Publications of the business unit Power Electronics

2020

YearAuthor/Title/SourceDocument Type
2020Mönch, Stefan; Reiner, Richard; Waltereit, Patrick; Müller, Stefan; Quay, Rüdiger; Ambacher, Oliver; Kallfass, Ingmar:
A 600 V p-GaN gate HEMT with intrinsic freewheeling schottky-diode in a GaN power IC with bootstrapped driver and sensors
(International Symposium on Power Semiconductor Devices and ICs (ISPSD) <32, 2020, Online>)
In: Institute of Electrical and Electronics Engineers -IEEE-: 32nd International Symposium on Power Semiconductor Devices and ICs, ISPSD 2020. Proceedings: September 13-18, 2020, Vienna, Austria, Virtual Conference. Piscataway, NJ: IEEE, 2020, pp. 254-257
Conference Paper
2020Mönch, Stefan; Reiner, Richard; Waltereit, Patrick; Hückelheim, Jan; Meder, Dirk; Quay, Rüdiger; Ambacher, Oliver; Kallfass, Ingmar:
A 600V GaN-on-Si power IC with integrated gate driver, freewheeling diode, temperature and current sensors and auxiliary devices
(International Conference on Integrated Power Electronics Systems (CIPS) <11, 2020, Berlin>)
In: Verband Deutscher Elektrotechniker e.V. -VDE-, Berlin: CIPS 2020, 11th International Conference on Integrated Power Electronics Systems. Proceedings: March, 24 - 26, 2020, Berlin, Germany; CD-ROM. Berlin: VDE-Verlag, 2020. (ETG-Fachbericht 161), pp. 69-74
Conference Paper
2020Albahrani, Sayed Ali; Heuken, Lars; Schwantuschke, Dirk; Gneiting, Thomas; Burghartz, Joachim N.; Khandelwal, Sourabh:
Consistent surface-potential-based modeling of drain and gate currents in AlGaN/GaN HEMTs
In: IEEE transactions on electron devices, Vol.67 (2020), No.2, pp.455-462
Journal Article
2020Ding, Anli; Kirste, Lutz; Lu, Yuan; Driad, Rachid; Kurz, Nicolas; Lebedev, Vadim; Christoph, Tim; Feil, Niclas M.; Lozar, Roger; Metzger, Thomas; Ambacher, Oliver; Zukauskaite, Agne:
Enhanced electromechanical coupling in SAW resonators based on sputtered non-polar Al₀.₇₇Sc₀.₂₃N (1120) thin films
In: Applied Physics Letters, Vol.116 (2020), No.10, Art. 101903, 6 pp.
Journal Article
2020Leone, Stefano; Fornari, Roberto; Bosi, Matteo; Montedoro, Vicenzo; Kirste, Lutz; Doering, Philipp; Benkhelifa, Fouad; Prescher, Mario; Manz, Christian; Polyakov, Vladimir M.; Ambacher, Oliver:
Expitaxial growth of GaN/Ga2O3 and Ga2O3/GaN heterostructures for novel high electron mobility transistors
In: Diamond and Related Materials, Vol.534 (2020), Art. 125511, 6 pp.
Journal Article
2020Albahrani, Sayed Ali; Mahajan, Dhawal; Kargazzi, Saleh; Schwantuschke, Dirk; Gneiting, Thomas; Senesky, Debbie G.; Khandelwal, Sourabh:
Extreme temperature modeling of AlGaN/GaN HEMTs
In: IEEE transactions on electron devices, Vol.67 (2020), No.2, pp.430-437
Journal Article
2020Kemmer, Tobias; Dammann, Michael; Baeumler, Martina; Polyakov, Vladimir M.; Brueckner, Peter; Konstanzer, Helmer; Quay, Rüdiger; Ambacher, Oliver:
Failure Analysis of 100 nm AlGaN/GaN HEMTs Stressed under On- and Off-State Stress
(International Reliability Physics Symposium (IRPS) <58, 2020, Online>)
In: Institute of Electrical and Electronics Engineers -IEEE-: IEEE International Reliability Physics Symposium, IRPS 2020. Proceedings: Grapevine, Texas, USA, 28 April - 30 May 2020, virtual symposium. Piscataway, NJ: IEEE, 2020, 6 pp.
Conference Paper
2020Braun, Tanja; Nguyen, Thanh Duy; Voges, Steves; Wöhrmann, Markus; Gernhardt, Robert; Becker, Karl-Friedrich; Ndip, Ivan; Freimund, Damian; Schneider-Ramelow, Martin; Lang, Klaus-Dieter; Schwantuschke, Dirk; Ture, Erdin; Pretl, Michael; Engels, Sven:
Fan-out wafer level packaging of GaN components for RF applications
(Electronic Components and Technology Conference (ECTC) <70, 2020, Online>)
In: Institute of Electrical and Electronics Engineers -IEEE-: IEEE 70th Electronic Components and Technology Conference, ECTC 2020. Proceedings: 3 - 30 June 2020, Orlando, Florida, Virtual. Los Alamitos, Calif.: IEEE Computer Society Conference Publishing Services (CPS), 2020, pp. 7-13
Conference Paper
2020Ćwikliński, Maciej; Brueckner, Peter; Leone, Stefano; Krause, Sebastian; Friesicke, Christian; Massler, Hermann; Quay, Rüdiger; Ambacher, Oliver:
First demonstration of G-band broadband GaN power amplifier MMICs operating beyond 200 GHz
(International Microwave Symposium (IMS) <2020, Online>)
In: Institute of Electrical and Electronics Engineers -IEEE-: IEEE/MTT-S International Microwave Symposium, IMS 2020: Live Stream Event: 4 - 6 August 2020, Los Angeles. Piscataway, NJ: IEEE, 2020, pp. 1117-1120
Conference Paper
2020Basler, Michael; Mönch, Stefan; Reiner, Richard; Waltereit, Patrick; Quay, Rüdiger; Kallfass, Ingmar; Ambacher, Oliver:
A GaN-based currrent sense amplifier for GaN HEMTs with integrated current shunts
(International Symposium on Power Semiconductor Devices and ICs (ISPSD) <32, 2020, Online>)
In: Institute of Electrical and Electronics Engineers -IEEE-: 32nd International Symposium on Power Semiconductor Devices and ICs, ISPSD 2020. Proceedings: September 13-18, 2020, Vienna, Austria, Virtual Conference. Piscataway, NJ: IEEE, 2020, pp. 274-277
Conference Paper
2020Doering, Philipp; Driad, Rachid; Leone, Stefano; Müller, Stefan; Waltereit, Patrick; Kirste, Lutz; Polyakov, Vladimir M.; Mikulla, Michael; Ambacher, Oliver:
Growth and fabrication of quasivertical current aperture vertical electron transistor structures
In: Physica status solidi. A, (2020), Online First, Art. 2000379, 7 pp.
Journal Article
2020Basler, Michael; Reiner, Richard; Mönch, Stefan; Waltereit, Patrick; Quay, Rüdiger; Kallfass, Ingmar; Ambacher, Oliver:
Large-area lateral AlGaN/GaN-on-Si field-effect rectifier with low turn-on voltage
In: IEEE Electron Device Letters, Vol.41 (2020), No.7, pp.993-996
Journal Article
2020Leone, Stefano; Ligl, Jana; Manz, Christian; Kirste, Lutz; Fuchs, Theo; Menner, Hanspeter; Prescher, Mario; Wiegert, Joachim; Zukauskaite, Agne; Quay, Rüdiger; Ambacher, Oliver:
Metal-organic chemical vapor deposition of aluminum scandium nitride
In: Physica status solidi. Rapid research letters, Vol.14 (2020), No.1, Art. 1900535, 6 pp.
Journal Article
2020Ligl, Jana; Leone, Stefano; Manz, Christian; Kirste, Lutz; Doering, Philipp; Fuchs, Theodor; Prescher, Mario; Ambacher, Oliver:
Metalorganic chemical vapor phase deposition of AlScN/GaN heterostructures
In: Journal of applied physics, Vol.127 (2020), No.19, Art. 195704, 9 pp.
Journal Article
2020Mönch, Stefan; Müller, Stefan; Reiner, Richard; Waltereit, Patrick; Czap, Heiko; Basler, Michael; Hückelheim, Jan; Kirste, Lutz; Kallfass, Ingmar; Quay, Rüdiger; Ambacher, Oliver:
Monolithic integrated AlGaN/GaN power converter topologies on high-voltage AlN/GaN superlattice buffer
In: Physica status solidi. A, (2020), Online First, Art. 2000404, 9 pp.
Journal Article
2020Basler, Michael; Mönch, Stefan; Reiner, Richard; Waltereit, Patrick; Quay, Rüdiger; Kallfass, Ingmar; Ambacher, Oliver:
Monolithic integration of inductive components in a GaN-on-Si technology
(International Conference on Integrated Power Electronics Systems (CIPS) <11, 2020, Berlin>)
In: Verband Deutscher Elektrotechniker e.V. -VDE-, Berlin: CIPS 2020, 11th International Conference on Integrated Power Electronics Systems. Proceedings: March, 24 - 26, 2020, Berlin, Germany; CD-ROM. Berlin: VDE-Verlag, 2020. (ETG-Fachbericht 161), pp. 63-68
Conference Paper
2020Weiß, Markus; Friesicke, Christian; Quay, Rüdiger; Ambacher, Oliver:
A novel 32-Gb/s 5.6-Vpp digital-to-analog converter in 100 nm GaN technology for 5G signal generation
(International Microwave Symposium (IMS) <2020, Online>)
In: Institute of Electrical and Electronics Engineers -IEEE-: IEEE/MTT-S International Microwave Symposium, IMS 2020: Live Stream Event: 4 - 6 August 2020, Los Angeles. Piscataway, NJ: IEEE, 2020, pp. 952-955
Conference Paper
2020Leone, Stefano; Brueckner, Peter; Kirste, Lutz; Doering, Philipp; Fuchs, Theo; Müller, Stefan; Prescher, Mario; Quay, Rüdiger; Ambacher, Oliver:
Optimization of metal-organic chemical vapor deposition regrown n-GaN
In: Physica status solidi. B, Vol.257 (2020), No.3, Art. 1900436, 8 pp.
Journal Article
2020Neininger, Philipp; Amirpour, Raul; John, Laurenz; Friesicke, Christian; Quay, Rüdiger; Zwick, Thomas:
A phase shifter with integrated PA MMIC for Ka-Band frequencies
(German Microwave Conference (GeMiC) <2020, Cottbus>)
In: Verband Deutscher Elektrotechniker e.V. -VDE-, Berlin: German Microwave Conference, GeMiC 2020: March 09-11, 2020, Cottbus, Germany. Piscataway, NJ: IEEE, 2020, pp. 13-16
Conference Paper
2020Mahajan, Dhawal; Albahrani, Sayed Ali; Sodhi, Raj; Eguchi, Takashi; Khandelwal, Sourabh:
Physics-oriented device model for packaged GaN devices
In: IEEE transactions on power electronics, Vol.35 (2020), No.6, pp.6332-6339
Journal Article
2020Gupta, Rohit; Ambacher, Oliver (Erstprüfer); Quay, Rüdiger (Zweitprüfer); Driad, Rachid (Supervisor) :
Reliability characteristics of vertical pin diodes on Si and GaN substrates for high-power applications
Freiburg/Brsg., Univ., Master Thesis, 2020
Master Thesis
2020Reiner, Richard; Gerrer, Thomas; Weiss, Beatrix; Waltereit, Patrick; Mönch, Stefan; Meder, Dirk; Sinnwell, Matthias; Dammann, Michael; Quay, Rüdiger; Ambacher, Oliver:
Si-substrate removal for AlGaN/GaN devices on PCB carriers
(International Symposium on Power Semiconductor Devices and ICs (ISPSD) <32, 2020, Online>)
In: Institute of Electrical and Electronics Engineers -IEEE-: 32nd International Symposium on Power Semiconductor Devices and ICs, ISPSD 2020. Proceedings: September 13-18, 2020, Vienna, Austria, Virtual Conference. Piscataway, NJ: IEEE, 2020, pp. 286-289
Conference Paper
This publication list has been generated from the publication database Fraunhofer-Publica.