High power circuits and modules based on gallium nitride
The focus within our business unit »power electronics« lies on power transistors and power circuits based on the III-V compound semiconductor Gallium Nitride (GaN). GaN based power electronics feature a higher efficiency and an increased power handling capability compared to classical III-V heterostructure devices or silicon-based electronics. In mobile communication, GaN-based amplifiers enable data transmission at a rate of up to 10 Gbit/s while saving energy at the same time – a prerequisite for future 5G and 6G mobile communication networks. Furthermore, GaN allows to realize RF and microwave monolithic integrated circuits (MMICs) operating at frequencies up to 200 GHz with superior efficiency, bandwidths, linearity and noise figures, combined with a small form factor and high robustness.
In the field of energy conversion, GaN-based power electronics offer the advantage of higher switching frequencies than silicon or silicon carbide based solutions. This translates directly into superior conversion efficiency for modules with a reduced form factor, and thus energy and materials savings. This makes GaN power electronics very attractive for use in electric vehicles, industrial automation as well as power supplies for e.g. server clusters enabling big data. New research is focused on the fabrication of vertical devices on GaN and silicon substrates for power conversion.
- Realization of broadband amplifier MMICs and modules covering the 0-to-40 GHz range
- Housed high power amplifiers delivering up to 1 kW
- Hetero-integrated »GaN-on-SiC« and »GaN-on-Si« MMICs
- MMICs and modules for P2P communication at 28 GHz, 39 GHz, 71 – 84 GHz and 94 GHz
- prototyping and small series production of GaN MMICs with gate lengths of 0.5 µm, 0.25 µm and 100 nm
- RF power generation up to 200 GHz
- Assessment of packaging and reliability of GaN integrated circuits
- »GaN-on-Si epitaxy« on up to 8” wafers