Publikationen des Geschäftsfelds Leistungselektronik

Key Publications

 

High-gain AlGaN/GaN HEMT single chip e-band power amplifier MMIC with 30 dBm output power.
Ture, E.; Schwantuschke, D.; Tessmann, A.; Wagner, S.; Brueckner, P.; Mikulla, M.; Quay, R.; Ambacher, O.
2015 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) 2015.
Piscataway, NJ: IEEE, 2015, DOI: 10.1109/CSICS.2015.7314510


High-gain over 30% PAE power amplifier MMICs in 100 nm GaN technology at Ka-band frequencies.
Chéron, J.; Campovecchio, M.; Quéré, R.; Schwantuschke, D.; Quay, R.; Ambacher, O.
10th European Microwave Integrated Circuits Conference (EuMIC) 2015.
London: Horizon House, 2015, 262-264
(European Microwave Week (EuMW) 2015).


Degradation of 0.25 µm GaN HEMTs under high temperature stress test.
Dammann, M.; Baeumler, M.; Brueckner, P.; Bronner, W.; Maroldt, S.; Konstanzer, H.; Wespel, M.; Quay, R.; Mikulla, M.; Graff, A.; Lorenzini, M.; Fagerlind, M.; van der Wel, P.J.; Rödle, T.
Microelectronics Reliability 55 (2015), 9-10, 1667-1671


Monolithically-integrated mulitlevel inverter on lateral GaN-on-Si technology for high-voltage applications.
Weiss, B.; Reiner, R.; Waltereit, P.; Müller, S.; Wespel, M.; Quay, R.; Ambacher, O.
2015 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS), 2015.
Piscataway, NJ: IEEE, 2015, 1-4


Watt-level non-uniform distributed 6-37 GHz power amplifier MMIC with dual-gate driver stage in GaN technology.
Dennler, P.; Quay, R.; Brueckner, P.; Schlechtweg, M.; Ambacher, O.
In: IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications (PAWR), 2014.
Piscataway, NJ: IEEE, 2014, 37-39


Manga: Manufacturable GaN SiC substrates and GaN epi wafer supply chain.
Mikulla, M.; Storm, S.; Henelius, N.; Poisson, M.-A.; Zanoni, E.; Kuball, M.
In: 9th European Microwave Integrated Circuits Conference (EuMIC) 2014: EuMW 2014.
London: Horizon House, 2014, 221-224
(European Microwave Week (EuMW) 2014).


A 92 GHz GaN HEMT voltage-controlled oscillator MMIC.
Weber, R.; Schwantuschke, D.; Brueckner, P.; Quay, R.; Raay, F. van; Ambacher, O.
In: 2014 International Microwave Symposium (IMS 2014): 2014 IEEE MTT-S.
Piscataway, NJ: IEEE, 2014, 1-4


Characterization of AlGaN/GaN-on-Si HFETs in high-power converter applications.
Weiss, B.; Reiner, R.; Quay, R.; Waltereit, P.; Müller, S.; Benkhelifa, F.; Mikulla, M.; Schlechtweg, M.; Ambacher, O.
In: The 16h European Conference on Power Electronis and Applications (EPE 2014): ECCE Europe.
2014, 1-10


High-efficiency power amplifier MMICs in 100 nm GaN technology at Ka-band frequencies.
Chéron, J.; Campovecchio, M.; Quéré, R.; Schwantuschke, D.; Quay, R.; Ambacher, O.
In: 8th European Microwave Integrated Circuits Conference (EuMIC) 2013: EuMIC 2013.
London: Horizon House, 2013, 492-495
(European Microwave Week 2013).


Benchmarking of large-area GaN-on-Si HFET power devices for highly-efficient, fast-switching converter applications.
Reiner, R.; Waltereit, P.; Benkhelifa, F.; Müller, S.; Wespel, M.; Quay, R.; Schlechtweg, M.; Mikulla, M.; Ambacher, O.
In: 2013 IEEE CSIC Symposium (CSICS): IEEE Compound Semiconductor Integrated Cicuit Symposium.
Piscataway, NJ: IEEE, 2013, 1-4


High-gain millimeter-wave AlGaN/GaN transistors.
Schwantuschke, D.; Brueckner, P.; Quay, R.; Mikulla, M.; Ambacher, O.
In: IEEE Transactions on Electron Devices 60 (2013), 10, 3112-3118


A package-integrated 50 W high-efficiency RF CMOS-GaN class-E power amplifier.
van der Heijden, M. P.; Acar, M.; Maroldt, S.
In: 2013 International Microwave Symposium (IMS 2013): 2013 IEEE MTT-S.
Piscataway, NJ: IEEE, 2013, 3 S.


Dual-band class-ABJ AlGaN/GaN high power amplifier.
Carrubba, V.; Maroldt, S.; Musser, M.; Walcher, H.; Schlechtweg, M.; Quay, R.; Ambacher, O.
In: 42th European Microwave Conference (EuMC) 2012.
2012, 1015-1018
(European Microwave Week 2012).


Reverse bias stress test of GaN HEMTs for high-voltage switching applications.
Dammann, M.; Czap, H.; Rüster, J.; Baeumler, M.; Gütle, F.; Waltereit, P.; Benkhelifa, F.; Reiner, R.; Cäsar, M.; Konstanzer, H.; Müller, S.; Quay, R.; Mikulla, M.; Ambacher, O.
In: 2012 IEEE International Integrated Reliability Workshop: Final Report.
IEEE Electron Devices Society, 2012, 105-108


Fractal structures for low-resistance large area AlGaN/GaN power transistors.
Reiner, R.; Waltereit, P.; Benkhelifa, F.; Müller, S.; Walcher, H.; Wagner, S.; Quay, R.; Schlechtweg, M.; Ambacher, O.
In: IEEE, New York: 24th International Symposium on Power Semiconductor Devices and ICs (ISPSD 2012).
Piscataway, NJ: IEEE, 2012, 341-344


From epitaxy to backside process: reproducible AlGaN/GaN HEMT technology for reliable and rugged power devices.
Bronner, W.; Waltereit, P.; Müller, S.; Dammann, M.; Kiefer, R.; Dennler, P.; Raay, F. van; Musser, M.; Quay, R.; Mikulla, M.; Ambacher, O.
In: 2011 International Conference on Compound Semiconductor MANufacturing TECHnology (CS MANTECH).
omnipress, 2011, 3 S.


Broadband GaN-based switch-mode core MMICs with 20 W output power operating at UHF.
Maroldt, S.; Quay, R.; Haupt, C.; Ambacher, O.
In: 2011 IEEE CSIC Symposium (CSICS): 2011 IEEE Compound Semiconductor Integrated Circuit Symposium.
Piscataway, NJ: IEEE, 2011, 4 S.


Simulation and analysis of low-resistance AlGaN/GaN HFET power switches.
Reiner, R.; Benkhelifa, F.; Krausse, D.; Quay, R.; Ambacher, O.
In: The 14th European Conference on Power Electronis and Applications (EPE 2011), 1-10


Device and design optimization for AlGaN/GaN X-band-power-amplifiers with high efficiency.
Kühn, J.; Raay, F. van; Quay, R.; Kiefer, R.; Mikulla, M.; Seelmann-Eggebert, M.; Bronner, W.; Schlechtweg, M.; Ambacher, O.; Thumm, M.
In: Journal of Infrared, Millimeter and Terahertz Waves 31 (2010), 3, 367-379; published online: 14.10.2009; DOI:10.1007/s10762-009-9583-6


GaN-based submicrometer HEMTs with lattice -matched InAlGaN barrier grown by MBE.
Lim, T.; Aidam, R.; Waltereit, P.; Henkel, T.; Quay, R.; Lozar, R.; Maier, T.; Kirste, L.; Ambacher, O.
In: IEEE Electron Device - Letters 31 (2010), 7, 671-673


Gallium Nitride RF-Devices: an overview on the development activities in Europe.
Quay, R.; Mikulla, M.
In: 2010 IEEE MTT-S (IMS 2010): 2010 International Microwave Symposium.
Piscataway, NJ: IEEE, 2010, 1234-1237


AlGaN/GaN epitaxy and technology.
Waltereit, P.; Bronner, W.; Quay, R.; Dammann, M.; Kiefer, R.; Pletschen, W.; Müller, S.; Aidam, R.; Menner, H.; Kirste, L.; Köhler, K.; Mikulla, M.; Ambacher, O.
In: International Journal of Microwave and Wireless Technologie 2 (2010), 1, 3-11


Development of rugged 2 GHz power bars delivering more than 100 W and 60% power added efficiency.
Waltereit, P.; Bronner, W.; Quay, R.; Dammann, M.; Müller, S.; Köhler, K.; Mikulla, M.; Ambacher, O.; Harm, L.; Lorenzini, M.; Rödle, T.; Riepe, K.; Bellmann, K.; Buchheim, C.; Goldhahn, R.
In: physica status solidi c 7 (2010), 10, 2398-2403


High efficiency and low leakage AlGaN/GaN HEMTs for a robust, reproducible and reliable X-band MMIC space technology.
Waltereit, P.; Bronner, W.; Kiefer, R.; Quay, R.; Kühn, J.; Raay, F. van; Dammann, M.; Müller, S.; Libal, C.; Meier, T.; Mikulla, M.; Ambacher, O.
In: CS MANTECH - Compound Semiconductor Mantech: 2010 International Conference on Compound Semiconductor MANufacturing TECHnology.
Beaverton: CS MANTECH, 2010, 137-140

Papers

2016

Performance of tri-gate AlGaN/GaN HEMTs.
Alsharef, M.; Granzner, R.; Schwierz, F.; Ture, E.; Quay, R.; Ambacher, O.
Ionescu, A. M. (Ed.) et al.: 46th European Solid State Device Research Confernce (ESSDERC 2016): ESSCIRC 2016.
Piscataway, NJ: IEEE, 2016, 4 S.


Thermal performance of high-temperature stable die-attachments for GaN HEMTs.
Bajwa, A. A.; Reiner, R.; Quay, R.; Wilde, J.
9th International Conference on Integrated Power Electronics Systems (CIPS 2016).
Berlin: VDE-Verlag, 2016, 5 S.
(ETG-Fachbericht 148).


Investigation and characterization of component building blocks to establish a European mmwave foundry process.
Brueckner, P.; Dammann, M.; Quay, R.; Mikulla, M.; Ambacher, O.
Proceedings of the 8th Workshop on Wide Bandgap Semiconductors and Components Workshop: ESA-ECSAT, Harwell, UK.
ESA Publications, 2016, 7 S.


Internally-Packaged-Matched continuous inverse Class-FI wideband GaN HPA.
Carrubba, V.; Maroldt, S.; Ture, E.; Udeh, U.; Musser, M.; Bronner, W.; Quay, R.; Ambacher, O.
11th European Microwave Integrated Circuits Conference (EuMIC) 2016: EuMW 2016.
London: Horizon House, 2016, 233-236
(European Microwave Week (EuMW) 2016).


Slew rate control of a 600 V 55 mOMEGA GaN cascode.
Endruschat, A.; Heckel, T.; Reiner, R.; Waltereit, P.; Quay, R.; Ambacher, O.; März, M.; Eckardt, B.; Frey, L.
IEEE Power Electronics Society: 4 th IEEE Workshop on Wide Bandgap Power Devices and Applications (WiPDA): Fayetteville, Arkansas, USA.
2016, 6 S.


Active multi-feed satcom systems with GaN SSPA at k-band.
Feuerschütz, P.; Rave, C.; Samis, S.; Friesicke, C.; Quay, R.; Konrath, W.; Hirche, K.; Schobert, D.; Schneider, M.; Jacob, A. F.
GeMIC 2016: German Microwave Conference.
Bochum: VDE-Verlag, 2016, 31-34


A Q-Band power amplifier MMIC using 100 nm AlGaN/GaN HEMT.
Feuerschütz, P.; Friesicke, C.; Quay, R.; Jacob, A. F.
11th European Microwave Integrated Circuits Conference (EuMIC) 2016: EuMW 2016.
London: Horizon House, 2016, 305-308
(European Microwave Week (EuMW) 2016).


A 40 dBm AlGaN/GaN HEMT power amplifier MMIC for SatCom applications at K-Band.
Friesicke, C.; Feuerschütz, P.; Quay, R.; Ambacher, O.; Jacob, A. F.
Lin, J. (Ed.) et al.: 2016 IEEE MTT-S International Microwave Symposium (IMS 2016): 22- 27 May 2016, San Francisco.
Piscataway, NJ: IEEE, 2016, 4 S.


Packaged AlGaN/GaN HEMT power bars with 900W output power and high PAE at L-Band.
Friesicke, C.; Maier. T.; Brueckner, P.; Quay, R.; Ambacher, O.
46th European Microwave Conference (EuMC) 2016.
London: Horizon House, 2016, 409-412
(European Microwave Week (EuMW) 2016).


Recent advances in power amplifier MMICs from K-band to E-band realized in european AlGaN/GaN HEMT technology.
Friesicke, C.; Ture, E.; Feuerschütz, P.; Schwantuschke, D.; Jacob, A. F.; Quay, R.; Ambacher, O.
Proceedings of the 8th Workshop on Wide Bandgap Semiconductors and Components Workshop: ESA-ECSAT, Harwell, UK.
ESA Publications, 2016, 8 S.


Poly-Silicon CMOS compatible gate module for AlGaN/GaN-on-Silicon MIS-HEMTs for power electronics applications.
Jauss, S.A.; Schwaiger, S.; Daves, W.; Ambacher, O.
Proceedings of the 28th International Symposium on Power Semiconductor Devices & ICs (ISPSD) 2016: June 12-16.
Piscataway, NJ: IEEE, 2016, 83-86


Post drain-stress behavior of AlGaN/GaN-on-Si MIS-HEMTs.
Jauss, S.A.; Kilian, S.; Schwaiger, S.; Noll, S.; Daves, W.; Ambacher, O.
Solid State Electronics 125 (2016), 125-132


Study on packaging and driver integration with GaN switches for fast switching.
Klein, K.; Hoene, E.; Reiner, R.; Quay, R.
9th International Conference on Integrated Power Electronics Systems (CIPS 2016).
Berlin: VDE-Verlag, 2016, 6 S.
(ETG-Fachbericht 148).


Heterogeneous integration of microscale gallium nitride transistors by micro-transfer-printing.
Lerner, R.; Eisenbrandt, S.; Bonafede, S.; Meitl, M. A.; Fecioru, A.; Trindade, A. J.; Reiner, R.; Waltereit, P.; Bower, C.
IEEE 66th Electronic Components and Technology Conference 2016 (ECTC).
2016, 1186-1189


Integration of GaN HEMTs onto silicon CMOS by micro transfer printing.
Lerner, R.; Eisenbrandt, S.; Bower, C.; Bonafede, S.; Fecioru, A.; Reiner, R.; Waltereit, P.
Proceedings of the 28th International Symposium on Power Semiconductor Devices & ICs (ISPSD) 2016: June 12-16.
Piscataway, NJ: IEEE, 2016, 451-454


A GaN-based 10.1MHz class-F(-1) 300 W continuous wave amplifier targeting industrial power applications.
Maier, F.; Krausse, D.; Gruner, D.; Reiner, R.; Waltereit, P.; Quay, R.; Ambacher, O.
2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS): 23-26 October, 2016.
Piscataway, NJ: IEEE, 2016, 4 S.


Single-input GaN gate driver based on depletion- mode logic integrated with a 600 V GaN-on-Si power transistor.
Mönch, S.; Kallfass, I.; Reiner, R.; Weiss, B.; Waltereit, P.; Quay, R.; Ambacher, O.
IEEE Power Electronics Society: 4 th IEEE Workshop on Wide Bandgap Power Devices and Applications (WiPDA): Fayetteville, Arkansas, USA.
2016, 6 S.


Linear temperature sensors in high-voltage GaN-HEMT power devices.
Reiner, R.; Waltereit, P.; Weiss, B.; Wespel, M.; Meder, D.; Mikulla, M.; Quay, R.; Ambacher, O.
Khaligh, A. (Ed.): Thirty First Annual IEEE Applied Power Electronics Conference and Exposition (APEC 2016): APEC 2016.
Hoes Lane: The Printing House, 2016, 2083-2086 S.


Monolithic GaN-on-Si half-bridge circuit with integrated freewheeling diodes.
Reiner, R.; Waltereit, P.; Weiss, B.; Wespel, M.; Mikulla, M.; Quay, R.; Ambacher, O.
pcim EUROPE 2016: International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management.
Berlin: VDE Verlag, 2016, 319-325


Monolithically-integrated power circuits in high-voltage GaN-on-Si heterojunction technology.
Reiner, R.; Waltereit, P.; Weiss, B.; Mönch, S.; Wespel, M.; Müller, S.; Quay, R.; Ambacher, O.
Benda, V. (Ed.) et al.: 13th International Seminar on Power Semiconductors (ISPS 2016): Prague, 31 Aug - 02 Sep 2016.
Piscataway, NJ: IEEE, 2016, 10 S.


Broadband E-band power amplifier MMIC based on an AlGaN/GaN HEMT technology with 30 dBm output power.
Schwantuschke, D.; Godejohann, B.-J.; Breuer, S.; Brueckner, P.; Mikulla, M.; Quay, R.; Ambacher, O.
2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS): 23-26 October, 2016.
Piscataway, NJ: IEEE, 2016, 4 S.


GaN-based E-band power amplifier modules.
Schwantuschke, D.; Henneberger, R.; Wagner, S.; Tessmann, A.; Kallfass, I.; Brueckner, P.; Quay, R.; Ambacher, O.
46th European Microwave Conference (EuMC) 2016.
London: Horizon House, 2016, 564-567
(European Microwave Week (EuMW) 2016).


Enhancement-Mode AlGaN/GaN FinFETs with high on/off performance in 100 nm gate length.
Ture, E.; Brueckner, P.; Quay, R.; Ambacher, O.; Alsharef, M.; Granzner, R.; Schwierz, F.
11th European Microwave Integrated Circuits Conference (EuMIC) 2016: EuMW 2016.
London: Horizon House, 2016, 61-64
(European Microwave Week (EuMW) 2016).


High-current submicrometer tri-gate GaN high-electron mobility transistors with binary and quaternary barriers.
Ture, E.; Brueckner, P.; Godejohann, B.-J.; Aidam, R.; Alsharef, M.; Granzner, R.; Schwierz, F.; Quay, R.; Ambacher, O.
Journal of the Electron Devices Society 4 (2016), 1, 1-6


Experimental analysis of the gate-leakage-induced failure mechanism in GaN HEMTs.
Unger, C.; Mocanu, M.; Pfost, M.; Waltereit, P.; Reiner, R.
International Semiconductor Conference (CAS) 2016: 10-12 Oktober 2016.
2016, 4 S.


Analysis and modeling of GaN-based multi field plate schottky power diodes.
Weiss, B.; Reiner, R.; Waltereit, P.; Quay, R.; Ambacher, O.
Workshop on Control and Modeling for Power Electronics (COMPEL).
Piscataway, NJ: IEEE, 2016, 6 S.


Soft-switching 3 MHz converter based on monolithically integrated half-bridge GaN-chip.
Weiss, B.; Reiner, R.; Waltereit, P.; Quay, R.; Ambacher, O.; Sepahvand, A.; Maksimovic, D.
IEEE Power Electronics Society: 4 th IEEE Workshop on Wide Bandgap Power Devices and Applications (WiPDA): Fayetteville, Arkansas, USA.
2016, 5 S.


Trapping effects at the drain edge in 600 V GaN-on-Si HEMTs.
Wespel, M.; Polyakov, V. M.; Dammann, M.; Reiner, R.; Waltereit, P.; Quay, R.; Mikulla, M.; Ambacher, O.
IEEE Transactions on Electron Devices 63 (2016), 2, 598-605


High voltage GaN-based schottky diodes in non-isolated LED buck converters.
Zibold, A.; Reiner, R.; Weiss, B.; Kunzer, M.; Quay, R.; Wagner, J.; Waltereit, P.; Ambacher, O.
18th European Conference on Power Electronis and Applications (EPE 2016): ECCE Europe.
2016, 9 S.

2015

With electroluminescence microcopy towards more reliable AlGaN/GaN transistors.
Baeumler, M.; Dammann, M.; Wespel, M.; George, R.; Konstanzer, H.; Maroldt, S.; Polyakov, V. M.; Müller, S.; Bronner, W.; Brueckner, P.; Benkhelifa, F.; Waltereit, P.; Quay, R.; Mikulla, M.; Wagner, J.; Ambacher, O.; Graff, A.; Altmann, F.; Simon-Najasek, M.; Lorenzini, M.; Fagerlind, M.; van der Wel, P.; Roedle, T.
Razeghi, M. et al.: Optical Sensing, Imaging, and Photon Counting: Nanostructured Devices and Applications (SPIE-Proc. Vol.9555).
2015, 95550Y-1-14
(SPIE-Proceedings).


Normally-Off AlGaN/GaN/AlGaN double heterostructure FETs with a thick undoped GaN gate layer.
Benkhelifa, F.; Müller, S.; Polyakov, V. M.; Ambacher, O.
IEEE Electron Device - Letters 36 (2015), 9, 905-907


Vertical buffer leakage and temperature effects on the breakdown performance of GaN/AlGaN HEMTs on Si substrate.
Benkhelifa, F.; Müller, S.; Polyakov, V. M.; Breuer, S.; Czap, H.; Manz, C.; Mikulla, M.; Ambacher, O.
ECS Transactions, 11 (2015), 65-70.


A dual-band UMTS/LTE highly power-efficient class-ABJ doherty GaN PA.
Carrubba, V.; Ture, E.; Maroldt, S.; Musser, M.; Raay, F. van; Quay, R.; Ambacher, O.
45th European Microwave Conference (EuMC) 2015.
London: Horizon House, 2015, 1164-1167
(European Microwave Week (EuMW) 2015).


High-efficiency, high-temperature continuous class-E sub-waveform solution AlGaN/GaN power amplifier.
Carrubba, V.; Maroldt, S.; Musser, M.; Ture, E.; Dammann, M.; van Raay, F.; Quay, R.; Brueckner, P.; Ambacher, O.
IEEE Microwave and Wireless Components Letters 25 (2015), 8, 526-528


High-gain over 30% PAE power amplifier MMICs in 100 nm GaN technology at Ka-band frequencies.
Chéron, J.; Campovecchio, M.; Quéré, R.; Schwantuschke, D.; Quay, R.; Ambacher, O.
10th European Microwave Integrated Circuits Conference (EuMIC) 2015.
London: Horizon House, 2015, 262-264
(European Microwave Week (EuMW) 2015).


Degradation of 0.25 µm GaN HEMTs under high temperature stress test.
Dammann, M.; Baeumler, M.; Brueckner, P.; Bronner, W.; Maroldt, S.; Konstanzer, H.; Wespel, M.; Quay, R.; Mikulla, M.; Graff, A.; Lorenzini, M.; Fagerlind, M.; van der Wel, P.J.; Rödle, T.
Microelectronics Reliability 55 (2015), 9-10, 1667-1671


Monolithic three-stage 6-18GHz high power amplifier with distributed interstage in GaN technology.
Dennler, P.; Maroldt, S.; Quay, R.; Ambacher, O.
10th European Microwave Integrated Circuits Conference (EuMIC) 2015.
London: Horizon House, 2015, 29-32
(European Microwave Week (EuMW) 2015).


Charge balancing in GaN-based 2-D electron gas devices employing an additional 2-D hole gas and its influence on dynamic behaviour of GaN-based heterostructure field effect transistors.
Hahn, H.; Reuters, B.; Geipel, S.; Schauerte, M.; Benkhelifa, F.; Ambacher, O.; Kalisch, H.; Vescan, A.
Journal of Applied Physics 117 (2015), 104508-1-8


Threshold voltage engineering in GaN-based HFETs: A systematic study with the threshold voltage reaching more than 2 V.
Hahn, H.; Benkhelifa, F.; Ambacher, O.; Brunner, F.; Noculak, A.; Kalisch, H.; Vescan, A.
IEEE Transactions on Electron Devices 62 (2015), 2, 538-545


Charge trapping in gate-drain access region of AlGaN/GaN MIS-HEMTs after drain stress.
Jauss, S.A.; Schwaiger, S.; Daves, W.; Noll, S.; Ambacher, O.
European Solid-State Device Research Conference (ESSDERC 2015): 45th European Solid-State Device Research Conference.
Piscataway, NJ: IEEE, 2015, 56-59


A high-power Ka-band single-pole single-throw switch MMIC using 0.25 µm GaN on SiC.
Kaleem, S.; Kühn, J.; Quay, R.; Hein, M.
Radio and Wireless Symposium (RWS 2015).
Piscataway, NJ: IEEE, 2015, 132-134


Microwave monolithic integrated gallium-nitride switches for low static power reconfigurable switch matrix with passive transparent state for power failure redundancy.
Kaleem, S.; Kühn, J.; Quay, R.; Hein, M. A.
Papapolymerou, J. (Ed.) et al.: 2015 IEEE MTT-S International Microwave Symposium (IMS 2015): 17-22 May 2015, Phoenix, AZ.
Piscataway, NJ: IEEE, 2015, 4 S.


Synchrotron white-beam x-ray topography analysis of the defect structure of HVPE-GaN substrates.
Kirste, L.; Danilewsky, A. N.; Sochacki, T.; Köhler, K.; Zajac, M.; Kucharski, R.; Bockowski, M.; McNally, P. J.
Jang, S. (Ed.) et al.: Wide Bandgap Semiconductor Materials and Devices 16 (ECS-Transactions): 227th meeting of The Electrochemical Society, in Chicago, IL.
New Jersey: The Electrochemical Society, 2015, 93-106
(ECS Transactions 66).


Admittance-voltage profiling of Al(x)Ga(1-x)N/GaN heterostructures: Frequency dependence of capacitance and conductance.
Köhler, K.; Pletschen, W.; Godejohann, B.-J.; Müller, S.; Menner, H.; Ambacher, O.
Journal of Applied Physics 118 (2015), 20, 205702-1-8


A novel broadband high-power source-pull/ load-pull concept for the HF- to UHF-range.
Maier, F.; Grede, A.; Gruner, D.; Quay, R.; Waltereit, P.; Ambacher, O.
45th European Microwave Conference (EuMC) 2015.
London: Horizon House, 2015, 1279-1282
(European Microwave Week (EuMW) 2015).


Monolithic integrated quasi-normally-off gate driver and 600 V GaN-on-Si HEMT.
Mönch, S.; Costa, M.; Barner, A.; Kallfass, I.; Reiner, R.; Weiss, B.; Waltereit, P.; Quay, R.; Ambacher, O.
3rd IEEE Workshop on Wide Bandgap Power Devices and Applications (WiPDA)
Blacksburg, Virginia, 2015, 1-6.


Quasi-normally-off GaN gate driver for high slew-rate d-mode GaN-on-si HEMTs.
Mönch, S.; Costa, M.; Barner, A.; Kallfass, I.; Reiner, R.; Weiss, B.; Waltereit, P.; Quay, R.; Ambacher, O.
Proceedings of the 27th International Symposium on Power Semiconductor Devices & ICs (ISPSD), 2015.
Piscataway, NJ: IEEE, 2015, 373-376


Integrated reverse-diodes for GaN-HEMT structures.
Reiner, R.; Waltereit, P.; Weiss, B.; Wespel, M.; Quay, R.; Schlechtweg, M.; Mikulla, M.; Ambacher, O.
Proceedings of the 27th International Symposium on Power Semiconductor Devices & ICs (ISPSD) 2015.
Piscataway, NJ: IEEE, 2015, 45-48


High-gain AlGaN/GaN HEMT single chip e-band power amplifier MMIC with 30 dBm output power.
Ture, E.; Schwantuschke, D.; Tessmann, A.; Wagner, S.; Brueckner, P.; Mikulla, M.; Quay, R.; Ambacher, O.
2015 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) 2015.
Piscataway, NJ: IEEE, 2015, DOI: 10.1109/CSICS.2015.7314510


Performance and parasitic analysis of sub-micron scaled tri-gate AlGaN/GaN HEMT design.
Ture, E.; Brueckner, P.; Raay, F. van; Quay, R.; Ambacher, O.; Alsharef, M.; Granzner, R.; Schwierz, F.
10th European Microwave Integrated Circuits Conference (EuMIC) 2015.
London: Horizon House, 2015, 97-100
(European Microwave Week (EuMW) 2015).


Monolithically-integrated mulitlevel inverter on lateral GaN-on-Si technology for high-voltage applications.
Weiss, B.; Reiner, R.; Waltereit, P.; Müller, S.; Wespel, M.; Quay, R.; Ambacher, O.
2015 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS), 2015.
Piscataway, NJ: IEEE, 2015, 1-4


Switching frequency modulation for GaN-based power converters.
Weiss, B.; Reiner, R.; Quay, R.; Waltereit, P.; Mikulla, M.; Schlechtweg, M.; Ambacher, O.
Energy Conversion Congress and Exposition (ECCE), 2015.
Piscataway, NJ: IEEE, 2015, 4361-4366


High-voltage stress time-dependent dispersion effects in AlGaN/GaN HEMTs.
Wespel, M.; Dammann, M.; Polyakov, V.; Reiner, R.; Waltereit, P.; Weiss, B.; Quay, R.; Mikulla, M.; Ambacher, O.
IEEE International Reliability Physics Symposium (IRPS) 2015.
Piscataway, NJ: IEEE, 2015, 5 S.

2014

Growth model investigation for AlN/Al(Ga)InN interface growth by plasma-assisted molecular beam epitaxy for high electron mobility transistor applications.
Aidam, R.; Diwo, E.; Godejohann, B.-J.; Kirste, L.; Quay, R.; Ambacher, O.
physica status solidi (a) (2014), DOI 10.1002/pssa.201431236, S. 1-7


Electroluminescence investigation of the lateral field distribution in AlGaN/GaN HEMTs for power applications.
Baeumler, M.; Polyakov, V. M.; Gütle, F.; Dammann, M.; Benkhelifa, F.; Waltereit, P.; Reiner, R.; Müller, S.; Wespel, M.; Quay, R.; Mikulla, M.; Wagner, J.; Ambacher, O.
Acta physica polonica A 125 (2014), 99, 8879-8882


Evaluation of local SiN(x)/GaN interface trap-density fluctuations in AlGaN/GaN HEMTs by electroluminescence microscopy.
Baeumler, M.; Polyakov, V.; Wespel, M.; Dammann, M.; Anto, R.; Waltereit, P.; Reiner, R.; Müller, S.; Quay, R.; Mikulla, M.; Wagner, J.; Ambacher, O.
WOCSDICE-EXMATEC 2014: 38th Workshop on Compound Semiconductor Devices and Integrated Circuits.
2014, 2 S.


Assembly and packaging technologies for high-temperature and high-power GaN HEMTs.
Bajwa, A. A.; Qin, Y.; Wilde, J.; Reiner, R.; Waltereit, P.; Quay, R.
IEEE 64th Electronic Components and Technology Conference 2014 (ECTC).
2014, 8 S.


Analysis and performance of drain bias "in-dependent" class-J power amplifier.
Carrubba, V.; Ture, E.; Quay, R.; Raay, F. van; Musser, M.; Ambacher, O.
Asia-Pacific Microwave Conference (APMC 2014).
2014, 998-1000


Realization of a 30-W highly efficient and linear reconfigurable dual-band power amplifier using the continuous mode approach.
Carrubba, V.; Maroldt, S.; Musser, M.; Walcher, H.; Raay, F. van; Quay, R.; Ambacher, O.; Wiegner, D.; Seyfried, U.; Bohn, T.; Pascht, A.
International Journal of Microwave and Wireless Technologie 6 (2014), 2, 115-128


Source/load pull investigation of AlGaN/GaN power transistors with ultra-high efficiency.
Carrubba, V.; Quay, R.; Maroldt, S.; Musser, M.; Raay, F. van; Ambacher, O.
German Microwave Conference (GeMIC) 2014.
Berlin: VDE-Verlag, 2014, 4 S.
(ITG-Fachberichte 246).


Reliability of GaN HEMTs with a 100 nm gate length under DC-stress tests.
Dammann, M.; Baeumler, M.; Anto, R.; Konstanzer, H.; Brueckner, P.; Polyakov, V.; Wespel, M.; Müller, S.; Schwantuschke, D.; Maroldt, S.; Quay, R.; Mikulla, M.; Ambacher, O.
IEEE International Integrated Reliability Workshop 2014 (IRW 2014).
Piscataway, NJ: IEEE, 2014, 3 S.


Watt-level non-uniform distributed 6-37 GHz power amplifier MMIC with dual-gate driver stage in GaN technology.
Dennler, P.; Quay, R.; Brueckner, P.; Schlechtweg, M.; Ambacher, O.
IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications (PAWR), 2014.
Piscataway, NJ: IEEE, 2014, 37-39


The Sky's the Limit.
Emrick, R.; Cruz, P.; Carvalho, N. B.; Gao, S.; Quay, R.; Waltereit, P.
IEEE microwave magazine 15 (2014), 2, 65-78


Comparison of second-harmonic matching of AlGaN/GaN HEMTs at K-band.
Friesicke, C.; Quay, R.; Jacob, A. F.
9th European Microwave Integrated Circuits Conference (EuMIC) 2014: EuMW 2014.
London: Horizon House, 2014, 400-403
(European Microwave Week (EuMW) 2014).


K-Band power amplifiers in a 100 nm GaN HEMT microstrip line MMIC technology.
Friesicke, C.; Jacob, A. F.; Quay, R.
20th International Conference on Microwaves, Radar and Wireless Communications (MIKON 2014).
Piscataway, NJ: IEEE, 2014, 4 S.


Systematic study of steps towards achieving enhancement mode GaN-based HFETs.
Hahn, H.; Benkhelifa, F.; Ambacher, O.; Noculak, A.; Kalisch, H.; Vescan, A.
Compound Semiconductor Week 2014 (CSW 2014).
2014, 2 S.


Threshold voltage behaviour in GaN-based MIS-HFETs by thickness variation of atomic layer deposited AlO(x).
Hahn, H.; Benkhelifa, F.; Ambacher, O.; Kalisch, H.; Vescan, A.
18th Workshop on Dielectrics in Microelectronics WoDiM 2014.
2014, 2 S.


Threshold voltage engineering in GaN-based HFETs: A systematic study with the threshold voltage reaching more than 2 V.
Hahn, H.; Benkhelifa, F.; Ambacher, O.; Brunner, F.; Noculak, A.; Kalisch, H.; Vescan, A.
IEEE Transactions on Electron Devices (2014), DOI: 10.1109/TED.2014.2381292, published online: 30 december 2014, S.1-8


High linearity active GaN-HEMT down-converter MMIC for E-band radar applications.
Kallfass, I.; Eren, G.; Weber, R.; Wagner, S.; Schwantuschke, D.; Quay, R.; Ambacher, O.
9th European Microwave Integrated Circuits Conference (EuMIC) 2014: EuMW 2014.
London: Horizon House, 2014, 128-131
(European Microwave Week (EuMW) 2014).


Active harmonic source-/load-pull measurements of AlGaN/GaN HEMTs at X-band frequencies.
Maier. T.; Carrubba, V.; Quay, R.; Raay, F. van; Ambacher, O.
83rd ARFTG Microwave Measurement Conference: Microwave Measurements for Emerging Technologies.
Piscataway, NJ: IEEE, 2014, 1-4


A microwave high-power GaN transistor with highly-integrated active digital switch-mode driver circuit.
Maroldt, S.; Brueckner, P.; Quay, R.; Ambacher, O.
2014 International Microwave Symposium (IMS 2014): 2014 IEEE MTT-S.
Piscataway, NJ: IEEE, 2014, 1-4


Manga: Manufacturable GaN SiC substates and GaN Epi-Wafer supply chain.
Mikulla, M.; Stockmeier, M.; Magnussen, B.; Poisson, M.-A.; Zanoni, E.; Kuball, M.
7th Wide Band Gap (WBG) Semiconductor and Components Workshop: Workshop Proceedings.
2014, 45-50


Manga: Manufacturable GaN SiC substrates and GaN epi wafer supply chain.
Mikulla, M.; Storm, S.; Henelius, N.; Poisson, M.-A.; Zanoni, E.; Kuball, M.
9th European Microwave Integrated Circuits Conference (EuMIC) 2014: EuMW 2014.
London: Horizon House, 2014, 221-224
(European Microwave Week (EuMW) 2014).


X-Band high-efficiency GaAs MMIC PA.
Pereira, A.; Parker, A.; Heimlich, M.; Weste, N.; Quay, R.; Carrubba, V.
15th Annual Wireless and Microwave Technology Conference 2014 (Wamicon): im Rahmen von: IEEE MTT-S International Microwave Symposium (IMS).
Piscataway, NJ: IEEE, 2014, 1-4


Advanced GaN/(In)AlGaN MMICs for applications in space from K-band to W-band frequencies.
Quay, R.; Schwantuschke, D.; Brueckner, P.; Chéron, J.; Dammann, M.; Mikulla, M.; Ambacher, O.
7th Wide Band Gap (WBG) Semiconductor and Components Workshop: Workshop Proceedings.
2014, 133-136


Automatic extraction of analytical large-signal FET models with parameter estimation by function decomposition.
Raay, F. van; Quay, R.; Seelmann-Eggebert, M.; Schwantuschke, D.; Peschel, D.; Schlechtweg, M.; Ambacher, O.
9th European Microwave Integrated Circuits Conference (EuMIC) 2014: EuMW 2014.
London: Horizon House, 2014, 202-205
(European Microwave Week (EuMW) 2014).


Novel layout and packaging for lateral, low-resistance GaN-on-Si power transistors.
Reiner, R.; Waltereit, P.; Benkhelifa, F.; Walcher, H.; Quay, R.; Schlechtweg, M.; Ambacher, O.
8th International Conference on Integrated Power Electronics Systems (CIPS 2014).
Berlin: VDE-Verlag, 2014, 5 p
(ETG-Fachbericht141 141).


Q- and E-band amplifier MMICs for satellite communication.
Schwantuschke, D.; Aja, B.; Seelmann-Eggebert, M.; Quay, R.; Leuther, A.; Brueckner, P.; Schlechtweg, M.; Mikulla, M.; Kallfass, I.; Ambacher, O.
2014 International Microwave Symposium (IMS 2014): 2014 IEEE MTT-S.
Piscataway, NJ: IEEE, 2014, 1-4


Broadband 1.7-2.8 GHz high-efficiency (58%), high-power (43 dBm) class-BJ GaN power amplifier Including package engineering.
Ture, E.; Carrubba, V.; Maroldt, S.; Musser, M.; Walcher, H.; Quay, R.; Ambacher, O.
9th European Microwave Integrated Circuits Conference (EuMIC) 2014: EuMW 2014.
London: Horizon House, 2014, 345-348
(European Microwave Week (EuMW) 2014).


Large-area GaN-on-Si HFET power devices for highly-efficient, fast-switching converter applications.
Waltereit, P.; Reiner, R.; Wespel, M.; Weiss, B.; Czap, H.; Dammann, M.; Müller, S.; Quay, R.; Mikulla, M.; Ambacher, O.
7th Wide Band Gap (WBG) Semiconductor and Components Workshop: Workshop Proceedings.
2014, 83-88


A new approach for GaN normally-off power transistors: Lateral recess for positive threshold voltage.
Waltereit, P.; Leuther, A.; Rüster, J.; Czap, H.; Preschle, M.; Iannucci, R.; Müller, S.; Mikulla, M.; Ambacher, O.
2014 International Conference on Compound Semiconductor MANufacturing TECHnology (CS MANTECH).
2014, 141-144


A 92 GHz GaN HEMT voltage-controlled oscillator MMIC.
Weber, R.; Schwantuschke, D.; Brueckner, P.; Quay, R.; Raay, F. van; Ambacher, O.
2014 International Microwave Symposium (IMS 2014): 2014 IEEE MTT-S.
Piscataway, NJ: IEEE, 2014, 1-4


Characterization of AlGaN/GaN-on-Si HFETs in high-power converter applications.
Weiss, B.; Reiner, R.; Quay, R.; Waltereit, P.; Müller, S.; Benkhelifa, F.; Mikulla, M.; Schlechtweg, M.; Ambacher, O.
The 16h European Conference on Power Electronis and Applications (EPE 2014): ECCE Europe.
2014, 1-10


Influence of surface states on the voltage robustness of AlGaN/GaN HFET power devices.
Wespel, M.; Dammann, M.; Baeumler, M.; Polyakov, V. M.; Reiner, R.; Waltereit, P.; Quay, R.; Mikulla, M.; Ambacher, O.
JEDEC: 29th Annual JEDEC ROCS Workshop 2014: (formerly the GaAs REL Workshop).
Arlington, VA: JEDEC, 2014, 57-61


Influence of surface states on the voltage robustness of AlGaN/GaN HFET power devices.
Wespel, M.; Baeumler, M.; Polyakov, V.; Dammann, M.; Reiner, R.; Waltereit, P.; Quay, R.; Mikulla, M.; Ambacher, O.
Microelectronics Reliability 54 (2014), 2656-2661

2013

Deep-level characterization in GaN HEMTs-part I: Advantages and limitations of drain current transient measurements.
Bisi, D.; Meneghini, M.; Santi, C. de; Chini, A.; Dammann, M.; Brueckner, P.; Mikulla, M.; Meneghesso, G.; Zanoni, E.
IEEE Transactions on Electron Devices 60 (2013), 10, 3166-3175


Class-BJ power amplifier modes: The IMD behavior of reactive terminations.
Carrubba, V.; Maroldt, S.; Quay, R.; Ambacher, O.
43rd European Microwave Conference (EuMC) 2013.
London: Horizon House, 2013, 1391-1394
(European Microwave Week 2013).


Realization of a 30-W highly efficient and linear reconfigurable dual-band power amplifier using the continuous mode approach.
Carrubba, V.; Maroldt, S.; Musser, M.; Walcher, H.; Raay, F. van; Quay, R.; Ambacher, O.; Wiegner, D.; Seyfried, U.; Bohn, T.; Pascht, A.
International Journal of Microwave and Wireless Technologie (2013), 26.11.2013, doi:10.1017/S1759078713000937


High-efficiency power amplifier MMICs in 100 nm GaN technology at Ka-band frequencies.
Chéron, J.; Campovecchio, M.; Quéré, R.; Schwantuschke, D.; Quay, R.; Ambacher, O.
8th European Microwave Integrated Circuits Conference (EuMIC) 2013: EuMIC 2013.
London: Horizon House, 2013, 492-495
(European Microwave Week 2013).


Application of GaN FET in 1MHz large signal bandwidth power supply for radio frequency power amplifier.
Cucak, D.; Vasic, M.; Garcia, O.; Oliver, J.; Alou, P.; Cobos, J. A.; Tadjer, M.; Calle, F.; Benkhelifa, F.; Reiner, R.; Waltereit, P.; Müller, S.
IEEE Applied Power Electronics Conference and Exposition (APEC) 2013: APEC 2013.
Piscataway, NJ: IEEE, 2013, 664-671


Novel semi-reactively-matched multistage broadband power amplifier architecture for monolithic ICs in GaN technology.
Dennler, P.; Quay, R.; Ambacher, O.
2013 International Microwave Symposium (IMS 2013): 2013 IEEE MTT-S.
Piscataway, NJ: IEEE, 2013, 4 S.


AlGaN/GaN-based variable gain amplifiers for W-band operation.
Diebold, S.; Müller, D.; Schwantuschke, D.; Wagner, S.; Quay, R.; Zwick, T.; Kallfass, I.
2013 International Microwave Symposium (IMS 2013): 2013 IEEE MTT-S.
Piscataway, NJ: IEEE, 2013, 4 S.


RF MEMS variable matching networks for multi-band and multi-mode GaN power amplifiers.
Figur, S. A.; Ziegler, V.; Raay, F. van; Quay, R.; Vietzorreck, L.
8th European Microwave Integrated Circuits Conference (EuMIC) 2013: EuMIC 2013.
London: Horizon House, 2013, 324-327
(European Microwave Week 2013).


A linear 4W power amplifier at K-Band using 250nm AlGaN/GaN HEMTs.
Friesicke, C.; Quay, R.; Rohrdantz, B.; Jacob, A. F.
8th European Microwave Integrated Circuits Conference (EuMIC) 2013: EuMIC 2013.
London: Horizon House, 2013, 157-160
(European Microwave Week 2013).


Guest Editorial Special Issue on GaN Electronic Devices.
Ghione, G.; Chen, K. J.; Egawa, T.; Meneghesso, G.; Palacios, T.; Quay, R.
IEEE Transactions on Electron Devices 60 (2013), 10, 2975-2981


GaN-on-Si enhancement mode metal insulator semiconductor heterostructure field effect transistor with on-current of 1.35A/mm.
Hahn, H.; Benkhelifa, F.; Ambacher, O.; Alam, A.; Heuken, M.; Yacoub, H.; Noculak, A.; Kalisch, H.; Vescan, A.
Japanese Journal of Applied Physics 52 (2013), 090204-1-4


N-type conductivity and properties of carbon-doped InN(0001) films grown by molecular beam epitaxy.
Himmerlich, M.; Knübel, A.; Aidam, R.; Kirste, L.; Eisenhardt, A.; Krischok, S.; Pezoldt, J.; Schley, P.; Sakalauskas, E.; Goldhahn, R.; Félix, R.; Mánuel, J.M.; Morales, F. M.; Carvalho, D.; Ben, T.; García, R.; Koblmüller, G.
Journal of Applied Physics 113 (2013), 033501-1-10


Statistical harmonic load termination analysis of switch-mode power amplifiers employing bandpass-pulse-length modulation.
Krause, S.; Maroldt, S.; Zech, C.; Quay, R.; Hein, M.
8th European Microwave Integrated Circuits Conference (EuMIC) 2013: EuMIC 2013.
London: Horizon House, 2013, 340-343
(European Microwave Week 2013).


(In)AlGaN heterojunction field effect transistors and circuits for high-power applications at microwave and millimeter-wave frequencies.
Maroldt, S.; Quay, R.; Dennler, P.; Schwantuschke, D.; Musser, M.; Dammann, M.; Aidam, R.; Waltereit, P.; Tessmann, A.; Ambacher, O.
Japanese Journal of Applied Physics 52 (2013), 8, 08JN13-1-6


QFN-packaged highly-linear cascode GaN LNA MMIC from 0.5 to 3 GHz.
Maroldt, S.; Aja, B.; Raay, F. van; Krause, S.; Brueckner, P.; Quay, R.
8th European Microwave Integrated Circuits Conference (EuMIC) 2013: EuMIC 2013.
London: Horizon House, 2013, 428-431
(European Microwave Week 2013).


High-speed technologies based on III-V compound semiconductors at Fraunhofer IAF.
Mikulla, M.; Leuther, A.; Brueckner, P.; Schwantuschke, D.; Tessmann, A.; Schlechtweg, M.; Ambacher, O.; Caris, M.
8th European Microwave Integrated Circuits Conference (EuMIC) 2013: EuMIC 2013.
London: Horizon House, 2013, 169-171
(European Microwave Week 2013).


Individual source vias for GaN HEMT power bars.
Musser, M.; Raay, F. van; Brueckner, P.; Bronner, W.; Quay, R.; Mikulla, M.; Ambacher, O.
8th European Microwave Integrated Circuits Conference (EuMIC) 2013: EuMIC 2013.
London: Horizon House, 2013, 184-187
(European Microwave Week 2013).


A 65 - 100 GHz impedance transforming hybrid coupler for a V- /W-Band AlGaN/GaN MMIC.
Pahl, P.; Diebold, S.; Schwantuschke, D.; Wagner, S.; Lozar, R.; Quay, R.; Kallfass, I.; Zwick, T.
43rd European Microwave Conference (EuMC) 2013.
London: Horizon House, 2013, 1383-1386
(European Microwave Week 2013).


Recent developments of gallium nitride monolithically-microwave integrated circuits for space.
Quay, R.; Waltereit, P.
International Conference on Electromagnetics in Advanced Applications (ICEAA) 2013: ICEAA 2013.
Piscataway, NJ: IEEE, 2013, 919-922.


Submicron-AlGaN/GaN MMICs for space applications.
Quay, R.; Waltereit, P.; Kühn, J.; Brueckner, P.; van Heijningen, M.; Jukkala, P.; Hirche, K.; Ambacher, O.
2013 International Microwave Symposium (IMS 2013): 2013 IEEE MTT-S.
Piscataway, NJ: IEEE, 2013, 4 S.


Integral transform and state modeling of 0.1 µm AlGaN/GaN HEMTs for pulsed-RF and CW operation.
Raay, F. van; Quay, R.; Seelmann-Eggebert, M.; Schwantuschke, D.; Maier. T.; Schlechtweg, M.; Ambacher, O.
8th European Microwave Integrated Circuits Conference (EuMIC) 2013: EuMIC 2013.
London: Horizon House, 2013, 288-291
(European Microwave Week 2013).


New low-frequency dispersion model for AlGaN/GaN HEMTs using integral transform and state description.
Raay, F. van; Quay, R.; Seelmann-Eggebert, M.; Schwantuschke, D.; Peschel, D.; Schlechtweg, M.; Ambacher, O.
IEEE Transactions on Microwave Theory and Techniques 61 (2013), 1, 154-167


Benchmarking of large-area GaN-on-Si HFET power devices for highly-efficient, fast-switching converter applications.
Reiner, R.; Waltereit, P.; Benkhelifa, F.; Müller, S.; Wespel, M.; Quay, R.; Schlechtweg, M.; Mikulla, M.; Ambacher, O.
2013 IEEE CSIC Symposium (CSICS): IEEE Compound Semiconductor Integrated Cicuit Symposium.
Piscataway, NJ: IEEE, 2013, 1-4


Characterization of Al(2)O(3)/GaAs interfaces and thin films prepared by atomic layer deposition.
Sah, R. E.; Tegenkamp, C.; Baeumler, M.; Bernhardt, F.; Driad, R.; Mikulla, M.; Ambacher, O.
Journal of Vacuum Science and Technology 31 (2013), 4, 04D111-1-7


Ultra-wideband GaN MMIC chip set and high power amplifier module for multi-function defense AESA applications.
Schmid, U.; Sledzik, H.; Schuh, P.; Schroth, J.; Oppermann, M.; Brueckner, P.; Raay, F. van; Quay, R.; Seelmann-Eggebert, M.
IEEE Transactions on Microwave Theory and Techniques 61 (2013), 8, 3043-3051


A fully scalable compact Small-Signal Modeling Approach for 100 nm AlGaN/GaN HEMTs.
Schwantuschke, D.; Seelmann-Eggebert, M.; Brueckner, P.; Quay, R.; Mikulla, M.; Ambacher, O.; Kallfass, I.
8th European Microwave Integrated Circuits Conference (EuMIC) 2013: EuMIC 2013.
London: Horizon House, 2013, 284-287
(European Microwave Week 2013).


High-gain millimeter-wave AlGaN/GaN transistors.
Schwantuschke, D.; Brueckner, P.; Quay, R.; Mikulla, M.; Ambacher, O.
IEEE Transactions on Electron Devices 60 (2013), 10, 3112-3118


Implantation studies on silicon-doped GaN.
Simon, R.; Vianden, R.; Köhler, K.
Journal of Electronics Materials 42 (2013), 1, 21-25


A package-integrated 50 W high-efficiency RF CMOS-GaN class-E power amplifier.
van der Heijden, M. P.; Acar, M.; Maroldt, S.
2013 International Microwave Symposium (IMS 2013): 2013 IEEE MTT-S.
Piscataway, NJ: IEEE, 2013, 3 S.


Development of an epitaxial growth process on European SiC substrates for a low leakage GaN HEMT technology with power added efficiencies around 65%.
Waltereit, P.; Müller, S.; Kirste, L.; Prescher, M.; Storm, S.; Weber, A.; Schauwecker, B.; Hosch, M.; Splettstößer, J.
2013 International Conference on Compound Semiconductor MANufacturing TECHnology (CS MANTECH).
2013, 121-124


Effiziente Energiewandlung mit GaN-basierter Leistungselektronik: Efficient energy conversion using GaN based power electronics.
Waltereit, P.; Reiner, R.; Müller, S.; Czap, H.; Mikulla, M.; Ambacher, O.
MikroSystemTechnik Kongress 2013: Von Bauelementen zu Systemen.
Berlin: VDE-Verlag, 2013, 320-323


GaN HEMTs and MMICs for space applications.
Waltereit, P.; Bronner, W.; Quay, R.; Dammann, M.; Cäsar, M.; Müller, S.; Reiner, R.; Brueckner, P.; Kiefer, R.; Raay, F. van; Kühn, J.; Musser, M.; Haupt, C.; Mikulla, M.; Ambacher, O.
Semiconductor Science and Technology 28 (2013), 074010 (7pp)


GaN-based high voltage transistors for efficient power switching.
Waltereit, P.; Reiner, R.; Czap, H.; Peschel, D.; Müller, S.; Quay, R.; Mikulla, M.; Ambacher, O.
physica status solidi c 10 (2013), 5, 831-834


Recent developments in GaN HEMTs and MMICs for high power electronics.
Waltereit, P.; Bronner, W.; Brueckner, P.; Dammann, M.; Reiner, R.; Müller, S.; Kühn, J.; Musser, M.; Quay, R.; Mikulla, M.; Ambacher, O.
The Japan Society of Applied Physics: Solid State Devices and Materials (SSDM 2013): Extended Abstracts of the 2013 International Conference.
Tokyo: Japan Society of Applied Physics, 2013, 3 S.


A 67 GHz GaN voltage-controlled oscillator MMIC with high output power.
Weber, R.; Schwantuschke, D.; Brueckner, P.; Quay, R.; Mikulla, M.; Ambacher, O.; Kallfass, I.
IEEE Microwave and Wireless Components Letters 23 (2013), 7, 374-376 S.


Simple and low-cost tracking generator design in envelope tracking radio frequency power amplifier system for WCDMA applications.
Yusoff, Z.; Lees, J.; Chaudhary, M. A.; Carrubba, V.; Choi, H.; Tasker, P.; Cripps, S. C.
IET Microwaves, Antennas & Propagation 7 (2013), 10, 802-808

2012

Strain control of AlGaN/GaN high electron mobility transistor structures on silicon (111) by plasma assisted molecular beam epitaxy.
Aidam, R.; Diwo, E.; Rollbühler, N.; Kirste, L.; Benkhelifa, F.
Journal of Applied Physics 111 (2012), 114516-1-6


The coexistence of two-dimensional electron and hole gases in GaN-based heterostructures.
Al Mustafa, N.; Granzner, R.; Polyakov, V. M.; Racko, J.; Mikolasek, M.
Journal of Applied Physics 111 (2012), 044512-1-6


Development of 100 nm gate AlGaN/GaN HEMT and MMIC technology suitable for mm-wave applications.
Brueckner, P.; Kiefer, R.; Haupt, C.; Leuther, A.; Müller, S.; Quay, R.; Schwantuschke, D.; Mikulla, M.; Ambacher, O.
physica status solidi c 9 (2012), 3-4, 903-906


The Continuous Inverse Class-F Mode With Resistive Second-Harmonic Impedance.
Carrubba, V.; Akmal, M.; Quay, R.; Lees, J.; Benedikt, J.; Cripps, S. C.; Tasker, P. J.
IEEE Transactions on Microwave Theory and Techniques 60 (2012), 6, 1928-1936


Continuous-classF3 power amplifier mode varying simultaneously first 3 harmonic impedances.
Carrubba, V.; Quay, R.; Schlechtweg, M.; Ambacher, O.; Akmal, M.; Lees, J.; Benedikt, J.; Tasker, P. J.; Cripps, S. C.
2012 IEEE MTT-S (IMS 2012) - Workshops: 2012 International Microwave Symposium.
Piscataway, NJ: IEEE, 2012, 3 S.


Dual-band class-ABJ AlGaN/GaN high power amplifier.
Carrubba, V.; Maroldt, S.; Musser, M.; Walcher, H.; Schlechtweg, M.; Quay, R.; Ambacher, O.
42th European Microwave Conference (EuMC) 2012.
2012, 1015-1018
(European Microwave Week 2012).


Generation of traps in AlGaN/GaN HEMTs during RF-and DC-stress test.
Cäsar, M.; Dammann, M.; Polyakov, V. M.; Waltereit, P.; Bronner, W.; Baeumler, M.; Quay, R.; Mikulla, M.; Ambacher, O.
Institute of Electrical and Electronics Engineers -IEEE-:
IEEE International Reliability Physics Symposium 2012: IRPS Digital Archieve.
Piscataway, NJ: IEEE, 2012, 5 S.


Reverse bias stress test of GaN HEMTs for high-voltage switching applications.
Dammann, M.; Czap, H.; Rüster, J.; Baeumler, M.; Gütle, F.; Waltereit, P.; Benkhelifa, F.; Reiner, R.; Cäsar, M.; Konstanzer, H.; Müller, S.; Quay, R.; Mikulla, M.; Ambacher, O.
2012 IEEE International Integrated Reliability Workshop: Final Report.
IEEE Electron Devices Society, 2012, 105-108


8-42 GHz GaN non-uniform distributed power amplifier MMICs in microstrip technology.
Dennler, P.; Schwantuschke, D.; Quay, R.; Ambacher, O.
2012 IEEE MTT-S (IMS 2012) - Workshops: 2012 International Microwave Symposium.
Piscataway, NJ: IEEE, 2012, 3 S.


An efficient AlGaN/GaN HEMT power amplifier MMIC at K-band.
Friesicke, C.; Kühn, J.; Brueckner, P.; Quay, R.; Jacob, A. F.
Proceedings of the 7th European Microwave Integrated Circuits Conference (EuMIC) 2012: European Microwave Week.
2012, 131-134
(European Microwave Week 2012).


Microscopic degradation analysis of RF-stressed AlGaN/GaN HEMTs.
Gütle, F.; Baeumler, M.; Dammann, M.; Cäsar, M.; Walcher, H.; Waltereit, P.; Bronner, W.; Müller, S.; Kiefer, R.; Quay, R.; Mikulla, M.; Ambacher, O.; Graff, A.; Altmann, F.; Simon, M.
Materials Science Forum 725 (2012), 79-82


Radiative inter-valley transitions as a dominant emission mechanism in AlGaN/GaN high electron mobility transistors.
Gütle, F.; Polyakov, V. M.; Baeumler, M.; Benkhelifa, F.; Müller, S.; Dammann, M.; Cäsar, M.; Quay, R.; Mikulla, M.; Wagner, J.; Ambacher, O.
Semiconductor Science and Technology 27 (2012), 12, 125003-1-7


First polarization-engineered compressively strained AlInGaN barrier enhancement-mode MISHFET.
Hahn, H.; Reuters, B.; Wille, A.; Ketteniss, N.; Benkhelifa, F.; Ambacher, O.; Kalisch, H.; Vescan, A.
Semiconductor Science and Technology 27 (2012), 5, 6 S.


A high gain SiGe-GaN switching power amplifier in the GHz-range.
Heck, S.; Bräckle, A.; Berroth, M.; Maroldt, S.; Quay, R.
13th Annual Wireless and Microwave Technology Conference 2012 (Wamicon).
Piscataway, NJ: IEEE, 2012, 4 S.


94 GHz power amplifier MMIC development in state of the art MHEMT and AlGaN/GaN technology.
Heijningen, M. van; Bent, G. van der; Rodenburg, M.; Vliet, F. E. van; Quay, R.; Brueckner, P.; Schwantuschke, D.; Jukkala, P.; Narhi, T.
Microwave Technology and Techniques Workshop 2012.
ESA Publications, 2012, 8 S.


AlGaN/GaN power amplifiers for ISM applications.
Krausse, D.; Benkhelifa, F.; Reiner, R.; Quay, R.; Ambacher, O.
Solid State Electronics 74 (2012), 108-113


Influence of plasma treatments on the properties of GaN/AlGaN/GaN HEMT structures.
Linkohr, S.; Pletschen, W.; Polyakov, V. M.; Himmerlich, M.; Lorenz, P.; Krischok, S.; Kirste, L.; Müller, S.; Ambacher, O.; Cimalla, V.
physica status solidi c 9 (2012), 3-4, 1096-1098


Plasma affected 2DEG properties on GaN/AlGaN/GaN HEMTs.
Linkohr, S.; Pletschen, W.; Kirste, L.; Himmerlich, M.; Lorenz, P.; Krischok, S.; Polyakov, V. M.; Müller, S.; Ambacher, O.; Cimalla, V.
physica status solidi c 9 (2012), 3-4, 938-941


Threading dislocation propagation in AlGaN/GaN based HEMT structures grown on Si (111) by plasma assisted molecular beam epitaxy.
Mánuel, J.M.; Morales, F. M.; García, R.; Aidam, R.; Kirste, L.; Ambacher, O.
Journal of Crystal Growth 357 (2012), 35-41


An integrated 12 Gbps switch-mode driver MMIC with 5 V(PP) for digital Transmitters in 100 nm GaN technology.
Maroldt, S.; Brueckner, P.; Quay, R.; Ambacher, O.; Maier, S.; Wiegner, D.; Pascht, A.
Proceedings of the 7th European Microwave Integrated Circuits Conference (EuMIC) 2012: European Microwave Week.
2012, 115-118
(European Microwave Week 2012).


Advances on GaN mm-wave power amplifiers to 100 GHz.
Quay, R.; Brueckner, P.; Heijningen, M. van; Mikulla, M.; Ambacher, O.
6th Space Agency - MOD Workshop on Wide Bandgap Semiconductors and Components: ESA-ESTEC.
ESA Publications, 2012, 3 S.


Microwave and millimeter wave integrated circuits MTT-6: the RF core chips of the 21st century: From the Guest Editors' Desk.
Quay, R.; Kissinger, D.
IEEE microwave magazine 13 (2012), 6, S. 3


Novel III-N devices: Progress on GaN-based DC-DC converters for space.
Quay, R.; Waltereit, P.; Benkhelifa, F.; Reiner, R.; Mikulla, M.; Ambacher, O.
6th Space Agency - MOD Workshop on Wide Bandgap Semiconductors and Components: ESA-ESTEC.
ESA Publications, 2012, 5 S.


New low-frequency dispersion model for AlGaN/GaN HEMTs using integral transform and state description.
Raay, F. van; Quay, R.; Seelmann-Eggebert, M.; Schwantuschke, D.; Peschel, D.; Schlechtweg, M.; Ambacher, O.
IEEE Transactions on Microwave Theory and Techniques published online: 24.09.2012; DOI: 10.1109/TMTT.2012.2222434 (2012), 99, 14 S.


Fractal structures for low-resistance large area AlGaN/GaN power transistors.
Reiner, R.; Waltereit, P.; Benkhelifa, F.; Müller, S.; Walcher, H.; Wagner, S.; Quay, R.; Schlechtweg, M.; Ambacher, O.
IEEE, New York: 24th International Symposium on Power Semiconductor Devices and ICs (ISPSD 2012).
Piscataway, NJ: IEEE, 2012, 341-344


Semipolar GaInN quantum well structures on large area substrates.
Scholz, F.; Schwaiger, S.; Däubler, J.; Tischer, I.; Thonke, K.; Neugebauer, S.; Metzner, S.; Bertram, F.; Christen, J.; Lengner, H.; Thalmair, J.; Zweck, J.
physica status solidi (b) 249 (2012), 3, 464-467


GaN-based millimeter-wave monolithic integrated circuits.
Schwantuschke, D.; Kallfass, I.; Quay, R.; Ambacher, O.
19th International Conference on Microwaves, Radar and Wireless Communications (MIKON 2012): May 21-23, Warsaw/Poland.
Piscataway, NJ: IEEE, 2012, 97-98


A U-band broadband power amplifier MMIC in 100 nm AlGaN/GaN HEMT technology.
Schwantuschke, D.; Brueckner, P.; Quay, R.; Mikulla, M.; Ambacher, O.; Kallfass, I.
Proceedings of the 7th European Microwave Integrated Circuits Conference (EuMIC) 2012: European Microwave Week.
2012, 703-706
(European Microwave Week 2012).


Implantation studies on silicon-doped GaN.
Simon, R.; Vianden, R.; Köhler, K.
Journal of Electronics Materials (2012), published online: 20.10.2012, DOI: 10.1007/s11664-012-2278-0, 5 S.


W-band power amplifier MMIC with 400 mW output power in 0.1 µm AlGaN/GaN technology.
van Heijningen, M.; Rodenburg, M.; van Vliet, F.E.; Massler, H.; Tessmann, A.; Brueckner, P.; Müller, S.; Schwantuschke, D.; Quay, R.; Narhi, T.
Proceedings of the 7th European Microwave Integrated Circuits Conference (EuMIC) 2012: European Microwave Week.
2012, 135-138
(European Microwave Week 2012).


Physics-based modeling of GaN HEMTs.
Vitanov, S.; Palankovski, V.; Maroldt, S.; Quay, R.; Murad, S.; Rödle, T.; Selberherr, S.
IEEE Transactions on Electron Devices 59 (2012), 3, 685-693


GaN-based high-frequency devices and circuits: A Fraunhofer perspective.
Waltereit, P.; Bronner, W.; Quay, R.; Dammann, M.; Cäsar, M.; Müller, S.; Raay, F. van; Kiefer, R.; Brueckner, P.; Kühn, J.; Musser, M.; Kirste, L.; Haupt, C.; Pletschen, W.; Lim, T.; Aidam, R.; Mikulla, M.; Ambacher, O.
physica status solidi (a) 209 (2012), 3, 491-496


High efficiency X-band AlGaN/GaN MMICs for space applications with lifetimes above 10(5) hours.
Waltereit, P.; Kühn, J.; Quay, R.; Raay, F. van; Dammann, M.; Cäsar, M.; Müller, S.; Mikulla, M.; Ambacher, O.; Lätti, J.; Rostewitz, M.; Hirche, K.; Däubler, J.
Proceedings of the 7th European Microwave Integrated Circuits Conference (EuMIC) 2012: European Microwave Week.
2012, 123-126
(European Microwave Week 2012).


Influence of AlGaN barrier thickness on electrical and device properties in Al0.14Ga0.86N/GaN high electron mobility transistor structures.
Waltereit, P.; Bronner, W.; Musser, M.; Raay, F. van; Dammann, M.; Cäsar, M.; Müller, S.; Kirste, L.; Köhler, K.; Quay, R.; Mikulla, M.; Ambacher, O.
Journal of Applied Physics 112 (2012), 053718-1-5


Is GaN the ideal material for space?
Waltereit, P.; Bronner, W.; Quay, R.; Dammann, M.; Cäsar, M.; Müller, S.; Reiner, R.; Brueckner, P.; Kiefer, R.; Raay, F. van; Kühn, J.; Musser, M.; Haupt, C.; Mikulla, M.; Ambacher, O.
Microwave Technology and Techniques Workshop 2012.
ESA Publications, 2012, 1-7


Trade-offs between performance and reliability on AlGaN/GaN transistors.
Waltereit, P.; Bronner, W.; Kiefer, R.; Quay, R.; Dammann, M.; Cäsar, M.; Brueckner, P.; Müller, S.; Mikulla, M.; Ambacher, O.
physica status solidi c 9 (2012), 2, 365-368

2011

From epitaxy to backside process: reproducible AlGaN/GaN HEMT technology for reliable and rugged power devices.
Bronner, W.; Waltereit, P.; Müller, S.; Dammann, M.; Kiefer, R.; Dennler, P.; Raay, F. van; Musser, M.; Quay, R.; Mikulla, M.; Ambacher, O.
2011 International Conference on Compound Semiconductor MANufacturing TECHnology (CS MANTECH).
omnipress, 2011, 3 S.


Inverse class-FJ: Experimental validation of a new PA voltage waveform family.
Carrubba, V.; Bell, J. J.; Smith, R. M.; Akmal, M.; Yusoff, Z.; Lees, J.; Benedikt, J.; Tasker, P. J.; Cripps, S. C.
Proceedings of the Asia-Pacific Microwave Conference (APMC) 2011.
New York: IEEE Press, 2011, 1254-1257


Critical factors influencing the voltage robustness of AlGaN/GaN HEMTs.
Cäsar, M.; Dammann, M.; Polyakov, V. M.; Waltereit, P.; Quay, R.; Mikulla, M.; Ambacher, O.
Microelectronics Reliability 51 (2011), 224-228


Effect of chemical surface pre-treatment on reliability of AlGaN/GaN HEMTs.
Cäsar, M.; Dammann, M.; Waltereit, P.; Bronner, W.; Baeumler, M.; Quay, R.; Mikulla, M.; Ambacher, O.
JEDEC: 26th Annual JEDEC ROCS Workshop: (formerly the GaAs REL Workshop).
Arlington, VA: JEDEC, 2011, 107-118


Reliability and degradation mechanism of 0.25 µm AlGaN/GaN HEMTs under RF stress conditions.
Dammann, M.; Baeumler, M.; Gütle, F.; Cäsar, M.; Walcher, H.; Waltereit, P.; Bronner, W.; Müller, S.; Kiefer, R.; Quay, R.; Mikulla, M.; Ambacher, O.; Graff, A.; Altmann, F.; Simon, M.
2011 IEEE International Integrated Reliability Workshop: Final Report.
IEEE Electron Devices Society, 2011, 42-46


Modeling and realization of GaN-based dual-gate HEMTs and HPA MMICs for Ku-band applications.
Dennler, P.; Raay, F. van; Seelmann-Eggebert, M.; Quay, R.; Ambacher, O.
2011 International Microwave Symposium (IEEE MTT-S): IMS 2011.
Piscataway, NJ: IEEE, 2011, 4 S.


Detailed studies of Si-doped AlGaN films grown by MOVPE.
Forghani, K.; Gharavipour, M.; Scholz, F.; Tischer, I.; Neuschl, B.; Thonke, K.; Klein, O.; Kaiser, U.; Kirste, L.; Gutt, R.
9th International Conference on Nitride Semiconductors (ICNS 9).
2011, 1-1


Influence of indium content and temperature on the coefficients in the ABC rate model.
Galler, B.; Drechsel, P.; Rode, P.; Froehlich, S.; Bergbauer, W.; Lugauer, H.; Strassburg, M.; Stauss, P.; Laubsch, A.; Wagner, J.; Hahn, B.
9th International Conference on Nitride Semiconductors (ICNS 9).
2011, 1-1


Comprehensive surface analysis of GaN-capped AlGaN/GaN high electron mobility transistors: Influence of growth method.
Gutt, R.; Himmerlich, M.; Fenske, M.; Müller, S.; Lim, T.; Kirste, L.; Waltereit, P.; Köhler, K.; Krischok, S.; Fladung, T.
Journal of Applied Physics 110 (2011), 8, 083527-1-5


Development of a high transconductance GaN MMIC technology for millimeter wave applications.
Haupt, C.; Maroldt, S.; Quay, R.; Pletschen, W.; Leuther, A.; Ambacher, O.
physica status solidi c 8 (2011), 2, 297-299


Comparison of a single and a dual-gate GaN switching-amplifier for future communication systems.
Heck, S.; Maroldt, S.; Bräckle, A.; Berroth, M.; Quay, R.
2011 International Microwave Symposium (IEEE MTT-S): IMS 2011.
Piscataway, NJ: IEEE, 2011, 4 S.


Piezoelectric Energy Harvesting using AlN-based Microstructures.
Heidrich, N.; Knöbber, F.; Sah, R. E.; Pletschen, W.; Cimalla, V.; Lebedev, V.; Ambacher, O.
9th International Conference on Nitride Semiconductors (ICNS 9).
2011, 1 S.


Multiband Doherty RF power amplifier.
Jüschke, P.; Wiegner, D.; Luz, G.; Machinal, R.; Pascht, A.; Quay, R.
IEEE Africon 2011.
Piscataway, NJ: IEEE, 2011, 5 S.


A highly linear 84 GHz low noise amplifier MMIC in AlGaN/GaN HEMT technology.
Kallfass, I.; Massler, H.; Wagner, S.; Schwantuschke, D.; Brueckner, P.; Haupt, C.; Kiefer, R.; Quay, R.; Ambacher, O.
IEEE MTT-S International Microwave Workshop on Millimeter Wave Integration Technologies (IMWS 2011).
Piscataway, NJ: IEEE, 2011, 707-710


A single-chip 77 GHz heterodyne receiver MMIC in 100 nm AlGaN/GaN HEMT technology.
Kallfass, I.; Quay, R.; Massler, H.; Wagner, S.; Schwantuschke, D.; Haupt, C.; Kiefer, R.; Ambacher, O.
2011 International Microwave Symposium (IEEE MTT-S): IMS 2011.
Piscataway, NJ: IEEE, 2011, 4 S.


Electrical properties of AlxGa1-xN/GaN heterostructures with low Al content.
Köhler, K.; Müller, S.; Waltereit, P.; Pletschen, W.; Polyakov, V. M.; Lim, T.; Kirste, L.; Menner, H.; Brueckner, P.; Ambacher, O.; Buchheim, C.; Goldhahn, R.
Journal of Applied Physics 109 (2011), 053705-1-5


AlGaN/GaN power amplifiers for ISM frequency applications.
Krausse, D.; Benkhelifa, F.; Reiner, R.; Quay, R.; Ambacher, O.
ESSCIRC 2011 / ESSDERC 2011.
Piscataway, NJ: IEEE, 2011, 283-286


Electron and hole accumulation in InN/InGaN heterostructures.
Lebedev, V.; Polyakov, V. M.; Knübel, A.; Aidam, R.; Kirste, L.; Cimalla, V.; Granzner, R.; Schwierz, F.; Ambacher, O.
physica status solidi c 8 (2011), 2, 485-487


GaN(0001)-2×2 surface states: Fingerprints of surface reconstructions from theory and experiment.
Lymperakis, L.; Himmerlich, M.; Lorenz, P.; Gutt, R.; Krischok, S.; Neugebauer, J.
9th International Conference on Nitride Semiconductors (ICNS 9).
2011, 1-1


900 MHz pulse-width-modulated class-S power amplifier with improved linearity.
Maier, S.; Wiegner, D.; Zierdt, M.; Kuebart, W.; Seyfried, U.; Haslach, C.; Pascht, A.; Maroldt, S.; Quay, R.
2011 International Microwave Symposium (IEEE MTT-S): IMS 2011.
Piscataway, NJ: IEEE, 2011, 8 S.


Simultaneous transmission of non-contiguous frequency bands for mobile radio using a pulse-width-modulated switch-mode stage.
Maier, S.; Wiegner, D.; Zierdt, M.; Seyfried, U.; Haslach, C.; Pascht, A.; Maroldt, S.; Quay, R.
Proceedings of the Asia-Pacific Microwave Conference (APMC) 2011.
New York: IEEE Press, 2011, 275-278


Growth and characterization of InAlN layers nearly lattice-matched to GaN.
Mánuel, J.M.; Morales, F. M.; Lozano, J. G.; García, R.; Lim, T.; Kirste, L.; Aidam, R.; Ambacher, O.
physica status solidi c 8 (2011), 7-8, 2500-2502


Improved Structural and Chemical Properties of Nearly Lattice-Matched Ternary and Quaternary Barriers for GaN-Based HEMTs.
Mánuel, J.M.; Morales, F. M.; García, R.; Lim, T.; Kirste, L.; Aidam, R.; Ambacher, O.
Crystal Growth & Design 11 (2011), 2588-2591


Broadband GaN-based switch-mode core MMICs with 20 W output power operating at UHF.
Maroldt, S.; Quay, R.; Haupt, C.; Ambacher, O.
2011 IEEE CSIC Symposium (CSICS): 2011 IEEE Compound Semiconductor Integrated Circuit Symposium.
Piscataway, NJ: IEEE, 2011, 4 S.


GaN HFET MMICs with integrated Schottky-diode for highly efficient digital switch-mode power amplifiers at 2 GHz.
Maroldt, S.; Quay, R.; Haupt, C.; Kiefer, R.; Wiegner, D.; Ambacher, O.
International Journal of Microwave and Wireless Technologie 3 (2011), 3, 319-327


Manga: Manufacturable GaN.
Mikulla, M.; Storm, S.; Henelius, N.; Poisson, M.-A.; Janzen, E.; Zanoni, E.; Kuball, M.
The 6th European Microwave Integrated Circuits Conference (EuMIC) 2011: European Microwave Week.
2011, 336-339
(European Microwave Week 2011).


Analysis of GaN HEMTs for broadband high-power amplifier design.
Musser, M.; Quay, R.; Raay, F. van; Mikulla, M.; Ambacher, O.
The 6th European Microwave Integrated Circuits Conference (EuMIC) 2011: European Microwave Week.
2011, 128-131
(European Microwave Week 2011).


Effect of In incorporation in the QW active region on the efficiency of AlGaN-based UV-LEDs.
Passow, T.; Gutt, R.; Kunzer, M.; Kirste, L.; Pletschen, W.; Köhler, K.; Wagner, J.
9th International Conference on Nitride Semiconductors (ICNS 9).
2011, 1 S.


Design and modelling challenges for advanced class-S digital transmitters.
Quay, R.; Maroldt, S.
Technische Universität Wien:
Integrated Nonlinear Microwave and Millimetre-wave Circuits (INMMIC): Conference Proceedings.
2011, 4 S.


Dual-Gate GaN MMICs for MM-Wave Operation.
Quay, R.; Tessmann, A.; Kiefer, R.; Maroldt, S.; Haupt, C.; Nowotny, U.; Weber, R.; Massler, H.; Schwantuschke, D.; Seelmann-Eggebert, M.; Leuther, A.; Mikulla, M.; Ambacher, O.
IEEE Microwave and Wireless Components Letters 21 (2011), 2, 95-97


Simulation and analysis of low-resistance AlGaN/GaN HFET power switches.
Reiner, R.; Benkhelifa, F.; Krausse, D.; Quay, R.; Ambacher, O.
The 14th European Conference on Power Electronis and Applications (EPE 2011).
2011, 10 S.


Sputtering of AlN on micro and nanocrystalline diamond for high frequency SAW devices.
Rodriguez-Madrid, J. G.; Iriarte, G. F.; Williams, O.; Müller-Sebert, W.; Calle, F.
9th International Conference on Nitride Semiconductors (ICNS 9).
2011, 1 S.


Optical polarization properties of semipolar InGaN quantum wells.
Schade, L.; Schwarz, S. U.; Wernicke, T.; Ploch, S.; Rass, J.; Weyers, M.; Kneissl, M.
9th International Conference on Nitride Semiconductors (ICNS 9).
2011, 1 S.


Auger recombination in GaN-based laser diodes.
Scheibenzuber, W. G.; Schwarz, U. T.; Sulmoni, L.; Dorsaz, J.; Carlin, J. F.; Grandjean, N.
9th International Conference on Nitride Semiconductors (ICNS 9).
2011, 1 S.


InAlGaN/GaN MMICs in microstrip transmission line technology for wideband applications.
Schuh, P.; Sledzik, H.; Oppermann, M.; Quay, R.; Kühn, J.; Lim, T.; Waltereit, P.; Mikulla, M.; Ambacher, O.
The 6th European Microwave Integrated Circuits Conference (EuMIC) 2011: European Microwave Week.
2011, 69-72
(European Microwave Week 2011).


A 56-65 GHz high-power amplifier MMIC using 100 nm AlGaN/GaN dual-gate HEMTs.
Schwantuschke, D.; Haupt, C.; Kiefer, R.; Brueckner, P.; Seelmann-Eggebert, M.; Mikulla, M.; Kallfass, I.; Quay, R.
The 6th European Microwave Integrated Circuits Conference (EuMIC) 2011: European Microwave Week.
2011, 656-659
(European Microwave Week 2011).


Design and realisation of a 50 W GaN Class-E power amplifier.
Sochor, P.- L.; Maroldt, S.; Musser, M.; Walcher, H.; Kalim, D.; Quay, R.; Negra, R.
Proceedings of the Asia-Pacific Microwave Conference (APMC) 2011.
New York: IEEE Press, 2011, 518-521


Trade-offs between performance and reliability in AlGaN/GaN transistors.
Waltereit, P.; Bronner, W.; Kiefer, R.; Quay, R.; Dammann, M.; Cäsar, M.; Brueckner, P.; Müller, S.; Mikulla, M.; Ambacher, O.
physica status solidi c (2011), published online: 09.11.2011: DOI:10.1002/pssc.201100294, 365-368

2010

Reproducible and uniform growth of GaN based HEMTs on 4 inch SiC by plasma assisted molecular beam epitaxy suitable for production.
Aidam, R.; Waltereit, P.; Kirste, L.; Dammann, M.; Quay, R.
physica status solidi (a) 207 (2010), 6, S.1450-1524; published online 21.04.2010, DOI 10.1002/pssa.201026020


Investigation of Leakage Current of AlGaN/GaN HEMTs Under Pinch-Off Condition by Electroluminescence Microscopy.
Baeumler, M.; Gütle, F.; Polyakov, V. M.; Cäsar, M.; Dammann, M.; Konstanzer, H.; Pletschen, W.; Bronner, W.; Quay, R.; Waltereit, P.; Mikulla, M.; Ambacher, O.; Bourgeois, F.; Behtash, R.; Riepe, K.; van der Wel, P.J.; Klappe, J.; Rödle, T.
Journal of Electronics Materials 39 (2010), 6, 756-760; published online: 04.03.2010; DOI:10.1007/s11664-010-1120-9


Critical Factors influencing the Voltage Robustness of AlGaN/GaN HEMTs.
Cäsar, M.; Dammann, M.; Polyakov, V. M.; Waltereit, P.; Quay, R.; Mikulla, M.; Ambacher, O.
JEDEC: 25th Annual JEDEC ROCS Workshop: (formerly the GaAs REL Workshop).
2010, 91-94


Reliability status of GaN transistors and MMICs in Europe.
Dammann, M.; Cäsar, M.; Konstanzer, H.; Waltereit, P.; Quay, R.; Bronner, W.; Kiefer, R.; Müller, S.; Mikulla, M.; van der Wel, P.J.; Rödle, T.; Bourgeois, F.; Riepe, K.
Institute of Electrical and Electronics Engineers -IEEE-: IEEE International Reliability Physics Symposium 2010: IRPS 2010.
2010, 1-5


AlGaN/GaN mixer MMICs, and RF front-end receivers for C-, Ku-, and Ka-band space applications.
Do, M-N.; Seelmann-Eggebert, M.; Quay, R.; Langrez, D.; Cazaux, J.-L.
Proceedings of the 5th European Microwave Integrated Circuits Conference (EuMIC 2010).
London: Horizon House, 2010, 57-60
(European Microwave Week 2010).


Determination of the valence band offsets at HfO(2)/InN(0001) and InN/In(0.3)Ga(0.7)N(0001) heterojunctions using X-ray photoelectron spectroscopy.
Eisenhardt, A.; Knübel, A.; Schmidt, R.; Himmerlich, M.; Wagner, J.; Schaefer, J. A.; Krischok, S.
physica status solidi (a) 207 (2010), 6, 1335-1337


Kampf der Giganten: Siliziumkarbid versus Galliumnitrid.
Hüning, F.; Ambacher, O.; Guerra, A.
elektronikJOURNAL 45 (2010), 4a, 18-20


Structural properties of MBE AlInN and AlGaInN barrier layers for GaN-HEMT structures.
Kirste, L.; Lim, T.; Aidam, R.; Müller, S.; Waltereit, P.; Ambacher, O.
physica status solidi (a) 207 (2010), 6, 1338-41


Nonuniformity of electron density in In-rich InGaN films deduced from electrolyte capacitance-voltage profiling.
Knübel, A.; Polyakov, V. M.; Kirste, L.; Aidam, R.
Applied Physics Letters 96 (2010), 8, 082106-1-3


Influence of the surface potential on electrical properties of Al(x)Ga(1-x)N/GaN heterostructures with different Al-content: Effect of growth method: Einfluss des Oberflächenpotentials auf die elektrischen Eigenschaften von AlGaN/GaN Heterostrukturen mit verschiedenem Al-Gehalt: Auswirkung der Wachstumsmethode.
Köhler, K.; Müller, S.; Aidam, R.; Waltereit, P.; Pletschen, W.; Kirste, L.; Menner, H.; Bronner, W.; Leuther, A.; Quay, R.; Mikulla, M.; Ambacher, O.; Granzner, R.; Schwierz, F.; Buchheim, C.; Goldhahn, R.
Journal of Applied Physics 107 (2010), 5, 053711-1-5


Search for a suitable ohmic metallization scheme to GaN/AlGaN heterostructures for sub-micron devices.
Kolaklieva, L.; Kakanakov, R.; Chitanov, V.; Dulgerova, P.; Cimalla, V.
Solid State Phenomena 159 (2010), 81-86


Design and realization of GaN RF-devices and circuits from 1 to 30 GHz.
Kühn, J.; Musser, M.; Raay, F. van; Kiefer, R.; Seelmann-Eggebert, M.; Mikulla, M.; Quay, R.; Rödle, T.; Ambacher, O.
International Journal of Microwave and Wireless Technologie 2 (2010), 1, 115 - 120


Device and design optimization for AlGaN/GaN X-band-power-amplifiers with high efficiency.
Kühn, J.; Raay, F. van / IAF; Quay, R.; Kiefer, R.; Mikulla, M.; Seelmann-Eggebert, M.; Bronner, W.; Schlechtweg, M.; Ambacher, O.; Thumm, M.
Journal of Infrared, Millimeter and Terahertz Waves 31 (2010), 3, 367-379; published online: 14.10.2009; DOI:10.1007/s10762-009-9583-6


Harmonic termination of AlGaN/GaN/(Al)GaN single- and double-heterojunction HEMTs.
Kühn, J.; Waltereit, P.; Raay, F. van; Aidam, R.; Quay, R.; Ambacher, O.; Thumm, M.
GeMIC 2010: German Microwave Conference - CD.
Berlin: VDE-Verlag, 2010, 122-125


Compositional variation of nearly lattice-matched InAlGaN alloys for high electron mobility transistors.
Lim, T.; Aidam, R.; Kirste, L.; Waltereit, P.; Quay, R.; Müller, S.; Ambacher, O.
Applied Physics Letters 96 (2010), 25, 252108-1-3


Design of near lattice-matched AlGaInN-barriers for highly-scalable GaN-based transistor structures.
Lim, T.; Aidam, R.; Kirste, L.; Waltereit, P.; Müller, S.; Ambacher, O.
physica status solidi c 7 (2010), 7-8, 1958-1960


GaN-based submicrometer HEMTs with lattice -matched InAlGaN barrier grown by MBE.
Lim, T.; Aidam, R.; Waltereit, P.; Henkel, T.; Quay, R.; Lozar, R.; Maier, T.; Kirste, L.; Ambacher, O.
IEEE Electron Device - Letters 31 (2010), 7, 671-673


Analysis of polar GaN surfaces with photoelectron and high resolution electron energy loss spectroscopy.
Lorenz, P.; Haensel, T.; Gutt, R.; Koch, R. J.; Schaefer, J. A.; Krischok, S.
physica status solidi (b) 247 (2010), 7, 1658-1661


Angle-resolved photoelectron spectroscopy study of the GaN(0001)-2×2 surface.
Lorenz, P.; Gutt, R.; Himmerlich, M.; Schaefer, J. A.; Krischok, S.
physica status solidi c 7 (2010), 7-8, 1881-1883


Structural and compositional homogeneity of InAlN epitaxial layers nearly lattice-matched to GaN.
Mánuel, J.M.; Morales, F. M.; Lozano, J. G.; González, D.; García, R.; Lim, T.; Kirste, L.; Aidam, R.; Ambacher, O.
Acta Materialia 58 (2010), 4120-4125


Efficient AlGaN/GaN linear and digital-switch-mode power amplifiers for operation at 2 GHz.
Maroldt, S.; Wiegner, D.; Vitanov, S.; Palankovski, V.; Quay, R.; Ambacher, O.
IEICE Transactions on Electronics E93-C (2010), 8, 1238-1244


Integrated-Schottky-Diode GaN HFETs for high-efficiency digital PA MMICs at 2 GHz.
Maroldt, S.; Quay, R.; Haupt, C.; Kiefer, R.; Wiegner, D.; Ambacher, O.
40th European Microwave Conference (EuMC 2010): früher European Gallium Arsenide and other Compound Semiconductors Application Symposium.
London: Horizon House, 2010, 636-639
(European Microwave Week 2010).


GaN power FETs for next generation mobile communication systems.
Musser, M.; Walcher, H.; Maier. T.; Quay, R.; Dammann, M.; Mikulla, M.; Ambacher, O.
Proceedings of the 5th European Microwave Integrated Circuits Conference (EuMIC 2010).
London: Horizon House, 2010, 9-12
(European Microwave Week 2010).


Influence of Dry Etch Conditions on the Performance of Recessed Gate GaN/AlGaN HEMTs.
Pletschen, W.; Kiefer, R.; Maroldt, S.; Müller, S.; Quay, R.; Mikulla, M.; Ambacher, O.
Overberg, M. (ed.) et al.: State-of-the-Art Program on Compound Semiconductors 52 (SOTAPOCS 52): 218th ECS Meeting.
New Yersey: The Electrochemical Society, 2010, 61-66
(ECS Transactions).


Impact of Al content on transport properties of two-dimensional electron gas in GaN/Al(x)Ga(1-x)N/GaN heterostructures.
Polyakov, V. M.; Cimalla, V.; Lebedev, V.; Köhler, K.; Müller, S.; Waltereit, P.; Ambacher, O.
Applied Physics Letters 97 (2010), 14, 142112-1-3


Gallium Nitride RF-Devices: an overview on the development activities in Europe.
Quay, R.; Mikulla, M.
2010 IEEE MTT-S (IMS 2010): 2010 International Microwave Symposium.
Piscataway, NJ: IEEE, 2010, 1234-1237


Repeatable submicron AlGaN/GaN devices and MMICs.
Quay, R.; Waltereit, P.
Pavlidis, D. (ed.) et al.: WOCSDICE 2010: 34th Workshop on Compound Semiconductor Devices and Integrated Circuits.
2010, 35-36


GaN devices for communication applications: evolution of amplifier architectures.
Schmid, U.; Reber, R.; Chartier, S.; Widmer, K.; Oppermann, M.; Heinrich, W.; Meliani, C.; Quay, R.; Maroldt, S.
International Journal of Microwave and Wireless Technologie 2 (2010), 1, 85-93


GaN-based amplifiers for wideband applications.
Schuh, P.; Sledzik, H.; Reber, R.; Widmer, K.; Oppermann, M.; Musser, M.; Seelmann-Eggebert, M.; Kiefer, R.
International Journal of Microwave and Wireless Technologie 2 (2010), 1, 135- 141


GaN based power amplifiers for broadband applications from 2 GHz to 6 GHz.
Sledzik, H.; Reber, R.; Bunz, B.; Schuh, P.; Oppermann, M.; Musser, M.; Seelmann-Eggebert, M.; Quay, R.
40th European Microwave Conference (EuMC 2010): früher European Gallium Arsenide and other Compound Semiconductors Application Symposium.
London: Horizon House, 2010, 1658 - 1661
(European Microwave Week 2010).


High-temperature modeling of AlGaN/GaN HEMTs.
Vitanov, S.; Palankovski, V.; Maroldt, S.; Quay, R.
Solid State Electronics 54 (2010), 10, 1105-1112


AlGaN/GaN epitaxy and technology.
Waltereit, P.; Bronner, W.; Quay, R.; Dammann, M.; Kiefer, R.; Pletschen, W.; Müller, S.; Aidam, R.; Menner, H.; Kirste, L.; Köhler, K.; Mikulla, M.; Ambacher, O.
International Journal of Microwave and Wireless Technologie 2 (2010), 1, 3-11


Development of rugged 2 GHz power bars delivering more than 100 W and 60% power added efficiency.
Waltereit, P.; Bronner, W.; Quay, R.; Dammann, M.; Müller, S.; Köhler, K.; Mikulla, M.; Ambacher, O.; Harm, L.; Lorenzini, M.; Rödle, T.; Riepe, K.; Bellmann, K.; Buchheim, C.; Goldhahn, R.
physica status solidi c 7 (2010), 10, 2398-2403


High efficiency and low leakage AlGaN/GaN HEMTs for a robust, reproducible and reliable X-band MMIC space technology.
Waltereit, P.; Bronner, W.; Kiefer, R.; Quay, R.; Kühn, J.; Raay, F. van; Dammann, M.; Müller, S.; Libal, C.; Meier, T.; Mikulla, M.; Ambacher, O.
CS MANTECH - Compound Semiconductor Mantech: 2010 International Conference on Compound Semiconductor MANufacturing TECHnology.
Beaverton: CS MANTECH, 2010, 137-140


AlGaN/GaN-based power amplifiers for mobile radio applications: a review from the system supplier's perspective.
Wiegner, D.; Luz, G.; Jüschke, P.; Machinal, R.; Merk, T.; Seyfried, U.; Templ, W.; Pascht, A.; Quay, R.; Raay, F. van:
International Journal of Microwave and Wireless Technologie 2 (2010), 1, 95 - 104


X-ray photoelectron spectroscopy study of the chemical interaction at the Pd/SiC interface.
Zhang, Y.; Gajjala, G.; Hofmann, T.; Weinhardt, L.; Bär, M.; Heske, C.; Seelmann-Eggebert, M.; Meisen, P.
Journal of Applied Physics 108 (2010), 93, 093702-1-6


Books

2016

Micro-System: Gallium Nitride RF-Broad-Band High-Power Amplifier.
Mußer, M.
Stuttgart: Fraunhofer, 2016
(Science for Systems / Hrsg.: Ambacher, O.; 25). Zugl. Freiburg, Univ., Diss., 2014


Group III-Nitride Microwave Monolithically Integrated Circuits.
Quay, R.
In: Medjdoub, F.
Gallium Nitride (GaN): Physics, Devices, and Technology.
London: Taylor and Francis, 2016, 141-202


Modeling of Dispersive Millimeter-Wave GaN HEMT Devices for High Power Amplifier Design.
Schwantuschke, D.;
Stuttgart: Fraunhofer, 2016
(Science for Systems / Hrsg.: Ambacher, O.; 23). Zugl. Stuttgart, Univ., Diss., 2015