas
Conference Paper
2017Substrate biasing effects in a high-voltage, monolithically-integrated half-bridge GaN-chip
Weiss, Beatrix; Reiner, Richard; Polyakov, Vladimir M.; Waltereit, Patrick; Quay, Rüdiger; Ambacher, Oliver; Maksimovic, Dragan
Conference Paper
2017Thermal stability and failure mechanism of schottky gate AlGaN/GaN HEMTs
Mocanu, Manuela; Unger, Christian; Pfost, Martin; Waltereit, Patrick; Reiner, Richard
Journal Article
2017Transfer of AlGaN/GaN RF-devices onto diamond substrates via van der Waals bonding
Gerrer, Thomas; Cimalla, Volker; Waltereit, Patrick; Müller, Stefan; Benkhelifa, Fouad; Maier, Thomas; Czap, Heiko; Nebel, Christoph E.; Quay, Rüdiger
Conference Paper
This publication list has been generated from the publication database Fraunhofer-Publica.
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