The configuration used to characterize the scattering parameters (S-parameters) of high-frequency components combines the commercial Evolvity 300 on-wafer measurement station from FormFactor, Inc. with a PNA-X-Pro vector network analyzer from Keysight Technologies. To the best of the knowledge of Fraunhofer IAF, this combination is currently unique for the frequency range from 10 MHz to 250 GHz. Fraunhofer IAF procured the new measurement system as part of the APECS pilot line and has successfully put it into operation. The acquisition took place as part of a public procurement process.
Researchers at Fraunhofer IAF have already successfully conducted initial measurements with the system. A distributed amplifier (DA) developed in-house was measured at the system’s performance limit (250 GHz). It achieves a gain of 11 ± 2 dB in the frequency range between 4 and 420 GHz. The amplifier is based on high-electron-mobility transistors (HEMTs), which were fabricated using the III-V semiconductor material system indium gallium arsenide and transferred onto silicon substrates (InGaAs-on-Si).
The new measurement station significantly expands the measurement capabilities of Fraunhofer IAF and enables a significantly more efficient characterization of state-of-the-art high-frequency components. Since single-sweep measurements up to 250 GHz are possible, the number of measurement setups required is reduced—in the case of the characterized 400-GHz amplifier, from three to two setups. The expansion of the measurement infrastructure at Fraunhofer IAF supports researchers in developing novel high-frequency chiplets as part of the APECS project.
Fraunhofer IAF will present the measured distributed amplifier at the European Microwave Week (EuMW) 2026 at Booth B35. The measurement setup will also be demonstrated there by the equipment manufacturer.