Publikationen des Geschäftsfelds Leistungselektronik

2019

JahrAutor/Titel/QuelleDokumentart
2019Ćwikliński, Maciej; Brueckner, Peter; Leone, Stefano; Friesicke, Christian; Lozar, Roger; Massler, Hermann; Quay, Rüdiger; Ambacher, Oliver:
190-GHz G-band GaN amplifier MMICs with 40 GHz of bandwidth
(International Microwave Symposium (IMS) <2019, Boston/Mass.>)
In: Institute of Electrical and Electronics Engineers -IEEE-: IEEE MTT-S International Microwave Symposium, IMS 2019: 2-7 June 2019, Boston, Massachusetts. Piscataway, NJ: IEEE, 2019, pp. 1257-1260
Konferenzbeitrag
2019Gerrer, Thomas; Czap, Heiko; Maier, Thomas; Benkhelifa, Fouad; Müller, Stefan; Nebel, Christoph E.; Waltereit, Patrick; Quay, Rüdiger; Cimalla, Volker:
3 GHz RF measurements of AlGaN/GaN transistors transferred from silicon substrates onto single crystalline diamond
In: AIP Advances, Vol.9 (2019), No.12, Art. 125106, 6 pp.
Zeitschriftenaufsatz
2019Amirpour, Raul; Schwantuschke, Dirk; Brueckner, Peter; Quay, Rüdiger; Ambacher, Oliver:
AlGaN/GaN high electron-mobility varactors on silicon substrate
(German Microwave Conference (GeMiC) <12, 2019, Stuttgart>)
In: Verband Deutscher Elektrotechniker e.V. -VDE-, Berlin: German Microwave Conference, GeMiC 2019: 25-27 March 2019, Stuttgart, Germany. Stuttgart, 2019, pp. 244-247
Konferenzbeitrag
2019Mönch, Stefan; Reiner, Richard; Waltereit, Patrick; Meder, Dirk; Basler, Michael; Quay, Rüdiger; Ambacher, Oliver; Kallfass, Ingmar:
Asymmetrical substrate-biasing effects at up to 350V operation of symmetrical monolithic normally-off GaN-on-Si half-bridges
(Workshop on Wide Bandgap Power Devices and Applications (WiPDA) <7, 2019, Raleigh/NC>)
In: Veliadis, Victor (ed.): 7th IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2019: October 29-31, 2019, Raleigh, North Carolina. Piscataway, NJ: IEEE, 2019, pp. 28-34
Konferenzbeitrag
2019Kotzea, Simon; Witte, Wiebke; Godejohann, Birte-Julia; Marx, Mathias; Heuken, Michael; Kalisch, Holger; Aidam, Rolf; Vescan, Andrei:
Comparison of MOCVD and MBE regrowth for CAVET fabrication
In: Electronics. Online journal, Vol.8 (2019), No.4, Art. 377, 9 pp.
Zeitschriftenaufsatz
2019Hodges, Jason; Albahrani, Sayed Ali; Khandelwal, Sourabh:
A computationally efficient modelling methodology for field-plates in GaN HEMTs
(BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)<2019, Nashville/Tenn.>)
In: Institute of Electrical and Electronics Engineers -IEEE-: IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium, BCICTS 2019: 3-6 November 2019, Nashville. Piscataway, NJ: IEEE, 2019, 4 pp.
Konferenzbeitrag
2019Hodges, Jason; Schwantuschke, Dirk; Raay, Friedbert van; Brueckner, Peter; Quay, Rüdiger; Khandelwal, Sourabh:
Consistent modelling of I-V and C-V behaviour of GaN HEMTs in presence of trapping
(International Microwave Symposium (IMS) <2019, Boston/Mass.>)
In: Institute of Electrical and Electronics Engineers -IEEE-: IEEE MTT-S International Microwave Symposium, IMS 2019: 2-7 June 2019, Boston, Massachusetts. Piscataway, NJ: IEEE, 2019, pp. 603-606
Konferenzbeitrag
2019Ćwikliński, Maciej; Brueckner, Peter; Leone, Stefano; Friesicke, Christian; Massler, Hermann; Lozar, Roger; Wagner, Sandrine; Quay, Rüdiger; Ambacher, Oliver:
D-band and G-band high-performance GaN power amplifier MMICs
In: IEEE transactions on microwave theory and techniques, Vol.67 (2019), No.12, pp.5080-5089
Zeitschriftenaufsatz
2019Manz, Christian; Ambacher, Oliver (Referent); Fiederle, Michael (Referent) :
Darstellung und Simulation von AlN/GaN-Übergitterstrukturen für elektronische Bauelemente
Freiburg/Brsg., Univ., Diss., 2019
Dissertation
2019Neininger, Philipp; John, Laurenz; Brueckner, Peter; Friesicke, Christian; Quay, Rüdiger; Zwick, Thomas:
Design, analysis and evaluation of a broadband high-power amplifier for Ka-band frequencies
(International Microwave Symposium (IMS) <2019, Boston/Mass.>)
In: Institute of Electrical and Electronics Engineers -IEEE-: IEEE MTT-S International Microwave Symposium, IMS 2019: 2-7 June 2019, Boston, Massachusetts. Piscataway, NJ: IEEE, 2019, pp. 564-567
Konferenzbeitrag
2019Leone, Stefano; Benkhelifa, Fouad; Kirste, Lutz; Manz, Christian; Quay, Rüdiger; Ambacher, Oliver:
Epitaxial growth optimization of AlGaN/GaN high electron mobility transistor structures on 3C-SiC/Si
In: Journal of applied physics, Vol.125 (2019), No.23, Art. 235701, 9 pp.
Zeitschriftenaufsatz
2019Ding, Anli; Kurz, Nicolas; Driad, Rachid; Lu, Yuan; Lozar, Roger; Christoph, Tim; Kirste, Lutz; Ambacher, Oliver; Zukauskaite, Agne:
Experimental determination of Al1-xScxN thin film thermo-electro-acoustic properties up to 140°C by using SAW resonators
(International Ultrasonics Symposium (IUS) <2019, Glasgow>)
In: Cochran, Sandy (General Co-Chair): IEEE International Ultrasonics Symposium, IUS 2019: October 6 - 9, 2019, Glasgow, Scotland. Piscataway, NJ: IEEE, 2019, pp. 710-714
Konferenzbeitrag
2019Kurz, N.; Ding, Anli; Urban, F.D.; Lu, Yuan; Kirste, Lutz; Feil, N.M.; Zukauskaite, Agne; Ambacher, Oliver:
Experimental determination of the electro-acoustic properties of thin film AlScN using surface acoustic wave resonators
In: Journal of applied physics, Vol.126 (2019), No.7, Art. 075106, 10 pp.
Zeitschriftenaufsatz
2019Feil, Niclas M.; Kurz, Nicolas; Urban, Daniel F.; Altayara, Abdullah; Bjoern, Christian; Ding, Anli; Zukauskaite, Agne; Ambacher, Oliver:
Finite element analysis of SAW propagation characteristics in c-plane (0001) and a-plane (11-20) ALScN thin films
(International Ultrasonics Symposium (IUS) <2019, Glasgow>)
In: Cochran, Sandy (General Co-Chair): IEEE International Ultrasonics Symposium, IUS 2019: October 6 - 9, 2019, Glasgow, Scotland. Piscataway, NJ: IEEE, 2019, pp. 2588-2591
Konferenzbeitrag
2019Basler, Michael; Mönch, Stefan; Reiner, Richard; Waltereit, Patrick; Quay, Rüdiger; Kallfass, Ingmar; Ambacher, Oliver:
A GaN-on-Si-based logic, driver and DC-DC converter circuit with closed-loop peak current-mode control
(PCIM Europe <2019, Nuremberg>)
In: MESAGO Messe Frankfurt GmbH, Stuttgart: PCIM Europe 2019, International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management. CD-ROM: Nuremberg, 7-9 May 2019; Proceedings. Berlin: VDE-Verlag, 2019, pp. 1492-1497
Konferenzbeitrag
2019Ture, Erdin; Leone, Stefano; Brueckner, Peter; Quay, Rüdiger; Ambacher, Oliver:
High-power (>2 W) E-band PA MMIC based on high efficiency GaN-HEMTs with optimized buffer
(International Microwave Symposium (IMS) <2019, Boston/Mass.>)
In: Institute of Electrical and Electronics Engineers -IEEE-: IEEE MTT-S International Microwave Symposium, IMS 2019: 2-7 June 2019, Boston, Massachusetts. Piscataway, NJ: IEEE, 2019, pp. 1407-1410
Konferenzbeitrag
2019Krause, Sebastian; Brueckner, Peter; Dammann, Michael; Quay, Rüdiger:
High-power-density AlGaN/GaN technology for 100-V operation at L-band frequencies
(International Electron Devices Meeting (IEDM) <65, 2019, San Francisco/Calif.>)
In: Institute of Electrical and Electronics Engineers -IEEE-: 65th IEEE International Electron Devices Meeting, IEDM 2019: December 7-11, 2019, San Francisco. Piscataway, NJ: IEEE, 2019, pp. 406-409
Konferenzbeitrag
2019Amirpour, Raul; Schwantuschke, Dirk; Brueckner, Peter; Quay, Rüdiger; Ambacher, Oliver:
High-Q anti-series AlGaN/GaN high electron-mobility varactor
(International Microwave Symposium (IMS) <2019, Boston/Mass.>)
In: Institute of Electrical and Electronics Engineers -IEEE-: IEEE MTT-S International Microwave Symposium, IMS 2019: 2-7 June 2019, Boston, Massachusetts. Piscataway, NJ: IEEE, 2019, pp. 599-602
Konferenzbeitrag
2019Weiß, Markus; Friesicke, Christian; Quay, Rüdiger; Ambacher, Oliver:
Integrated 2-b riemann pump RF-DAC in GaN technology for 5G base stations
(International Microwave Symposium (IMS) <2019, Boston/Mass.>)
In: Institute of Electrical and Electronics Engineers -IEEE-: IEEE MTT-S International Microwave Symposium, IMS 2019: 2-7 June 2019, Boston, Massachusetts. Piscataway, NJ: IEEE, 2019, pp. 1426-1429
Konferenzbeitrag
2019Mönch, Stefan; Reiner, Richard; Waltereit, Patrick; Quay, Rüdiger; Ambacher, Oliver; Kallfass, Ingmar:
Integrated current sensing in GaN power ICs
(International Symposium on Power Semiconductor Devices and ICs (ISPSD) <31, 2019, Shanghai>)
In: Institute of Electrical and Electronics Engineers -IEEE-: 31st International Symposium on Power Semiconductor Devices and ICs, ISPSD 2019. Proceedings: May 19-23, 2019, Shanghai, China. Piscataway, NJ: IEEE, 2019, pp. 111-114
Konferenzbeitrag
2019Frei, Kathrin; Trejo-Hernández, Raúl; Schütt, Sebastian; Kirste, Lutz; Prescher, Mario; Aidam, Rolf; Müller, Stefan; Waltereit, Patrick; Ambacher, Oliver; Fiederle, Michael:
Investigation of growth parameters for ScAlN-barrier HEMT structures by plasma-assisted MBE
(International Workshop on Nitride Semiconductors (IWN) <2018, Kanazawa>)
In: Japanese journal of applied physics, Vol.58 (2019), No.SC, Art. SC1045, 6 pp.
Zeitschriftenaufsatz
2019Amirpour, Raul; Schwantuschke, Dirk; Raay, Friedbert van; Brueckner, Peter; Quay, Rüdiger; Ambacher, Oliver:
Large-signal modeling of a scalable high-Q AlGaN/GaN high electron-mobility varactor
In: IEEE transactions on microwave theory and techniques, Vol.67 (2019), No.3, pp.922-927
Zeitschriftenaufsatz
2019Aidam, Rolf; Ambacher, Oliver; Diwo, Elke; Godejohann, Birte-Julia; Kirste, Lutz; Lim, T.; Quay, Rüdiger; Waltereit, Patrick:
MBE of III-Nitride Semiconductors for Electronic Devices
In: Asahi, Hajime (Ed.): Molecular beam epitaxy: Materials and applications for electronics and optoelectronics. Hoboken/NJ: Wiley & Sons, 2019, pp. 108-134
Aufsatz in Buch
2019Thome, Fabian; Brueckner, Peter; Quay, Rüdiger; Ambacher, Oliver:
Millimeter-wave single-pole double-throw switches based on a 100-nm gate-length AlGaN/GaN-HEMT technology
(International Microwave Symposium (IMS) <2019, Boston/Mass.>)
In: Institute of Electrical and Electronics Engineers -IEEE-: IEEE MTT-S International Microwave Symposium, IMS 2019: 2-7 June 2019, Boston, Massachusetts. Piscataway, NJ: IEEE, 2019, pp. 1403-1406
Konferenzbeitrag
2019Albahrani, Sayed Ali; Mahajan, Dhawal; Mönch, Stefan; Reiner, Richard; Waltereit, Patrick; Schwantuschke, Dirk; Khandelwal, Sourabh:
Modeling of the impact of the substrate voltage on the capacitances of GaN-on-Si HEMTs
In: IEEE transactions on electron devices, Vol.66 (2019), No.12, pp.5103-5110
Zeitschriftenaufsatz
2019Hodges, Jason; Albahrani, Sayed Ali; Schwantuschke, Dirk; Raay, Friedbert van; Brueckner, Peter; Khandelwal, Sourabh:
Modeling the impact of the high-field region on the C-V characteristics in GaN HEMTs
In: IEEE transactions on electron devices, Vol.66 (2019), No.11, pp.4679-4684
Zeitschriftenaufsatz
2019Basler, Michael; Mönch, Stefan; Reiner, Richard; Waltereit, Patrick; Quay, Rüdiger; Kallfass, Ingmar; Ambacher, Oliver:
A pseudo-complementary GaN-based gate driver with Reduced Static Losses
(Workshop on Wide Bandgap Power Devices and Applications (WiPDA) <7, 2019, Raleigh/NC>)
In: Veliadis, Victor (ed.): 7th IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2019: October 29-31, 2019, Raleigh, North Carolina. Piscataway, NJ: IEEE, 2019, pp. 93-98
Konferenzbeitrag
Diese Publikationsliste wurde aus der Publikationsdatenbank Fraunhofer-Publica erstellt.