Electronic circuits

Fraunhofer IAF conducts research on innovative high frequency electronics as well as power electronics.
 

High frequency electronics cover the range up to 850 GHz. Such high frequencies and bandwidths are particularly useful for high precision sensors. This is due to the fact that the millimeter-waves used in these systems penetrate dust, fog, snow and clothes.

In the field of power electronics, researchers at IAF are concerned with the development of high performance amplifiers and circuits based on gallium nitride (GaN). These allow for particularly high data rates in mobile-to-mobile data transfer (up to 10 Gbit/s). These performances are essential for future cellular networks – 5G and 6G. At the same time, our technology is highly energy-efficient.

In addition, we work on developing new materials, for example high quality graphene layers and flakes as well as AIScN for piezoelectric filters.

What we offer

 

High Frequency Electronics           Power Electronics Measurement FACILITIES
  • High frequency circuits and modules
  • High frequency filters
  • MMIC design
  • Device modeling
  • Prototype and small-batch production of MMICs
  • Packaging of circuits in modules
  • Realization of HF broadband amplifier MMICs and modules from 0 to 40 GHz
  • High performance amplifiers from 1 kW; in casing and as a module
  • Heterointegrated “GaN-on-SiC” and “GaN-on-Si” MMICs
  • MMICs and modules for directional radio at 28 GHz, 39 GHz, 71-84 GHz and 94 GHz
  • Prototypes and small-batch production of GaN MMICs with a gate length around 0.5 µm, 0.25 µm and 100 nm
  • Power generation up to 200 GHz
  • Evaluation of packaging technology and reliability of GaN circuits
  • 8 inch “GaN-on-Si” epitaxy
  • S-parameter up to 1.1 THz
  • Noise parameter up to 50 GHz
  • Noise figure up to 750 GHz
  • Performance up to 300 GHz
  • Intermodulation up to 50 GHz
  • DC and HF measuring at cryogenic temperatures
  • Endurance test at DC and HF

What's new at IAF?

A brief overview

© Fraunhofer IAF

Integrated GaN power cicuits

Fraunhofer IAF is developing efficient power transistors and circuits on large-scale, low-cost Si substrates.

© Fraunhofer IAF

Multi-project wafer runs for customers

Based on its epitaxial and technological capabilities, Fraunhofer IAF offers electronic multi-project wafer runs (MPW) and complete masks processings for external customers.

© Fraunhofer IAF

Energy-efficient voltage converters

The semiconductor gallium nitride increases efficiency and saves a considerable amount of energy.

© Fraunhofer IAF, Photobank – Fotolia.com

Data transport for industry 4.0

Currently, Fraunhofer IAF develops adaptive wireless point-to-point terahertz communication systems for interiors.

© Fraunhofer IAF

Radar for sensing and material testing

The frequency range of 75 –110 GHz (W-band) is ideal for radars to detect small objects from a distance, even if visibility is restricted.

© Bundeswehr

Distance radar for helicopters

During difficult landing maneuvers in snow (white-out effect) or in very dusty regions (brown-out effect), millimeter wave sensors help helicopter pilots to land safely.