Publications of the business unit Power Electronics

2020

YearAuthor/Title/SourceDocument Type
2020Mönch, Stefan; Reiner, Richard; Waltereit, Patrick; Hückelheim, Jan; Meder, Dirk; Quay, Rüdiger; Ambacher, Oliver; Kallfass, Ingmar:
A 600V GaN-on-Si power IC with integrated gate driver, freewheeling diode, temperature and current sensors and auxiliary devices
(International Conference on Integrated Power Electronics Systems (CIPS) <11, 2020, Berlin>)
In: Verband Deutscher Elektrotechniker e.V. -VDE-, Berlin: CIPS 2020, 11th International Conference on Integrated Power Electronics Systems. Proceedings: March, 24 - 26, 2020, Berlin, Germany; CD-ROM. Berlin: VDE-Verlag, 2020. (ETG-Fachbericht 161), pp. 69-74
Conference Paper
2020Albahrani, Sayed Ali; Heuken, Lars; Schwantuschke, Dirk; Gneiting, Thomas; Burghartz, Joachim N.; Khandelwal, Sourabh:
Consistent surface-potential-based modeling of drain and gate currents in AlGaN/GaN HEMTs
In: IEEE transactions on electron devices, Vol.67 (2020), No.2, pp.455-462
Journal Article
2020Ding, Anli; Kirste, Lutz; Lu, Yuan; Driad, Rachid; Kurz, Nicolas; Lebedev, Vadim; Christoph, Tim; Feil, Niclas M.; Lozar, Roger; Metzger, Thomas; Ambacher, Oliver; Zukauskaite, Agne:
Enhanced electromechanical coupling in SAW resonators based on sputtered non-polar Al₀.₇₇Sc₀.₂₃N (1120) thin films
In: Applied Physics Letters, Vol.116 (2020), No.10, Art. 101903, 6 pp.
Journal Article
2020Leone, Stefano; Fornari, Roberto; Bosi, Matteo; Montedoro, Vicenzo; Kirste, Lutz; Doering, Philipp; Benkhelifa, Fouad; Prescher, Mario; Manz, Christian; Polyakov, Vladimir M.; Ambacher, Oliver:
Expitaxial growth of GaN/Ga2O3 and Ga2O3/GaN heterostructures for novel high electron mobility transistors
In: Diamond and Related Materials, Vol.534 (2020), Art. 125511, 6 pp.
Journal Article
2020Albahrani, Sayed Ali; Mahajan, Dhawal; Kargazzi, Saleh; Schwantuschke, Dirk; Gneiting, Thomas; Senesky, Debbie G.; Khandelwal, Sourabh:
Extreme temperature modeling of AlGaN/GaN HEMTs
In: IEEE transactions on electron devices, Vol.67 (2020), No.2, pp.430-437
Journal Article
2020Leone, Stefano; Ligl, Jana; Manz, Christian; Kirste, Lutz; Fuchs, Theo; Menner, Hanspeter; Prescher, Mario; Wiegert, Joachim; Zukauskaite, Agne; Quay, Rüdiger; Ambacher, Oliver:
Metal-organic chemical vapor deposition of aluminum scandium nitride
In: Physica status solidi. Rapid research letters, Vol.14 (2020), No.1, Art. 1900535, 6 pp.
Journal Article
2020Basler, Michael; Mönch, Stefan; Reiner, Richard; Waltereit, Patrick; Quay, Rüdiger; Kallfass, Ingmar; Ambacher, Oliver:
Monolithic integration of inductive components in a GaN-on-Si technology
(International Conference on Integrated Power Electronics Systems (CIPS) <11, 2020, Berlin>)
In: Verband Deutscher Elektrotechniker e.V. -VDE-, Berlin: CIPS 2020, 11th International Conference on Integrated Power Electronics Systems. Proceedings: March, 24 - 26, 2020, Berlin, Germany; CD-ROM. Berlin: VDE-Verlag, 2020. (ETG-Fachbericht 161), pp. 63-68
Conference Paper
2020Leone, Stefano; Brueckner, Peter; Kirste, Lutz; Doering, Philipp; Fuchs, Theo; Müller, Stefan; Prescher, Mario; Quay, Rüdiger; Ambacher, Oliver:
Optimization of metal-organic chemical vapor deposition regrown n-GaN
In: Physica status solidi. B, Vol.257 (2020), No.3, Art. 1900436, 8 pp.
Journal Article
2020Neininger, Philipp; Amirpour, Raul; John, Laurenz; Friesicke, Christian; Quay, Rüdiger; Zwick, Thomas:
A phase shifter with integrated PA MMIC for Ka-Band frequencies
(German Microwave Conference (GeMiC) <2020, Cottbus>)
In: Verband Deutscher Elektrotechniker e.V. -VDE-, Berlin: German Microwave Conference, GeMiC 2020: March 09-11, 2020, Cottbus, Germany. Piscataway, NJ: IEEE, 2020, pp. 13-16
Conference Paper
2020Mahajan, Dhawal; Albahrani, Sayed Ali; Sodhi, Raj; Eguchi, Takashi; Khandelwal, Sourabh:
Physics-oriented device model for packaged GaN devices
In: IEEE transactions on power electronics, Vol.35 (2020), No.6, pp.6332-6339
Journal Article
This publication list has been generated from the publication database Fraunhofer-Publica.