Publikationen des Geschäftsfelds Leistungselektronik

2019

JahrAutor/Titel/QuelleDokumentart
2019Ćwikliński, Maciej; Brueckner, Peter; Leone, Stefano; Friesicke, Christian; Lozar, Roger; Massler, Hermann; Quay, Rüdiger; Ambacher, Oliver:
190-GHz G-band GaN amplifier MMICs with 40 GHz of bandwidth
(International Microwave Symposium (IMS) <2019, Boston/Mass.>)
In: Institute of Electrical and Electronics Engineers -IEEE-: IEEE MTT-S International Microwave Symposium, IMS 2019: 2-7 June 2019, Boston, Massachusetts. Piscataway, NJ: IEEE, 2019, pp. 1257-1260
Konferenzbeitrag
2019Amirpour, Raul; Schwantuschke, Dirk; Brueckner, Peter; Quay, Rüdiger; Ambacher, Oliver:
AlGaN/GaN high electron-mobility varactors on silicon substrate
(German Microwave Conference (GeMiC) <12, 2019, Stuttgart>)
In: Verband Deutscher Elektrotechniker e.V. -VDE-, Berlin: German Microwave Conference, GeMiC 2019: 25-27 March 2019, Stuttgart, Germany. Stuttgart, 2019, pp. 244-247
Konferenzbeitrag
2019Kotzea, Simon; Witte, Wiebke; Godejohann, Birte-Julia; Marx, Mathias; Heuken, Michael; Kalisch, Holger; Aidam, Rolf; Vescan, Andrei:
Comparison of MOCVD and MBE regrowth for CAVET fabrication
In: Electronics. Online journal, Vol.8 (2019), No.4, Art. 377, 9 pp.
Zeitschriftenaufsatz
2019Hodges, Jason; Schwantuschke, Dirk; Raay, Friedbert van; Brueckner, Peter; Quay, Rüdiger; Khandelwal, Sourabh:
Consistent modelling of I-V and C-V behaviour of GaN HEMTs in presence of trapping
(International Microwave Symposium (IMS) <2019, Boston/Mass.>)
In: Institute of Electrical and Electronics Engineers -IEEE-: IEEE MTT-S International Microwave Symposium, IMS 2019: 2-7 June 2019, Boston, Massachusetts. Piscataway, NJ: IEEE, 2019, pp. 603-606
Konferenzbeitrag
2019Neininger, Philipp; John, Laurenz; Brueckner, Peter; Friesicke, Christian; Quay, Rüdiger; Zwick, Thomas:
Design, analysis and evaluation of a broadband high-power amplifier for Ka-band frequencies
(International Microwave Symposium (IMS) <2019, Boston/Mass.>)
In: Institute of Electrical and Electronics Engineers -IEEE-: IEEE MTT-S International Microwave Symposium, IMS 2019: 2-7 June 2019, Boston, Massachusetts. Piscataway, NJ: IEEE, 2019, pp. 564-567
Konferenzbeitrag
2019Leone, Stefano; Benkhelifa, Fouad; Kirste, Lutz; Manz, Christian; Quay, Rüdiger; Ambacher, Oliver:
Epitaxial growth optimization of AlGaN/GaN high electron mobility transistor structures on 3C-SiC/Si
In: Journal of applied physics, Vol.125 (2019), No.23, Art. 235701, 9 pp.
Zeitschriftenaufsatz
2019Ture, Erdin; Leone, Stefano; Brueckner, Peter; Quay, Rüdiger; Ambacher, Oliver:
High-power (>2 W) E-band PA MMIC based on high efficiency GaN-HEMTs with optimized buffer
(International Microwave Symposium (IMS) <2019, Boston/Mass.>)
In: Institute of Electrical and Electronics Engineers -IEEE-: IEEE MTT-S International Microwave Symposium, IMS 2019: 2-7 June 2019, Boston, Massachusetts. Piscataway, NJ: IEEE, 2019, pp. 1407-1410
Konferenzbeitrag
2019Amirpour, Raul; Schwantuschke, Dirk; Brueckner, Peter; Quay, Rüdiger; Ambacher, Oliver:
High-Q anti-series AlGaN/GaN high electron-mobility varactor
(International Microwave Symposium (IMS) <2019, Boston/Mass.>)
In: Institute of Electrical and Electronics Engineers -IEEE-: IEEE MTT-S International Microwave Symposium, IMS 2019: 2-7 June 2019, Boston, Massachusetts. Piscataway, NJ: IEEE, 2019, pp. 599-602
Konferenzbeitrag
2019Mönch, Stefan; Reiner, Richard; Waltereit, Patrick; Quay, Rüdiger; Ambacher, Oliver; Kallfass, Ingmar:
Integrated current sensing in GaN power ICs
(International Symposium on Power Semiconductor Devices and ICs (ISPSD) <31, 2019, Shanghai>)
In: Institute of Electrical and Electronics Engineers -IEEE-: 31st International Symposium on Power Semiconductor Devices and ICs, ISPSD 2019. Proceedings: May 19-23, 2019, Shanghai, China. Piscataway, NJ: IEEE, 2019, pp. 111-114
Konferenzbeitrag
2019Frei, Kathrin; Trejo-Hernández, Raúl; Schütt, Sebastian; Kirste, Lutz; Prescher, Mario; Aidam, Rolf; Müller, Stefan; Waltereit, Patrick; Ambacher, Oliver; Fiederle, Michael:
Investigation of growth parameters for ScAlN-barrier HEMT structures by plasma-assisted MBE
(International Workshop on Nitride Semiconductors (IWN) <2018, Kanazawa>)
In: Japanese journal of applied physics, Vol.58 (2019), No.SC, Art. SC1045, 6 pp.
Zeitschriftenaufsatz
2019Amirpour, Raul; Schwantuschke, Dirk; Raay, Friedbert van; Brueckner, Peter; Quay, Rüdiger; Ambacher, Oliver:
Large-signal modeling of a scalable high-Q AlGaN/GaN high electron-mobility varactor
In: IEEE transactions on microwave theory and techniques, Vol.67 (2019), No.3, pp.922-927
Zeitschriftenaufsatz
2019Thome, Fabian; Brueckner, Peter; Quay, Rüdiger; Ambacher, Oliver:
Millimeter-wave single-pole double-throw switches based on a 100-nm gate-length AlGaN/GaN-HEMT technology
(International Microwave Symposium (IMS) <2019, Boston/Mass.>)
In: Institute of Electrical and Electronics Engineers -IEEE-: IEEE MTT-S International Microwave Symposium, IMS 2019: 2-7 June 2019, Boston, Massachusetts. Piscataway, NJ: IEEE, 2019, pp. 1403-1406
Konferenzbeitrag
Diese Publikationsliste wurde aus der Publikationsdatenbank Fraunhofer-Publica erstellt.