Publikationen des Geschäftsfelds Halbleiterlaser

Key Publications

GaSb-based 2.0 um SDL with 17W output power at 20°C.
Holl, P.; Rattunde, M.; Adler, S.; Bächle, A.; Diwo-Emmer, E.; Aidam, R.; Wagner, J.
In: Electronics Letters 52 (2016), 21, 1794-1795


Recent advances and applications of external Cavity-QCLs towards hyperspectral imaging for standoff detection and real-time spectroscopic sensing of chemicals.
Ostendorf, R.; Butschek, L.; Hugger, S.; Fuchs, F.; Yang, Q.; Jarvis, J.; Schilling, C.; Rattunde, M.; Merten, A.; Grahmann, J.; Boskovic, D.; Tybussek, T.; Rieblinger, K.; Wagner, J.
In: Photonics 3 (2016), 2, 15 S.


High voltage GaN-based schottky diodes in non-isolated LED buck converters.
Zibold, A.; Reiner, R.; Weiss, B.; Kunzer, M.; Quay, R.; Wagner, J.; Waltereit, P.; Ambacher, O.
In: 18th European Conference on Power Electronis and Applications (EPE 2016): ECCE Europe.
2016, 9 S.


Long wavelength emitting GaInN quantum wells on metamorphic GaInN buffer layers with enlarged in-plane lattice parameter.
Däubler, J.; Passow, T.; Aidam, R.; Köhler, K.; Kirste, L.; Kunzer, M.; Wagner, J.
In: Applied Physics Letters 105 (2014), 111111-1-5


Trace detection of explosive substances in hyperspectral imagery.
Jarvis, J. P.; Fuchs, F.; Hugger, S.; Blattmann, V.; Yang, Q.; Ostendorf, R.; Bronner, W.; Driad, R.; Aidam, R.; Wagner, J.; Beyerer, J.
In: Thoma, K. (Ed.) et al.: 9th Future Security: Security Research Conference.
Stuttgart: Fraunhofer, 2014, 241-247


2-µm high-brilliance micro-cavity VECSEL with > 2W output power.
Kaspar, S.; Rattunde, M.; Holl, P.; Adler, S.; Schilling, C.; Bächle, A.; Manz, C.; Aidam, R.; Köhler, K.; Wagner, J.
In: Moloney, J. (Ed.): Vertical External Cavity Surface Emitting Lasers (VECSELs) IV (SPIE 8966).
Bellingham, WA: SPIE, 2014, 89660T-1-14
(SPIE-Proceedings 8966).


Quantum cascade lasers (QCL) for active hyperspectral imaging.
Yang, Q. K.; Fuchs, F.; Wagner, J.
In: Advanced Optical Technologies 3 (2014), 2, 141-150


Quantum cascade lasers (QCL) for active hyperspectral imaging.
Yang, Q. K.; Fuchs, F.; Wagner, J.
Advanced Optical Technologies (2014), 19.03.2014, doi 10.1515/aot-2014-0006


Micro-cavity 2-µm GaSb-based semiconductor disk laser using high-reflectivity SiC heatspreader.
Kaspar, S.; Rattunde, M.; Schilling, C.; Adler, S.; Holl, P.; Manz, C.; Köhler, K.; Wagner, J.
Applied Physics Letters 103 (2013), 4, 041117-1-4


Broadband-tunable external-cavity quantum cascade lasers for spectroscopy and stand-off detection.
Fuchs, F.; Hugger, S.; Yang, Q. K.; Jarvis, J. P.; Kinzer, M.; Ostendorf, R.; Schilling, C.; Driad, R.; Bronner, W.; Bächle, A.; Aidam, R.; Wagner, J.
In: Razeghi, M. (ed) et al.: The Wonder of Nanotechnology: Quantum Optoelectronic Devices and Applications.
Bellingham: SPIE Press, 2013, 645-671


Laser direct writing of GaN-based light-emitting diodes - The suitable laser source for mesa definition.
Moser, R.; Goßler, C.; Kunzer, M.; Köhler, K.; Pletschen, W.; Brunne, J.; Schwarz, U. T.; Wagner, J.
In: Journal of Applied Physics 113 (2013), 103107-1-13


AlGaN-based 355 nm UV light-emitting diodes with high power efficiency.
Gutt, R.; Passow, T.; Kunzer, M.; Pletschen, W.; Kirste, L.; Forghani, K.; Scholz, F.; Köhler, K.; Wagner, J.
In: Applied Physics Express 5 (2012), 3, 032101-1-3


Semiconductor disk laser at 2.05 µm wavelength with 100 kHz linewidth at 1 W output power.
Kaspar, S.; Rattunde, M.; Töpper, T.; Manz, C.; Köhler, K.; Wagner, J.
In: Applied Physics Letters 100 (2012), 3, 031109-3


Wall-plug efficiency of mid-infrared quantum cascade lasers.
Yang, Q. K.; Schilling, C.; Ostendorf, R.; Hugger, S.; Fuchs, F.; Wagner, J.
In: Journal of Applied Physics 111 (2012), 5, 053111-1-9


Time-of-flight measurements of charge carrier diffusion in In(x)Ga(1-x)N/GaN quantum wells.
Danhof, J.; Schwarz, U. T.; Kaneta, A.; Kawakawi, Y.
In: Physical Review B 84 (2011), published online:29.07.2011;DOI: 10.1103/PhysRevB.84.035324, 035324-1-5


Efficient 350 nm LEDs on low edge threading dislocation density AlGaN buffer layers.
Gutt, R.; Passow, T.; Pletschen, W.; Kunzer, M.; Kirste, L.; Forghani, K.; Scholz, F.; Klein, O.; Kaiser, U.; Köhler, K.; Wagner, J.
In: Streubel, K. P. (Ed.) et al.: Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XV (SPIE 7954).
Bellingham, WA: SPIE, 2011, 79540Q-1-8
(SPIE-Proceedings 7954).


Vibrational mode and dielectric function spectra of BGaP probed by Raman scattering and spectroscopic ellipsometry.
Rogowsky, S.; Baeumler, M.; Wolfer, M.; Kirste, L.; Ostendorf, R.; Wagner, J.; Liebich, S.; Stolz, W.; Volz, K.; Kunert, B.
In: Journal of Applied Physics 109 (2011), 5, 053504-1-6


2.0 µm semiconductor disk laser with a heterodyne linewidth below 10 kHz.
Rösener, B.; Kaspar, S.; Rattunde, M.; Töpper, T.; Manz, C.; Köhler, K.; Ambacher, O.; Wagner, J.
In: Optics Letters 36 (2011), 18, 3587-3589


Fast self-heating in GaN-based laser diodes.
Scheibenzuber, W. G.; Schwarz, U. T.
In: Applied Physics Letters 98 (2011), 18, 181110-1-3


Epitaxy.
Walther, M.
In: Weber, H. (Ed.) et al.: Laser Physics and Applications, Subvolume B: Laser Systems, Part 3.
Berlin, Heidelberg, New York: Springer, 2011, 11-23
(Numerical data and functional relationships in science and technology: new series / Landolt-Börnstein).


Imaging stand-off detection of explosives by quantum cascade laser based backscattering spectroscopy.
Fuchs, F.; Hugger, S.; Kinzer, M.; Hinkov, B.; Aidam, R.; Bronner, W.; Lösch, R.; Yang, Q. K.; Degreif, K.; Schnürer, F.; Schweikert, W.
In: Strojnik, M. (Ed.) et al.: Infrared Remote Sensing and Instrumentation XVIII (SPIE 7808).
2010, 780810-1-9


Power scaling of quantum cascade lasers via multiemitter beam combining.
Hugger, S.; Aidam, R.; Bronner, W.; Fuchs, F.; Lösch, R.; Yang, Q. K.; Wagner, J.; Romasew, E.; Raab, M.; Tholl, H.D.; Höfer, B.; Matthes, A. L.
In: Optical Engineering 49 (2010), 11, 111111-1-5


Long-wavelength GaSb disk lasers.
Rösener, B.; Rattunde, M.; Hopkins, J.-M.; Burns, D.; Wagner, J.
In: Okhotnikov, O. (Ed.): Semiconductor Disk Lasers: Physics and Technology.
Berlin: Wiley-VCH, 2010, 143-186


Antiguiding factor of GaN-based laser diodes from UV to green.
Scheibenzuber, W. G.; Schwarz, U.; Lermer. T.; Lutgen, S.; Strauss, U.
In: Applied Physics Letters 97 (2010), 2, 021102-1-3


Rate equations analysis of external-cavity quantum cascade lasers.
Yang, Q. K.; Hinkov, B.; Fuchs, F.; Bronner, W.; Köhler, K.; Wagner, J.; Maulini, R.; Faist, J.
In: Journal of Applied Physics 107 (2010), 4, 043109-1 - 7

Papers

2016

Imaging standoff trace detection of explosives using IR-laser based backscattering.
Fuchs, F.; Hugger, S.; Jarvis, J.; Yang, Q. K.; Ostendorf, R.; Schilling, C.; Bronner, W.; Driad, R.; Aidam, R.; Wagner, J.
George, T. (ed) et al.: Micro- and Nanotechnology Sensors, Systems, and Applications VIII (SPIE 9836).
2016, 98362-1-9


Closure of incisions in cataract surgery in-vivo using a temperature controlled laser soldering system based on a 1.9µm semiconductor laser.
Gabay, I.; Basov, S.; Varssano, D.; Barequet, I.; Rosner, M.; Rattunde, M.; Wagner, J.; Platkov, M.; Harlev, M.; Rossmann, U.; Katzir, A.
Gannot, I. (Ed.): Optical Fibers and Sensors for Medical Diagnostics and Treatment Applications XVI (SPIE Proc.Vol.9702).
Bellingham, WA: SPIE, 2016, 97020B-1-7
(SPIE-Proceedings 9702).


Preparation of deep UV transparent AlN substrates with high structural perfection for optoelectronic devices.
Hartmann, C.; Wollweber, J.; Sintonen, S.; Dittmar, A.; Kirste, L.; Kollowa, S.; Irmscher, K.; Bickermann, M.
CrystEngComm 18 (2016), 3488-3497


GaSb-based 2.0 um SDL with 17W output power at 20°C.
Holl, P.; Rattunde, M.; Adler, S.; Bächle, A.; Diwo-Emmer, E.; Aidam, R.; Wagner, J.
Electronics Letters 52 (2016), 21, 1794-1795


Optimization of 2.5 um VECSEL: influence of the QW active region.
Holl, P.; Rattunde, M.; Adler, S.; Bächle, A.; Diwo-Emmer, E.; Aidam, R.; Manz, C.; Köhler, K.; Wagner, J.
Wilcox, K. G. (Ed.): Vertical External Cavity Surface Emitting Lasers (VECSELs) VI (SPIE 9734).
Bellingham, WA: SPIE, 2016, 97340S-1-7
(SPIE-Proceedings 9734).


Quantum cascade laser based active hyperspectral imaging for standoff detection of chemicals on surfaces.
Hugger, S.; Fuchs, F.; Jarvis, J. P.; Yang, Q. K.; Rattunde, M.; Ostendorf, R.; Schilling, C.; Draid, R.; Bronner, W.; Aidam, R.; Wagner, J.; Tybussek, T.; Rieblinger, K.
Razeghi, M. (Ed.) et al.: Quantum Sensing and Nano Electronics and Photonics XIII (SPIE 9755).
Bellingham, WA: SPIE, 2016, 97550A-1-11
(SPIE-Proceedings 9755).


Hyperspectral image analysis for stand-off trace detection using IR laser spectroscopy.
Jarvis, J. P.; Fuchs, F.; Hugger, S.; Ostendorf, R.; Butschek, L.; Yang, Q.; Dreyhaupt, A.; Grahmann, J.; Wagner, J.
Fountain, A. W. (Ed.): Chemical, Biological, Radiological, Nuclear, and Explosives (CBRNE) Sensing XVII (SPIE 9824).
Bellingham, WA: SPIE, 2016, 982401-10
(SPIE-Proceedings 9824).


Doping behavior of (1122) GaN grown on patterned sapphire substrates.
Meisch, T.; Zeller, R.; Schörner, S.; Thonke, K.; Kirste, L.; Fuchs, T.; Scholz, F.
physica status solidi (b) 253 (2016), 1, 164-168


Quasi-Bessel beams from asymmetric and astigmatic illumination sources.
Müller, A.; Wapler, M. C.; Schwarz, U. T.; Reisacher, M.; Holc, K.; Ambacher, O.; Wallrabe, U.
Optics Express 24 (2016), 15, 17433-17452


Real-time spectroscopic sensing using a widely tunable External Cavity-QCL with MOEMS diffraction grating (SPIE 9755).
Ostendorf, R.; Butschek, L.; Merten, A.; Grahmann, J.; Jarvis, J. P.; Hugger, S.; Fuchs, F.; Wagner, J.
Razeghi, M. (Ed.) et al.: Quantum Sensing and Nano Electronics and Photonics XIII (SPIE 9755).
Bellingham, WA: SPIE, 2016, 975507-1-8
(SPIE-Proceedings 9755).

Recent advances and applications of external Cavity-QCLs towards hyperspectral imaging for standoff detection and real-time spectroscopic sensing of chemicals.
Ostendorf, R.; Butschek, L.; Hugger, S.; Fuchs, F.; Yang, Q.; Jarvis, J.; Schilling, C.; Rattunde, M.; Merten, A.; Grahmann, J.; Boskovic, D.; Tybussek, T.; Rieblinger, K.; Wagner, J.
Photonics 3 (2016), 2, 15 S.


SDL In-band Pumped Q-switched 2.1 um Ho:YAG Laser.
Scholle, K.; Lamrini, S.; Adler, S.; Holl, P.; Diwo, E.; Rattunde, M.; Fuhrberg, P:
Conference on Lasers and Electro-Optics (CLEO 2016): Science and Innovations.
Washington: Optical Society of America, 2016, 2 S.
(Technical Digest Series).


High voltage GaN-based schottky diodes in non-isolated LED buck converters.
Zibold, A.; Reiner, R.; Weiss, B.; Kunzer, M.; Quay, R.; Wagner, J.; Waltereit, P.; Ambacher, O.
18th European Conference on Power Electronis and Applications (EPE 2016): ECCE Europe.
2016, 9 S.


LED-Retrofit Based on AlGaN/GaN-on-Si Field-Effect Transistor Drivers.
Zibold, A.; Kunzer, M.; Reiner, R.; Weiss, B.; Waltereit, P.; Quay, R.; Wagner, J.; Ambacher, O.
Luger Research e.U. - Insitute for innovation & Technology: LED Lighting Technologies - Smart Technologies for Lighting Innovations.
Dornbrin: Luger Research e.U., 2016, 5 S.

2015

Standoff trace detection of explosives with active infrared hyperspectral imagery.
Fuchs, F.; Hugger, S.; Jarvis, J. P.; Yang, Q. K.; Ostendorf, R.; Wagner, J.; Schilling, C.; Bronner, W.; Driad, R.; Aidam, R.
Beyerer, J. (Ed.) et al.; Fraunhofer VVS: 10th Future Security: Security research Conference.
Stuttgart: Fraunhofer, 2015, 293-301.


Standoff trace detection of explosives with Infrared hyperspectral imagery.
Fuchs, F.; Hugger, S.; Jarvis, J. P.; Yang, Q. K.; Zaum, F.; Ostendorf, R.; Schilling, C.; Bronner, W.; Driad, R.; Aidam, R.; Wagner, J.
George, T. (Ed.) et al.: Micro- and Nanotechnology Sensors, Systems, and Applications VII (SPIE-Proc. Vol. 9467): 20-24 April, 2015.
Bellingham, WA: SPIE, 2015, 94672O-1-10
(SPIE-Proceedings 9467).


Large MOEMS diffraction grating results providing an EC-QCL wavelength scan of 20%.
Grahmann, J.; Merten, A.; Herrmann, A.; Ostendorf, R.; Bleh, D.; Drabe, C.; Kamenz, J.
Piyawattanametha, W. (Ed.) et al.: MOEMS and Miniaturized Systems XIV (SPIE 9375).
Bellingham, WA: SPIE, 2015, 93750W-1-9
(SPIE-Proceedings 9375).


Less heat - more power: Novel pumping concept for semiconductor disk lasers boosts efficiency.
Rattunde, M.; Berndt, M.
Laser Technik Journal (2015), 1, 34-37


Index-antiguiding in narrow-ridge GaN-based laser diodes investigated by measurements of the current-dependent gain and index spectra and by self-consistent simulation.
Redaelli, L.; Wenzel, H.; Piprek, J.; Weig, T.; Einfeldt, S.; Martens, M.; Lükens, G; Schwarz, U. T.; Kneissl, M.
IEEE Journal of Quantum Electronics 51 (2015), 8, 6


Birefringence and refractive indices of wurtzite GaN in the transparency range.
Shokhovets, S.; Himmerlich, M.; Kirste, L.; Leach, J.H.; Krischok, S.
Applied Physics Letters 107 (2015), 9, 092104-1-5


Widely tuneable quantum cascade lasers for spectroscopic sensing.
Wagner, J.; Ostendorf, R.; Grahmann, J.; Merten, A.; Hugger, S.; Jarvis, J. P.; Fuchs, F.; Boskovic, D.; Schenk, H.
Razeghi, M. (Ed.) et al.: Quantum Sensing and Nanophotonic Devices XII (SPIE 9370).
Bellingham, WA: SPIE, 2015, 937012-1-6
(SPIE-Proceedings 9730).


Large area InN terahertz emitters based on the lateral photo-Dember effect.
Wallauer, J.; Grumber, C.; Polyakov, V.; Iannucci, R.; Cimalla, V.; Ambacher, O.; Walther, M.
Applied Physics Letters 107 (2015), 11, 111102-1-4


Implementation and investigation of mode locking in GaN-based laser diodes in external cavity configuration.
Weig, T.; Höck, H.; Holc, K.; Köhler, K.; Wagner, J.; Schwarz, U. T.
physica status solidi (a) 212 (2015), 5, 986-991

2014

Focus on quantum efficiency.
Buchleitner, A.; Burghardt, I.; Cheng, Y. C.; Scholes, G.; Schwarz, U. T.; Weber-Bargioni, A.; Wellens, T.
New Journal of Physics 16 (2014), 105021, 4 S.


Long wavelength emitting GaInN quantum wells on metamorphic GaInN buffer layers with enlarged in-plane lattice parameter.
Däubler, J.; Passow, T.; Aidam, R.; Köhler, K.; Kirste, L.; Kunzer, M.; Wagner, J.
Applied Physics Letters 105 (2014), 111111, 111111-1-5


Thermally-activated degradation of InGaN-based laser diodes: Effect on threshold current and forward voltage.
De Santi, C.; Meneghini, M.; Marioli, M.; Buffolo, M.; Trivellin, N.; Weig, T.; Holc, K.; Köhler, K.; Wagner, J.; Schwarz, U. T.; Meneghesso, G.; Zanoni, E.
Microelectronics Reliability 54 (2014), 2147-2150


GaN-based micro-LED arrays on flexible substrates for optical cochlear implants.
Goßler, C.; Bierbrauer, C.; Moser, R.; Kunzer, M.; Holc, K.; Pletschen, W.; Köhler, K.; Wagner, J.; Schwaerzle, M.; Ruther, P.; Paul, O.; Neef, J.; Keppeler, D.; Hoch, G.; Moser, T.; Schwarz, U. T.
Journal of Physics D 47 (2014), 205401, 29.04.2014, doi:10.1088/0022-3727/47/20/205401, S.1-6


Tunable external cavity quantum cascade lasers (EC-QCL) an application field for MOEMS based scanning gratings.
Grahmann, J.; Merten, A.; Ostendorf, R.; Fontenot, M.; Bleh, D.; Schenk, H.; Wagner, J.
Piyawattanametha, W. (Ed.) et al.: MOEMS and Miniaturized Systems XIII (SPIE-Proc. Vol. 8977).
Bellingham, WA: SPIE, 2014, 897708-1-11
(SPIE-Proceedings 8977).


The photonic solar cell - system design and efficiency estimations.
Höhn, O.; Kraus, T.; Schwarz, U. T.; Bläsi, B.
Wehrspohn, R. (ed) et al.: Photonics for Solar Energy Systems V (SPIE 9140).
Bellingham, WA: SPIE, 2014, 91400B-1-7
(SPIE-Proceedings 9140).


Gallium nitride laser diodes with integrated absorber: on the dynamics of self-pulsation.
Holc, K.; Lükens, G; Weig, T.; Köhler, K.; Wagner, J.; Schwarz, U. T.
physica status solidi c 11 (2014), 3-4, 670-673


Influence of surface roughness on the optical mode profile of GaN-based violet ridge waveguide laser diodes.
Holc, K.; Jakob, A.; Weig, T.; Köhler, K.; Ambacher, O.; Schwarz, U. T.
Belyanin, A. (Ed.) et al.: Novel In-Plane Semiconductor Lasers XIII (SPIE 9002).
Bellingham, WA: SPIE, 2014, 90020I-1-9
(SPIE-Proceedings 9002).


Trace detection of explosive substances in hyperspectral imagery.
Jarvis, J. P.; Fuchs, F.; Hugger, S.; Blattmann, V.; Yang, Q.; Ostendorf, R.; Bronner, W.; Driad, R.; Aidam, R.; Wagner, J.; Beyerer, J.
Thoma, K. (Ed.) et al.: 9th Future Security: Security Research Conference.
Stuttgart: Fraunhofer, 2014, 241-247


2-µm high-brilliance micro-cavity VECSEL with > 2W output power.
Kaspar, S.; Rattunde, M.; Holl, P.; Adler, S.; Schilling, C.; Bächle, A.; Manz, C.; Aidam, R.; Köhler, K.; Wagner, J.
Moloney, J. (Ed.): Vertical External Cavity Surface Emitting Lasers (VECSELs) IV (SPIE 8966).
Bellingham, WA: SPIE, 2014, 89660T-1-14
(SPIE-Proceedings 8966).


Comparative analysis of quantum cascade laser modeling based on density matrices and non-equilibrium Green's functions.
Lindskog, M.; Wolf, J. M.; Trinite, V.; Liverini, V.; Faist, J.; Maisons, G.; Carras, M.; Aidam, R.; Ostendorf, R.; Wacker, A.
Applied Physics Letters 105 (2014), 103106-1-4


Microscopic-scale investigation of the degradation of InGaN-based laser diodes submitted to electrical stress.
Meneghini, M.; Carraro, S.; Meneghesso, G.; Trivellin, N.; Mura, G.; Rossi, F.; Salviati, G.; Holc, K.; Weig, T.; Schade, L.; Karunakaran, M. A.; Wagner, J.; Schwarz, U. T.; Zanoni, E.
Chyi, J.-I. (Ed.) et al.: Gallium Nitride Materials and Devices IX (SPIE 8986).
Bellingham, WA: SPIE, 2014, 89861P-1-7
(SPIE-Proceedings 8986).


Luminance and current distribution of hybrid circular GaN-based resonant-cavity light-emitting diodes with lateral current injection on the n- and p-side.
Passow, T.; Kunzer, M.; Börner, P.; Pletschen, W.; Köhler, K.; Wagner, J.
physica status solidi c 11 (2014), 3-4, 817-820


Less heat - more power: Novel pumping concept for semiconductor disk lasers boosts efficiency.
Rattunde, M.; Berndt, M.
Optik & Photonik 9 (2014), 4, 31-34


Growth and doping of semipolar GaN grown on patterned sapphire substrates.
Scholz, F.; Meisch, T.; Caliebe, M.; Schörner, S.; Thonke, K.; Kirste, L.; Bauer, S.; Lazarev, S.; Baumbach, T.
Journal of Crystal Growth 405 (2014), 97-101


Excitons and exciton-phonon coupling in the optical response of GaN.
Shokhovets, S.; Bärwolf, F.; Gobsch, G.; Runge, K.; Köhler, K.; Ambacher, O.
physica status solidi c 11 (2014), 2, 297-301


Influence of sample thickness and concentration of Ce dopant on the optical properties of YAG:Ce ceramic phosphors for white LEDs.
Waetzig, K.; Kunzer, M.; Kinski, I.
Journal of Materials Research 29 (2014), 19, 2318-2324


Absorption at large reverse bias in monolithic GaN-based short-pulse-multi-section laser diodes.
Weig, T.; Lükens, G; Holc, K.; Köhler, K.; Wagner, J.; Schwarz, U. T.
Belyanin, A. (Ed.) et al.: Novel In-Plane Semiconductor Lasers XIII (SPIE 9002).
Bellingham, WA: SPIE, 2014, 90020K-1-10
(SPIE-Proceedings 9002).


Implementation and investigation of mode locking in GaN-based laser diodes in external cavity configuration.
Weig, T.; Höck, H.; Holc, K.; Köhler, K.; Wagner, J.; Schwarz, U. T.
physica status solidi (a) (2014), DOI 10.1002/pssa.201431682, published online: 29 December 2014, S. 1-6


Longitudinal mode competition and mode clustering in (Al,In)GaN laser diodes.
Weig, T.; Hager, T.; Bruederl, G.; Strauss, U.; Schwarz, U. T.
Optics Express 22 (2014), 22, 1-15


Quantum cascade lasers (QCL) for active hyperspectral imaging.
Yang, Q. K.; Fuchs, F.; Wagner, J.
Advanced Optical Technologies (2014), 19.03.2014, doi 10.1515/aot-2014-0006

2013

Dynamics of thermalization in GaInN/GaN quantum wells grown on ammonothermal GaN.
Binder, J.; Korona, K. P.; Wysmolek, A.; Kamiska, M.; Köhler, K.; Kirste, L.; Ambacher, O.; Zajac, M.; Dwilinski, R.
Journal of Applied Physics 114 (2013), 22, 223504-1-12


Identification of nnp and npp Auger recombination as significant contributor to the efficiency droop in (GaIn)N quantum wells by visualization of hot carriers in photoluminescence.
Binder, M.; Nirschl, A.; Zeisel, R.; Hager, T.; Lugauer, H.; Sabathil, M.; Bougeard, D.; Wagner, J.; Galler, B.
Applied Physics Letters 103 (2013), 7, 071108-1-5


Investigations on correlation between I-V characteristic and internal quantum efficiency of blue (AlGaIn)N light-emitting diodes.
Binder, M.; Galler, B.; Furitsch, M.; Off, J.; Wagner, J.; Zeisel, R.; Katz, S.
Applied Physics Letters 103 (2013), 22, 221110-1-4


Infrared hyperspectral standoff detection of explosives.
Fuchs, F.; Hugger, S.; Jarvis, J. P.; Blattmann, V.; Kinzer, M.; Yang, Q. K.; Ostendorf, R.; Bronner, W.; Driad, R.; Aidam, R.; Wagner, J.
Fountain, A. W. (Ed.): Chemical, Biological, Radiological, Nuclear, and Explosives (CBRNE) Sensing XIV (SPIE 8710).
Bellingham, WA: SPIE, 2013, 87100I-1-8
(SPIE-Proceedings 8710).


Experimental determination of the dominant type of Auger recombination in InGaN quantum wells.
Galler, B.; Lugauer, H.; Binder, M.; Hollweck, R.; Folwill, Y.; Nirschl, A.; Gomez-Iglesias, A.; Hahn, B.; Wagner, J.; Sabathil, M.
Applied Physics Express 6 (2013), 11, 112101-1-4


Aluminum-germanium wafer bonding of (AlGaIn)N thin-film light-emitting diodes.
Goßler, C.; Kunzer, M.; Baum, M.; Wiemer, M.; Moser, R.; Passow, T.; Köhler, K.; Schwarz, U. T.; Wagner, J.
Microsystem Technologies 19 (2013), 655-659


Selective excitation of zone-folded phonon modes within one triplet in a semiconductor superlattice.
Heinecke, D. C.; Kliebisch, O.; Flock, J.; Bruchhausen, A.; Köhler, K.; Dekorsy, T.
Physical Review B 87 (2013), 075307-1-4


Photonic band gap engineering of solar cells.
Höhn, O.; Kraus, T.; Zilk, M.; Schwarz, U. T.; Bläsi, B.
28th European PV Solar Energy Conference and Exhibition (EU PVSEC).
2013, 4 S.


Impact of band structure and absorber dynamics on self-Q-switching in GaN-based multisection laser diodes at high reverse bias.
Holc, K.; Weig, T.; Köhler, K.; Wagner, J.; Schwarz, U. T.
Applied Physics Express 6 (2013), 8, 084101-1-4


Picosecond pulse generation in monolithic GaN-based multi-section laser diodes.
Holc, K.; Weig, T.; Pletschen, W.; Köhler, K.; Wagner, J.; Schwarz, U. T.
Chyi, J.-I. (ed) et al.: Gallium Nitride Materials and Devices VIII (SPIE 8625).
Bellingham, WA: SPIE, 2013, 862515-1-8
(SPIE-Proceedings 8625).


Broadband-tunable external-cavity quantum cascade lasers for the spectroscopic of hazardous substances.
Hugger, S.; Fuchs, F.; Jarvis, J. P.; Kinzer, M.; Yang, Q. K.; Driad, R.; Aidam, R.; Wagner, J.
Razeghi, M. (ed) et al.: Quantum Sensing and Nanophotonic Devices X (SPIE 8631).
Bellingham, WA: SPIE, 2013, 86312I-1-13
(SPIE-Proceedings 8631).


Hyperspectral image analysis for standoff detection of explosives.
Jarvis, J. P.; Fuchs, F.; Hugger, S.; Blattmann, V.; Yang, Q. K.; Ostendorf, R.; Bronner, W.; Driad, R.; Aidam, R.; Wagner, J.; Beyerer, J.
Lauster, M. (Ed.): 8th Future Security: Security Research Conference.
Stuttgart: Fraunhofer, 2013, 205-214


Plasmonic particle array on large areas for photon management.
Jüchter, S.; Meisenheimer, S.-K.; Hauser, H.; Wellens, Ch.; Höhn, O.; Kübler, V.; Fix, T.; Schwarz, U. T.; Bläsi, B.
28th European PV Solar Energy Conference and Exhibition (EU PVSEC).
2013, 1-6


30 W peak-power 3 ns pulse-width operation of a 2 µm electro-optically cavity-dumped VECSEL.
Kaspar, S.; Rattunde, M.; Töpper, T.; Adler, S.; Schwarz, U. T.; Manz, C.; Köhler, K.; Wagner, J.
Hastie, J. E. (Ed.): Vertical External Cavity Surface Emitting Lasers (VECSELs) III (SPIE 8606).
Bellingham, WA: SPIE, 2013, 86060B-1-8
(SPIE-Proceedings 8606).


Linewidth narrowing and power scaling of single-frequency 2.X µm GaSb-based semiconductor disk lasers.
Kaspar, S.; Rattunde, M.; Töpper, T.; Rösener, B.; Manz, C.; Köhler, K.; Wagner, J.
IEEE Journal of Quantum Electronics 49 (2013), 3, 314-324


Micro-cavity 2-µm GaSb-based semiconductor disk laser using high-reflectivity SiC heatspreader.
Kaspar, S.; Rattunde, M.; Schilling, C.; Adler, S.; Holl, P.; Manz, C.; Köhler, K.; Wagner, J.
Applied Physics Letters 103 (2013), 4, 041117-1-4


Recent advances in 2-µm GaSb-based semiconductor disk laser - power scaling, narrow-linewidth and short-pulse operation.
Kaspar, S.; Rattunde, M.; Töpper, T.; Moser, R.; Adler, S.; Manz, C.; Köhler, K.; Wagner, J.
IEEE Journal of Selected Topics in Quantum Electronics 19 (2013), 4, 1501908


Nanostructure and strain in InGaN/GaN superlattices grown in GaN nanowires.
Kehagias, T.; Dimitrakopulos, G. P.; Becker, P.; Kioseoglou, J.; Furtmayr, F.; Koukoula, T.; Häusler, I.; Chernikov, A.; Chatterjee, S.; Karakostas, T.; Solowan, H.-M.; Schwarz, U. T.; Eickhoff, M.; Komninou, P.
Nanotechnology 24 (2013), 43, 1-14


Correlation between noise properties and coherent coupling of lateral modes in quantum cascade lasers.
Kinzer, M.; Yang, Q. K.; Hugger, S.; Schilling, C.; Ostendorf, R.; Aidam, R.; Driad, R.; Bronner, W.; Fuchs, F.; Wagner, J.
IEEE Journal of Selected Topics in Quantum Electronics 19 (2013), 4, 1200108


Miniaturisierte optische Integrationsplattform für III-N basierte opto-chemische Detektoren: Miniaturized optical integration platform for III-N based optochemical detectors.
Kleindienst, R.; Cimalla, V.; Eickhoff, M.; Grewe, A.; Holc, K.; Schätzle, J.; Schörmann, J.; Schwarz, U. T.; Teubert, J.; Sinzinger, S.
MikroSystemTechnik Kongress 2013: Von Bauelementen zu Systemen.
Berlin: VDE-Verlag, 2013, 464-467


Diffusion of Mg dopant in metal-organic vapor-phase epitaxy grown GaN and AlxGa1-xN.
Köhler, K.; Gutt, R.; Wiegert, J.; Kirste, L.
Journal of Applied Physics 113 (2013), 073514-1-13


Analysis of perturbations in the lateral far-field of blue InGaN laser diodes.
Kopp, F.; Lell, A.; Eichler, C.; Schwarz, U. T.; Strauss, U.
Applied Physics Letters 102 (2013), 4, 043504-1-4


Blue superluminescent light-emitting diodes with output power above 100 mW for picoprojection.
Kopp, F.; Eichler, C.; Lell, A.; Tautz, S.; Ristic, J.; Stojetz, B.; Höß, C.; Weig, T.; Schwarz, U. T.; Strauss, U.
Japanese Journal of Applied Physics 52 (2013), 8, 08JH07-1-5


Degradation of InGaN/GaN laser diodes investigated by microcathodoluminescence and micro-photoluminescence.
Meneghini, M.; Carraro, S.; Meneghesso, G.; Trivellin, N.; Mura, G.; Rossi, F.; Salviati, G.; Holc, K.; Weig, T.; Schade, L.; Karunakaran, M. A.; Wagner, J.; Schwarz, U. T.; Zanoni, E.
Applied Physics Letters 103 (2013), 23, 233506-1-4


Laser direct writing of GaN-based light-emitting diodes - The suitable laser source for mesa definition.
Moser, R.; Goßler, C.; Kunzer, M.; Köhler, K.; Pletschen, W.; Brunne, J.; Schwarz, U. T.; Wagner, J.
Journal of Applied Physics 113 (2013), 103107-1-13


Design, fabrication, and characterization of near-milliwatt-power RCLEDs emitting at 390 nm.
Moudakir, T.; Genty, F.; Kunzer, M.; Börner, P.; Passow, T.; Suresh, S.; Patriarche, G.; Köhler, K.; Pletschen, W.; Wagner, J.; Ougazzaden, A.
IEEE Photonics Journal 5 (2013), 6, 1-9


High power efficiency AlGaN-based ultraviolet light-emitting diodes.
Passow, T.; Gutt, R.; Kunzer, M.; Pletschen, W.; Kirste, L.; Forghani, K.; Scholz, F.; Köhler, K.; Wagner, J.
Japanese Journal of Applied Physics 52 (2013), 08JG16-1-4


Energy offset between valence band anti-crossing and optical polarization switching in semipolar InGaN quantum wells.
Schade, L.; Schwarz, U. T.
Applied Physics Letters 102 (2013), 232101-1-4


Optically pumped GaInN/GaN multiple quantum wells for the realization of efficient green light-emitting devices.
Schiavon, D.; Binder, M.; Loeffler, A.; Peter, M.
Applied Physics Letters 102 (2013), 113509-1-4


Wavelength-dependent determination of the recombination rate coefficients in single-quantum-well GaInN/GaN light emitting diodes.
Schiavon, D.; Binder, M.; Peter, M.; Galler, B.; Drechsel, P.; Scholz, F.
physica status solidi (b) 250 (2013), 2, 283-290


Direct observation of charge carrier diffusion and localization in an InGaN multi quantum well.
Solowan, H.-M.; Danhof, J.; Schwarz, U. T.
Japanese Journal of Applied Physics 52 (2013), 8, 08JK07-1-5


GaN doped with beryllium - an effective light converter for white light emitting diodes.
Teisseyre, H.; Bockowski, M.; Grzegory, I.; Kozanecki, A.; Damilano, B.; Zhydachevskii, Y.; Kunzer, M.; Holc, K.; Schwarz, U. T.
Applied Physics Letters 103 (2013), 011107-1-5


Mode locking in monolithic two-section InGaN blue-violet semiconductor lasers.
Vasil'ev, P. P.; Sergeev, A. B.; Smetanin, I. V.; Weig, T.; Schwarz, U. T.; Sulmoni, L.; Dorsaz, J.; Lamy. J.-M.; Carlin, J.-F.; Grandjean, N.; Zeng, X.; Stadelmann, T.; Großmann, S.; Hoogerwerf, A. C.; Boiko, D. L.
Applied Physics Letters 102 (2013), 121115-1-4


Passive mode-locking in the cavity of monolithic GaN-based multi-section laser diodes.
Weig, T.; Schwarz, U. T.; Sulmoni, L.; Lamy. J.-M.; Carlin, J.-F.; Grandjean, N.; Boiko, D. L.
Belyanin, A. A. (Ed.) et al.: Novel In-Plane Semiconductor Lasers XII (SPIE 8640).
Bellingham, WA: SPIE, 2013, 86400H-1-9
(SPIE-Proceedings 8640).

2012

Lateral charge carrier diffusion in InGaN quantum wells.
Danhof, J.; Solowan, H.-M.; Schwarz, U. T.; Kaneta, A.; Kawakami, Y.; Schiavon, D.; Meyer, T.; Peter, M.
physica status solidi (b) 249 (2012), 3, 480 - 484


Local internal quantum efficiency of a green light emitting InGaN/GaN quantum well.
Danhof, J.; Schwarz, S. U.; Meyer, T.; Vierheilig, C.; Peter, M.
physica status solidi (b) 249 (2012), 3, 600 - 603


Line beam processing for laser lift-off of GaN from sapphire.
Delmdahl, R.; Pätzel, R.; Brune, J.; Senczuk, R.; Goßler, C.; Moser, R.; Kunzer, M.; Schwarz, U. T.
physica status solidi (a) 209 (2012), 12, 2653-2658


Valence band offsets at oxide/InN interfaces determined by X-ray photoelectron spectroscopy.
Eisenhardt, A.; Eichapfel, G.; Himmerlich, M.; Knübel, A.; Passow, T.; Wang, Ch. Y.; Benkhelifa, F.; Aidam, R.; Krischok, S.
physica status solidi c 9 (2012), 3-4, 685-688


Strain and defects in Si-doped (Al)GaN epitaxial layers.
Forghani, K.; Schade, L.; Schwarz, U. T.; Lipski, F.; Klein, O.; Kaiser, U.; Scholz, F.
Journal of Applied Physics 112 (2012), 093102-1-9


Imaging standoff detection of explosives by diffuse reflectance IR laser spectroscopy.
Fuchs, F.; Jarvis, J. P.; Hugger, S.; Kinzer, M.; Yang, Q. K.; Bronner, W.; Driad, R.; Aidam, R.
Aschenbruck, N. (Ed.) et al.: Future Security 2012, 7th Security Research Conference.
Berlin, Heidelberg, New York: Springer, 2012, 388-399
(Communications in Computer and Information Science 318).


Standoff detection of explosives with broad band tunable external cavity quantum cascade lasers.
Fuchs, F.; Hugger, S.; Kinzer, M.; Yang, Q. K.; Bronner, W.; Aidam, R.; Degreif, K.; Rademacher, S.; Schnürer, F.; Schweikert, W.
Razeghi, M. (ed) et al.: Quantum Sensing and Nanophotonic Devices IX (SPIE 8268).
Bellingham, WA: SPIE, 2012, 82681N-1-9
(SPIE-Proceedings 8268).


Standoff detection of explosives with external cavity quantum cascade lasers.
Fuchs, F.
SPIE - The International Society for Optical Engineering: SPIE Newsroom: the news and technical research website of SPIE.
Bellingham, WA: SPIE, 1-3


Influence of indium content and temperature on Auger-like recombination in InGaN quantum wells grown on (111) silicon substrates.
Galler, B.; Drechsel, P.; Monnard, R.; Rode, P.; Stauss, P.; Froehlich, S.; Bergbauer, W.; Binder, M.; Sabathil, M.; Hahn, B.; Wagner, J.
Applied Physics Letters 101 (2012), 131111-1 - 4


Aluminum-germanium wafer bonding of (AlGaIn)N thin-film light-emitting diodes.
Goßler, C.; Kunzer, M.; Baum, M.; Wiemer, M.; Moser, R.; Passow, T.; Köhler, K.; Schwarz, U. T.; Wagner, J.
Microsystem Technologies (2012), published online: 11.12.2012; DOI: 10.1007/s00542-012-1709-4, 5 S.


AlGaN-based 355 nm UV light-emitting diodes with high power efficiency.
Gutt, R.; Passow, T.; Kunzer, M.; Pletschen, W.; Kirste, L.; Forghani, K.; Scholz, F.; Köhler, K.; Wagner, J.
Applied Physics Express 5 (2012), 3, 032101-1-3


Near-field characteristics of broad area diode lasers during catastrophic optical damage failure.
Hempel, M.; Tomm, J.W.; Baeumler, M.; Konstanzer, H.; Mukherjee, J.; Elsässer, T.
Panajotov, K. (ed) et al.: Semiconductor Lasers and Laser Dynamics V (SPIE 8432).
Bellingham, WA: SPIE, 2012, 84320O-1-7
(SPIE-Proceedings 8433).


Near-field evolution in strongly pumped broad area diode lasers.
Hempel, M.; Tomm, J.W.; Baeumler, M.; Konstanzer, H.; Mukherjee, J.; Elsässer, T.
Belyanin, A. A. (Ed.) et al.: Novel In-Plane Semiconductor Lasers XI (SPIE 8277).
Bellingham, WA: SPIE, 2012, 82771H-1-8
(SPIE-Proceedings 8277).


Combination of angular selective photonic structure and concentrating solar cell system.
Höhn, O.; Peters, M.; Zilk, M.; Ulbrich, C.; Hoffmann, A.; Schwarz, U. T.; Bläsi, B.
27th European PV Solar Energy Conference and Exhibition (EU PVSEC): 24-28 September 2012.
2012, 5 S.


Optimization of angularly selective photonic filters for concentrator photovoltaic.
Höhn, O.; Peters, M.; Ulbrich, C.; Hoffmann, A.; Schwarz, U. T.; Bläsi, B.
Wehrspohn, R. (ed) et al.: Photonics for Solar Energy Systems IV (SPIE 8438).
Bellingham, WA: SPIE, 2012, 84380A-1-10
(SPIE-Proceedings 8433).


(Al, In)GaN laser diodes with optimized ridge structures.
Holc, K.; Köhler, K.; Pletschen, W.; Wagner, J.; Schwarz, U. T.
Belyanin, A. A. (Ed.) et al.: Novel In-Plane Semiconductor Lasers XI (SPIE 8277).
Bellingham, WA: SPIE, 2012, 82770H-1-7
(SPIE-Proceedings 8277).


Broadband tunable external cavity quantum cascade lasers for standoff detection of explosives.
Hugger, S.; Fuchs, F.; Jarvis, J. P.; Kinzer, M.; Yang, Q. K.; Bronner, W.; Driad, R.; Aidam, R.; Degreif, K.; Schnürer, F.
George, T. (ed) et al.: Micro- and nanotechnology sensors, systems, and applications IV (SPIE 8373).
Bellingham, WA: SPIE, 2012, 83732G-1-10
(SPIE-Proceedings 8373).


Preparation of periodically arranged metallic nanostructures using nanoimprint lithography.
Jüchter, S.; Hauser, H.; Wellens, Ch.; Guttowski, A.; Peters, M.; Goldschmidt, J. C.; Schwarz, U. T.; Bläsi, B.
Wehrspohn, R. (ed) et al.: Photonics for Solar Energy Systems IV (SPIE 8438).
Bellingham, WA: SPIE, 2012, 84380S-1-9
(SPIE-Proceedings 8433).


Above 2-µm emitting GaSb-based semiconductor disk laser with <100-kHz linewidth at 1000-mW output power.
Kaspar, S.; Rattunde, M.; Töpper, T.; Rösener, B.; Manz, C.; Köhler, K.; Wagner, J.
Tropper, A. (Ed.): Vertical External Cavity Surface Emitting Lasers (VECSELs) II (SPIE 8242).
Bellingham, WA: SPIE, 2012, 82420G-1-11
(SPIE-Proceedings 8242).


Electro-optically cavity dumped 2µm semiconductor disk laser emitting 3 ns pulses of 30W peak power.
Kaspar, S.; Rattunde, M.; Töpper, T.; Schwarz, U. T.; Manz, C.; Köhler, K.; Wagner, J.
Applied Physics Letters 101 (2012), 141121-1 - 4


Semiconductor disk laser at 2.05µm wavelength with <100kHz linewidth at 1W output power.
Kaspar, S.; Rattunde, M.; Töpper, T.; Manz, C.; Köhler, K.; Wagner, J.
Applied Physics Letters 100 (2012), 3, 031109-3


Single-frequency kHz-linewidth 2-µm GaSb-based semiconductor disk lasers with multiple-watt output power.
Kaspar, S.; Rattunde, M.; Töpper, T.; Manz, C.; Köhler, K.; Wagner, J.
The Conference on Lasers and Electro-Optics (CLEO 2012): Laser Science to Photonic Applications.
Washington: Optical Society of America, 2012, 2 S.


Diffraction-Limited Infrared-Imaging of the Near-Field Intensity Emitted by Quantum-Cascade Lasers.
Kinzer, M.; Yang, Q. K.; Hugger, S.; Brunner, M.; Fuchs, F.; Wagner, J.
IEEE Journal of Quantum Electronics 48 (2012), 5, 696-702


Laser processing of gallium nitride-based light-emitting diodes with ultraviolet picosecond laser pulses.
Moser, R.; Kunzer, M.; Goßler, C.; Köhler, K.; Pletschen, W.; Schwarz, U. T.; Wagner, J.
Optical Engineering 51 (2012), 114301-1-8


Laser processing of GaN-based LEDs with ultraviolet picosecond laser pulses.
Moser, R.; Kunzer, M.; Goßler, C.; Schmidt, R.; Köhler, K.; Pletschen, W.; Schwarz, U. T.; Wagner, J.
Graf, T. (ed) et al.: Laser Sources and Applications (SPIE 8433).
Bellingham, WA: SPIE, 2012, 8433Q-1-12
(SPIE-Proceedings 8433).


Effect of In incorporation into the quantum well active region on the efficiency of AlGaN-based ultraviolet light-emitting diodes.
Passow, T.; Gutt, R.; Kunzer, M.; Kirste, L.; Pletschen, W.; Forghani, K.; Scholz, F.; Köhler, K.; Wagner, J.
physica status solidi c 9 (2012), 3-4, 794-797


Thermal effects in 2.x µm vertical-external-cavity-surface-emitting lasers.
Pierscinski, K.; Pierscinska, D.; Bugajski, M.; Manz, C.; Rattunde, M.
Journal of Applied Physics 111 (2012), 053107-1-6


Polarization of eigenmodes and the effect on the anisotropic gain in laser structures on nonpolar and semipolar GaN.
Rass, J.; Wernicke, T.; Ploch, S.; Brendel, M.; Kruse, A.; Hangleiter, A.; Scheibenzuber, W.; Schwarz, U. T.; Weyers, M.; Kneissl, M.
Chyi, J.-I. (ed) et al.: Gallium Nitride Materials and Devices VII (SPIE 8262).
Bellingham, WA: SPIE, 2012, 826218-1-9
(SPIE-Proceedings 8262).


GaSb-based 2-3 µm semiconductor disk lasers: Versatile lasers for high-power and narrow linewidth emission.
Rattunde, M.; Kaspar, S.; Töpper, T.; Manz, C.; Köhler, K.; Wagner, J.
ASSP 2012: Advanced Solid-State Photonics (ASSP) 2012.
1-3


Auger effect in nonpolar quantum wells.
Schade, L.; Schwarz, U. T.; Wernicke, T.; Rass, J.; Ploch, S.; Weyers, M.; Kneissl, M.
Chyi, J.-I. (ed) et al.: Gallium Nitride Materials and Devices VII (SPIE 8262).
Bellingham, WA: SPIE, 2012, 82620K-1-9
(SPIE-Proceedings 8262).


Spectral properties of polarized light from semipolar grown InGaN quantum wells at low temperatures.
Schade, L.; Schwarz, U. T.; Wernicke, T.; Ploch, S.; Weyers, M.; Kneissl, M.
physica status solidi c 9 (2012), 3-4, 700-703


Unequal Pumping of Quantum Wells in GaN-Based Laser Diodes.
Scheibenzuber, W. G.; Schwarz, U. T.
Applied Physics Express 5 (2012), published online: 02.04.2012; DOI: 10.1143/APEX.5.042103, 042103-1-2


Free-electron laser spectroscopy of quantum well exciton dynamics.
Schneider, H.; Bhattacharyya, J.; Zybell, S.; Winnerl, S.; Helm, M.; Andrews, A. M.; Strasser, G.; Köhler, K.
International Conference on Infrared, Millimeter and Thz Waves (IRMMW-THz 2012).
Piscataway, NJ: IEEE, 2012, 1 S.


An advanced fabrication method of highly ordered ZnO nanowire arrays on silicon substrates by atomic layer deposition.
Subannajui, K.; Güder, F.; Danhof, J.; Menzel, A.; Yang, Y.; Kirste, L.; Wang, Ch. Y.; Cimalla, V.; Schwarz, U.; Zacharias, M.
Nanotechnology 23 (2012), 7 S.


Static and dynamic properties of multi-section InGaN-based laser diodes.
Sulmoni, L.; Lamy. J.-M.; Dorsaz, J.; Castiglia, A.; Carlin, J. F.; Scheibenzuber, W. G.; Schwarz, U. T.; Zeng, X.; Boiko, D. L.; Grandjean, N.
Journal of Applied Physics 112 (2012), 103112-1-8


High-power 2.0µm semiconductor disk laser-Influence of lateral lasing.
Töpper, T.; Rattunde, M.; Kaspar, S.; Moser, R.; Manz, C.; Köhler, K.; Wagner, J.
Applied Physics Letters 100 (2012), 192107-1-3


Heterodyne and spectroscopic room temperature terahertz imaging using InGaAs bow-tie diodes.
Valusis, G.; Minkevicius, L.; Kasalynas, I.; Venckevicius, R.; Seliuta, D.; Tamosiunas, V.; Lisauskas, A.; Boppel, S.; Roskos, H.G.; Köhler, K.
19th International Conference on Microwaves, Radar and Wireless Communications (MIKON 2012): May 21-23, Warsaw/Poland.
Piscataway, NJ: IEEE, 2012, 105-107


GaSb-based semiconductor disk lasers: recent advances in power scaling and narrow linewidth operation.
Wagner, J.; Rattunde, M.; Töpper, T.; Kaspar, S.; Rösener, B.; Manz, C.; Köhler, K.
Tropper, A. (Ed.): Vertical External Cavity Surface Emitting Lasers (VECSELs) II (SPIE 8242).
Bellingham, WA: SPIE, 2012, 82429D-1-5
(SPIE-Proceedings 8242).


Indium incorporation and emission wavelength of polar, nonpolar and semipolar InGaN quantum wells.
Wernicke, T.; Schade, L.; Netzel, C.; Rass, J.; Hoffmann, V.; Ploch, S.; Knauer, A.; Weyers, M.; Schwarz, U. T.; Kneissl, M.
Semiconductor Science and Technology 27 (2012), 024014-7


Beam steering and lateral hole burning in mid-infrared quantum-cascade lasers.
Yang, Q. K.; Kinzer, M.; Fuchs, F.; Hugger, S.; Hinkov, B.; Bronner, W.; Lösch, R.; Aidam, R.; Wagner, J.
physica status solidi c 9 (2012), 2, 302-305


Dispersion of effective refractive indices of mid-infared quantum cascade lasers.
Yang, Q. K.; Kinzer, M.; Aidam, R.; Driad, R.; Bronner, W.; Hugger, S.; Ostendorf, R.; Fuchs, F.; Wagner, J.
Journal of Applied Physics 112 (2012), published online: 21.11.2012; DOI: 10.1063/1.4766388, 103109-1-5


Wall-plug efficiency of mid-infrared quantum cascade lasers.
Yang, Q. K.; Schilling, C.; Ostendorf, R.; Hugger, S.; Fuchs, F.; Wagner, J.
Journal of Applied Physics 111 (2012), 5, 053111-1-9

2011

Absorption and emission properties of light emitting diode structures containing GaInN/GaN QWs.
Binder, J.; Korona, K. P.; Borysiuk, J.; Wysmolek, A.; Baeumler, M.; Köhler, K.; Kirste, L.
Acta physica polonia A 120 (2011), 5, 918-920


Lateral charge carrier diffusion in InGaN quantum wells.
Danhof, J.; Schwarz, U. T.; Kaneta, A.; Kawakami, Y.
9th International Conference on Nitride Semiconductors (ICNS 9).
2011, 1 S.


Local internal quantum efficiency of a green light emitting InGaN/GaN quantum well.
Danhof, J.; Schwarz, S. U.; Meyer, T.; Vierheilig, C.; Peter, M.
physica status solidi (b) 1-4 (2011), published online: 02.11.2011: DOI:10.1002/pssb.201147281, 4 S.


Temperature-dependent photoluminescence measurements on a sub-micrometer length scale on green light emitting InGaN/GaN quantum wells.
Danhof, J.; Vierheilig, C.; Schwarz, U. T.; Meyer, T.; Peter, M.; Hahn, B.
physica status solidi (b) 248 (2011), 5, 1270-1274


Time-of-flight measurements of charge carrier diffusion in In(x)Ga(1-x)N/GaN quantum wells.
Danhof, J.; Schwarz, U. T.; Kaneta, A.; Kawakawi, Y.
Physical Review B 84 (2011), published online:29.07.2011;DOI: 10.1103/PhysRevB.84.035324, 035324-1-5


Stand-off explosive detection on surfaces using multispectral MIR-Imaging.
Degreif, K.; Rademacher, S.; Dasheva, P.; Fuchs, F.; Hugger, S.; Schnürer, F.; Schweikert, W.
Razeghi, M. (ed) et al.: Quantum Sensing and Nanophotonic Devices VIII (SPIE 7945).
Bellingham, WA: SPIE, 2011, 79450P-1-8
(SPIE-Proceedings 7945).


Optical bistability in InGaN-based multisection laser diodes.
Dorsaz, J.; Boiko, D. L.; Sulmoni, L.; Carlin, J. F.; Scheibenzuber, W. G. / IAF; Schwarz, U. T.; Grandjean, N.
Applied Physics Letters 98 (2011), 19, 1911115-1-3


High quality AlGaN epilayers grown on sapphire using SiNx interlayers.
Forghani, K.; Klein, M.; Lipski, F.; Schwaiger, S.; Hertkorn, J.; Leute, R. A. R.; Scholz, F.; Feneberg, M.; Neuschl, B.; Thonke, K.; Klein, O.; Kaiser, U.; Gutt, R.; Passow, T.
Journal of Crystal Growth 315 (2011), 216-219


An industry perspective on the optimization of InGaN lasers and LEDs via modeling.
Gomez-Iglesias, A.; Sabathil, M.; Lermer. T.; Müller, J.; Galler, B.; Eichler, C.; Avramescu, A.; Dini, D.; Pietzonka, I.; Tautz, S.; Breidenassel, A.; Bruederl, G.; Lell, A.; Meyer, T.; Peter, M.; Lutgen, S.; Strauss, U.; Pasenow, B.; Koch, S. W.; Scheibenzuber, W.; Schwarz, U. T.
11th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD), 2011.
187-188


Processing of III-Nitride thin film light-emitting diodes via wafer bonding and laser lift-off.
Goßler, C.; Moser, R.; Kunzer, M.; Wiemer, M.; Baum, M.; Schmidt, R.; Passow, T.; Köhler, K.; Schwarz, U. T.; Wagner, J.
9th International Conference on Nitride Semiconductors (ICNS 9).
2011, 1-1


Controlling the Mg doping profile in MOVPE-grown GaN/Al(0.2)Ga(0.8)N light-emitting diodes.
Gutt, R.; Köhler, K.; Wiegert, J.; Kirste, L.; Passow, T.; Wagner, J.
physica status solidi c 8 (2011), 7-8, 2072-74


Efficient 350 nm LEDs on low edge threading dislocation density AlGaN buffer layers.
Gutt, R.; Passow, T.; Pletschen, W.; Kunzer, M.; Kirste, L.; Forghani, K.; Scholz, F.; Klein, O.; Kaiser, U.; Köhler, K.; Wagner, J.
Streubel, K. P. (Ed.) et al.: Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XV (SPIE 7954).
Bellingham, WA: SPIE, 2011, 79540Q-1-8
(SPIE-Proceedings 7954).


Near-field dynamics of broad area diode laser at very high pump levels.
Hempel, M.; Tomm, J.W.; Baeumler, M.; Konstanzer, H.; Mukherjee, J.
AIP Advances 1 (2011), 042148-6


Reduced threshold current dilute nitride Ga(NAsP)/GaP quantum well lasers grown by MOVPE.
Hossain, N.; Sweeney, S.J.; Rogowsky, S.; Ostendorf, R.; Wagner, J.; Liebich, S.; Zimprich, M.; Volz, K.; Kunert, B.; Stolz, W.
Electronics Letters 47 (2011), 16, 931-932


Sub-MHz-linewidth 200-mW actively stabilized 2.3-µm semiconductor disk laser.
Kaspar, S.; Rösener, B.; Rattunde, M.; Töpper, T.; Manz, C.; Köhler, K.; Ambacher, O.; Wagner, J.
IEEE Photonics Technology Letters 23 (2011), 20, 1538-1540


Reactor dependent starting transients of doping profiles in MOVPE grown GaN.
Köhler, K.; Gutt, R.; Müller, S.; Wiegert, J.; Menner, H.; Kirste, L.; Protzmann, H.; Heuken, M.
Journal of Crystal Growth 321 (2011), 1, 15-18


Improved quantum efficiency of 350 nm LEDs grown on low dislocation density AlGaN buffer layers.
Kunzer, M.; Gutt, R.; Kirste, L.; Passow, T.; Forghani, K.; Scholz, F.; Köhler, K.; Wagner, J.
physica status solidi c 8 (2011), 7-8, 2363-2365


Tuning of ITO properties for transparent contacts on violet to green emitting LEDs.
Kunzer, M.; Passow, T.; Pletschen, W.; Köhler, K.; Wagner, J.
9th International Conference on Nitride Semiconductors (ICNS 9).
2011, 1 S.


Gain of blue and cyan InGaN laser diodes.
Lermer. T.; Gomez-Iglesias, A.; Sabathil, M.; Müller, J.; Lutgen, S.; Strauss, U.; Pasenow, B.; Hader, J.; Moloney, J.; Koch, S. W.; Scheibenzuber, W.; Schwarz, U. T.
Applied Physics Letters 98 (2011), 2, 021115-1-3


Experimental demonstration of efficient pulsed terahertz emission from a stacked GaAs/AlGaAs p-i-n-i heterostructure.
Lisauskas, A.; Reklaitis, A.; Venckevicius, R.; Kasalynas, I.; Valusis, G.; Grigaliunaite-Vonseviciene, G.; Maestre, H.; Schmidt, J.; Blank, V.; Thomson, M. D.; Roskos, H. G.; Köhler, K.
Applied Physics Letters 98 (2011), 11, 091103-1-3


Recent results of blue and green InGaN laser diodes for laser projection.
Lutgen, S.; Dini, D.; Pietzonka, I.; Tautz, S.; Breidenassel, A.; Lell, A.; Avramescu, A.; Eichler, C.; Lermer. T.; Müller, J.; Bruederl, G.; Gomez, A.; Strauss, U.; Scheibenzuber, W. G.; Schwarz, U. T.; Pasenow, B.; Koch, S.
Belyanin, A. A. (Ed.) et al.: Novel In-Plane Semiconductor Lasers X (SPIE 7953).
Bellingham, WA: SPIE, 2011, 79530G-1-12
(SPIE-Proceedings 7953).


Micro-electroluminescence of cyan InGaN-based multiple quantum well structures.
Meyer, T.; Peter, M.; Danhof, J.; Schwarz, U. T.; Hahn, B.
physica status solidi (a) 208 (2011), 7, 1523-1525


Sub-surface channels in sapphire made by ultraviolet picosecond laser irradiation and selective etching.
Moser, R.; Ojha, N.; Kunzer, M.; Schwarz, U. T.
Optics Express 19 (2011), 24, 24738-24745


Real-time near-field evidence of optical blinking in the photoluminescence of InGaN by scanning near-field optical microscope.
Oikawa, K.; Feldmeier, C.; Schwarz, U. T.; Kawakami, Y.; Micheletto, R.
Optical Materials Express 1 (2011), 2, 158-163


Polarization dependent study of gain anisotropy in semipolar InGaN lasers.
Rass, J.; Wernicke, T.; Ploch, S.; Brendel, M.; Kruse, A.; Hangleiter, A.; Scheibenzuber, W.; Schwarz, U. T.; Weyers, M.; Kneissl, M.
Applied Physics Letters 99 (2011), 17, 171105-1-3


2µm semiconductor disk laser technology.
Rattunde, M.; Kaspar, S.; Töpper, T.; Manz, C.; Köhler, K.; Wagner, J.
Photonex 2011.
2011, 2 S.


Vibrational mode and dielectric function spectra of BGaP probed by Raman scattering and spectroscopic ellipsometry.
Rogowsky, S.; Baeumler, M.; Wolfer, M.; Kirste, L.; Ostendorf, R.; Wagner, J.; Liebich, S.; Stolz, W.; Volz, K.; Kunert, B.
Journal of Applied Physics 109 (2011), 5, 053504-1-6


2.0 µm semiconductor disk laser with a heterodyne linewidth below 10 kHz.
Rösener, B.; Kaspar, S.; Rattunde, M.; Töpper, T.; Manz, C.; Köhler, K.; Ambacher, O.; Wagner, J.
Optics Letters 36 (2011), 18, 3587-3589


Continuous-wave room-temperature operation of a 2.8 µm GaSb-based semiconductor disk laser.
Rösener, B.; Rattunde, M.; Moser, R.; Kaspar, S.; Töpper, T.; Manz, C.; Köhler, K.; Wagner, J.
Optics Letters 36 (2011), 3, 319-321


Impact of band structure and transition matrix elements on polarization properties of the photoluminescence of semipolar and nonpolar InGaN quantum wells.
Schade, L.; Schwarz, U. T.; Wernicke, H.; Weyers, M.; Kneissl, M.
physica status solidi (b) 248 (2011), 3, 639-646


On the optical polarization properties of semipolar InGaN quantum wells.
Schade, L.; Schwarz, U. T.; Wernicke, T.; Rass, J.; Ploch, S.; Weyers, M.; Kneissl, M.
Applied Physics Letters 99 (2011), 5, 051103-1-3


Fast self-heating in GaN-based laser diodes.
Scheibenzuber, W. G.; Schwarz, U. T.
Applied Physics Letters 98 (2011), 18, 181110-1-3


Measurement of the tuneable absorption in GaN-based multi-section laser diodes.
Scheibenzuber, W. G.; Schwarz, U. T.; Sulmoni, L.; Carlin, J. F.; Castiglia, A.; Grandjean, N.
physica status solidi c 8 (2011), 7-8, 2345-2347


Recombination coefficients of GaN-based laser diodes.
Scheibenzuber, W. G.; Schwarz, U. T.; Sulmoni, L.; Dorsaz, J.; Carlin, J.F.; Grandjean, N.
Journal of Applied Physics 109 (2011), 093106-1-6


Thermal resistance, gain, and antiguiding factor of GaN-based cyan laser diodes.
Scheibenzuber, W. G.; Schwarz, U. T.; Lermer. T.; Lutgen, S.; Strauss, U.
physica status solidi (a) 208 (2011), 7, 1600-1602


Dynamics of GaN-based laser diodes from violet to green.
Scheibenzuber, W. G. / IAF; Hornuss, C.; Schwarz, U. T.
Belyanin, A. A. (Ed.) et al.: Novel In-Plane Semiconductor Lasers X (SPIE 7953).
Bellingham, WA: SPIE, 2011, 79530K-1-7
(SPIE-Proceedings 7953).


Polarization switching of the optical gain in semipolar InGaN quantum wells.
Scheibenzuber, W. G. / IAF; Schwarz, U. T.
physica status solidi (b) 248 (2011), 3, 647-651


Self-Pulsation at zero absorber bias in GaN-based multisection laser diodes.
Scheibenzuber, W. G. / IAF; Hornuss, C.; Schwarz, U. T.; Sulmoni, L.; Dorsaz, J.; Carlin, J. F.; Grandjean, N.
Applied Physics Express 4 (2011), 6, 062702-1-2


The green laser diode: Completing the rainbow.
Schwarz, U. T.; Scheibenzuber, W. G.
OPN Optics & Photonics News 22 (2011), 9, 38-44


Next generation 8xx nm laser bars and single emitters.
Strauss, U.; Müller, M.; Swietlik, T.; Fehse, R.; Lauer, C.; Grönninger, G.; König, H.; Keidler, M.; Fillardet, T.; Kohl, A.; Stoiber, M.; Scholl, I.; Biesenbach, J.; Baeumler, M.; Konstanzer, H.
Zediker, S. M. (ED.): High-Power Diode Laser Technology and Applications IX (SPIE Proc 7918).
Bellingham, WA: SPIE, 2011, 79180T-1-7
(SPIE-Proceedings 7918).


Strong electric field driven carrier transport non-linearities in n-type GaAs/AlGaAs superlattices.
Subacius, L.; Venckevicius, R.; Kasalynas, I.; Seliuta, D.; Valusis, G.; Schmidt, J.; Lisauskas, A.; Roskos, H. G.; Alekseev, K.; Köhler, K.
Acta physica polonia A 119 (2011), 2, 167-169


Three-dimensional GaN for semipolar light emitters.
Wunderer, T.; Feneberg, M.; Lipski, F.; Wang, J.; Leute, R. A. R.; Schwaiger, S.; Thonke, K.; Chuvilin, A.; Kaiser, U.; Metzner, S.; Bertram, F.; Christen, J.; Beirne, G.J.; Jetter, M.; Michler, P.; Schade, L.; Vierheilig, C.; Schwarz, U. T.; Dräger, A. D.; Hangleiter, A.; Scholz, F.
physica status solidi (b) 248 (2011), 3, 549-560


Photoluminescence dynamics in GaAs/AlGaAs quantum wells under pulsed intersubband excitation.
Zybell, S.; Schneider, H.; Winnerl, S.; Wagner, M.; Köhler, K.; Helm, M.
Applied Physics Letters 99 (2011), 4, 041104-1-3

2010

Optical investigation of the BGaP/GaP/Si Material system.
Baeumler, M.; Rogowsky, S.; Wolfer, M.; Kirste, L.; Ostendorf, R.; Wagner, J.; Liebich, S.; Kunert, B.; Stolz, W.
Pavlidis, D. (ed.) et al.: EXMATEC 2010: 10th International Workshop on Expert Evaluation and Control of Compound Semiconductor Materials and Technologies.
2010, 103-104


Temperature-dependent photoluminescence measurements on a sub-micrometer length scale on green light emitting InGaN/GaN quantum wells.
Danhof, J.; Vierheilig, C.; Schwarz, U. T.; Meyer, T.; Peter, M.; Hahn, B.
physica status solidi (b) (2010), published online: 20.10.2010: DOI: 10.1002/pssb.201046108, 1-5


Imaging stand-off detection of explosives by quantum cascade laser based backscattering spectroscopy.
Fuchs, F.; Hugger, S.; Kinzer, M.; Hinkov, B.; Aidam, R.; Bronner, W.; Lösch, R.; Yang, Q. K.; Degreif, K.; Schnürer, F.; Schweikert, W.
Strojnik, M. (Ed.) et al.: Infrared Remote Sensing and Instrumentation XVIII (SPIE 7808).
2010, 780810-1-9


Imaging stand-off detection of explosives using tunable MIR quantum cascade lasers.
Fuchs, F.; Hinkov, B.; Hugger, S.; Kaster, J. M.; Aidam, R.; Bronner, W.; Köhler, K.; Yang, Q. K.; Rademacher, S.; Degreif, K.; Schnürer, F.; Schweikert, W.
Razeghi, M. (ed) et al.: Quantum Sensing and Nanophotonic Devices VII (SPIE 7608).
Bellingham, WA: SPIE, 2010, 760809-1-7
(SPIE-Proceedings 7608).


Imaging standoff detection of explosives using widely tunable midinfrared quantum cascade lasers.
Fuchs, F.; Hugger, S.; Kinzer, M.; Aidam, R.; Bronner, W.; Lösch, R.; Yang, Q. K.; Degreif, K.; Schnürer, F.
Optical Engineering 49 (2010), 11, 111127-1-8


Interplay of stimulated emission and Auger-like effect in violet and blue InGaN laser diodes.
Grzanka, S.; Perlin, P.; Czernecki, R.; Marona, L.; Bockowski, M.; Lucznik, B.; Leszczynski, M.; Khachapuridze, A.; Goss, J.; Schwarz, U.; Suski, T.
physica status solidi c 7 (2010), 7-8, 1835-1837


Reduction of the threading edge dislocation density in AlGaN epilayers by GaN nucleation for efficient 350 nm light emitting diodes.
Gutt, R.; Kirste, L.; Passow, T.; Kunzer, M.; Köhler, K.; Wagner, J.
physica status solidi (b) 247 (2010), 7, 1710-1712


Time-resolved spectral characteristics of external-cavity quantum cascade lasers and their application to stand-off detection of explosives.
Hinkov, B.; Fuchs, F.; Yang, Q. K.; Kaster, J. M.; Bronner, W.; Aidam, R.; Köhler, K.; Wagner, J.
Applied Physics B 100 (2010), 2, 253-260


Power scaling of quantum cascade lasers via multiemitter beam combining.
Hugger, S.; Aidam, R.; Bronner, W.; Fuchs, F.; Lösch, R.; Yang, Q. K.; Wagner, J.; Romasew, E.; Raab, M.; Tholl, H.D.; Höfer, B.; Matthes, A. L.
Optical Engineering 49 (2010), 11, 111111-1-5


Mid-infrared high-power diode lasers and modules.
Kelemen, M. T.; Gilly, J.; Rattunde, M.; Wagner, J.; Ahlert, S.; Biesenbach, J.
SPIE - The International Society for Optical Engineering: High-Power Diode Laser Technology and Applications VIII (SPIE 7583): Proceedings of SPIE on CD-ROM.
Bellingham, WA: SPIE, 2010, 75830O-1-8
(SPIE-Proceedings 7583).


Beam steering in mid-infrared emitting quantum-cascade lasers.
Kinzer, M.; Fuchs, F.; Hugger, S.; Hinkov, B.; Bronner, W.; Lösch, R.; Aidam, R.; Yang, Q. K.
Titterton, D. (Ed.) et al.: Technologies for Optical Countermeasures VII (SPIE 7836).
Bellingham, WA: SPIE, 2010, 78360R-1-8
(SPIE-Proceedings 7836).


Towards a deeper understanding of the reduced efficiency droop in low defect-density GaInN wide-well LEDs.
Maier, M.; Passow, T.; Kunzer, M.; Pletschen, W.; Köhler, K.; Wagner, J.
physica status solidi c 7 (2010), 7-8, 2148-2150


External cavity spectral beam combining of 4.6 µm emitting quantum cascade laser arrays.
Ostendorf, R.; Hugger, S.; Aidam, R.; Bronner, W.; Fuchs, F.; Lösch, R.; Yang, Q. K.; Wagner, J.; Romasew, E.; Raab, M.; Tholl, H.D.
ISLC 2010, 22nd IEEE International Semiconductor Laser Conference.
Piscataway, NJ: IEEE, 2010, 62-63


Ni/Ag as low resistive ohmic contact to p-type AlGaN for UV LEDs.
Passow, T.; Gutt, R.; Maier, M.; Pletschen, W.; Kunzer, M.; Schmidt, R.; Wiegert, J.; Luick, D.; Liu, S.; Köhler, K.; Wagner, J.
Streubel, K. P. (Ed.) et al.: Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XIV (SPIE 7617).
Bellingham, WA: SPIE, 2010, S.76171I-1-7
(SPIE-Proceedings 7617).


GaSb-based semiconductor disk lasers for the 2-3µm wavelength range: versatile lasers for high-power and narrow linewidth emission.
Rattunde, M.; Rösener, B.; Kaspar, S.; Moser, R.; Manz, C.; Köhler, K.; Wagner, J.
The Conference on Lasers and Electro-Optics (CLEO 2010) and The Quantum Electronics and Laser Science Conference (QELS 2010): Laser Science to Photonic Applications.
Washington: Optical Society of America, 2010, 1-2


GaSb-based optically pumped semiconductor disk lasers emitting in the 2.0-2.8 µm wavelength range.
Rösener, B.; Rattunde, M.; Moser, R.; Kaspar, S.; Manz, C.; Köhler, K.; Wagner, J.
SPIE - The International Society for Optical Engineering: Solid State Lasers XIX: Technology and Devices (SPIE 7578): Proceedings of SPIE on CD-ROM.
Bellingham, WA: SPIE, 2010, 75780X-1-8
(SPIE-Proceedings 7578).


Toward 3 micron wavelength semiconductor disk lasers.
Rösener, B.; Rattunde, M.; Manz, C.; Wagner, J.; Hopkins, J.-M.; Burns, D.; Scholle, K.
SPIE - The International Society for Optical Engineering: SPIE Newsroom: the news and technical research website of SPIE.
Bellingham, WA: SPIE, 4 p.


Correlation Between Composition and Stress for High Density Plasma CVD Silicon Nitride Films.
Sah, R. E.; Baumann, H.; Driad, R.; Wagner, J.
Journal of the Electrochemical Society 157 (2010), 2, G33-G38


Antiguiding factor of GaN-based laser diodes from UV to green.
Scheibenzuber, W. G. / IAF; Schwarz, U.; Lermer. T.; Lutgen, S.; Strauss, U.
Applied Physics Letters 97 (2010), 2, 021102-1-3


Bias-dependent absorption coefficient of the absorber section in GaN-based multisection laser diodes.
Scheibenzuber, W. G. / IAF; Schwarz, U. T.; Sulmoni, L.; Carlin, J.F.; Castiglia, A.; Grandjean, N.
Applied Physics Letters 97 (2010), 18, 181103-1-3


Polarization switching of the optical gain in semipolar InGaN quantum wells.
Scheibenzuber, W. G. / IAF; Schwarz, U. T.
physica status solidi (b) published online 15.07.2010 (2010), 6 S.


Mid-infrared semiconductor lasers for power projection and sensing.
Tholl, H.D.; Wagner, J.; Rattunde, M.; Hugger, S.; Fuchs, F.
Titterton, D. (Ed.) et al.: Technologies for Optical Countermeasures VII (SPIE 7836).
Bellingham, WA: SPIE, 2010, 78360Q-1-5
(SPIE-Proceedings 7836).


Spectral beam combining of a 980 nm tapered diode laser bar.
Vijayakumar, D.; Jensen, O.; Ostendorf, R.; Westphalen, T.; Thestrup, B.
Optics Express 18 (2010), 2, 893-898, published 06.01.2010


Rate equations analysis of external-cavity quantum cascade lasers.
Yang, Q. K.; Hinkov, B.; Fuchs, F.; Bronner, W.; Köhler, K.; Wagner, J.; Maulini, R.; Faist, J.
Journal of Applied Physics 107 (2010), 4, 043109-1 - 7

Books

2014

E-MRS 2013 Spring Meeting: Symposium J: Semiconductor Nanostructures towards Electronic and Optoelectronic Device Applications IV.
André, P. (Guest Ed.); Reece, P. (Guest Ed.); Tomm, J.W. (Guest Ed.); Ribierre, J.-C. (Guest Ed.); Moreels, I. (Guest Ed.); Christen, J. (Guest Ed.); Gil, B. (Guest Ed.); Méndez, B. (Guest Ed.); Lorenz, K. (Guest Ed.); Fraboni, B. (Guest Ed.); Ambacher, O. (Guest Ed.)
Berlin: Wiley-VCH, 2014
(E-MRS Proceedings)


Optische Polarisationsabhängigkeit semipolarer und nonpolarer InGaN Quantenfilme und ihre Ladungsträgerstatistik.
Schade, L.;
Stuttgart: Fraunhofer, 2014
(Science for Systems / Hrsg.: Ambacher, O.; 19). Zugl. Freiburg, Univ., Diss., 2013

2013

Local charge carrier diffusion and recombination in InGaN quantum wells.
Danhof, J.;
Stuttgart: Fraunhofer, 2013
(Science for Systems / Hrsg.: Ambacher, O.; 13). Zugl. Freiburg, Univ., Diss., 2013


Broadband-tunable external-cavity quantum cascade lasers for spectroscopy and stand-off detection.
Fuchs, F.; Hugger, S.; Yang, Q. K.; Jarvis, J. P.; Kinzer, M.; Ostendorf, R.; Schilling, C.; Driad, R.; Bronner, W.; Bächle, A.; Aidam, R.; Wagner, J.
In: Razeghi, M. (ed) et al.: The Wonder of Nanotechnology: Quantum Optoelectronic Devices and Applications.
Bellingham: SPIE Press, 2013, 645-671


Growth and optical properties of GaN-based non-and semipolar LEDs.
Kneissl, M.; Rass, J.; Schade, L.; Schwarz, U. T.
In: Seong, T.-Y. (Ed.) et al.: III-Nitride based light emitting diodes and applications.
Berlin, Heidelberg, New York: Springer, 2013, 83-119 S.
(Topics in Applied Physics (Springer) 126).


Verbesserung der Abbildungsqualität blauer Projektionslichtquellen.
Kopp, F.;
Stuttgart: Fraunhofer, 2013
(Science for Systems / Hrsg.: Ambacher, O.; 17). Zugl. Freiburg, Univ., Diss., 2013


Laser-µ-Bearbeitung von GaN-basierten Leuchtdioden mit ultrakurzen Laserpulsen.
Moser, R.;
Stuttgart: Fraunhofer, 2013
(Science for Systems / Hrsg.: Ambacher, O.; 14). Zugl. Freiburg, Univ., Diss., 2013

2012

Epitaxie von AlGaN-basierten Leuchtdioden für den UV-A-Wellenlängenbereich.
Gutt, R.;
Stuttgart: Fraunhofer Verlag, 2012
(Science for Systems / Hrsg.: Ambacher, O.; 6). Zugl. Freiburg i. Brsg., Univ., Diss., 2012


Konzeption und Charakterisierung von Rippenwellenleiterlasern auf Si-Substrat basierend auf dem gitterangepassten Ga(NAsP)/(B)GaP-Materialsystem.
Rogowsky, S.;
Stuttgart: Fraunhofer Verlag, 2012
(Science for Systems / Hrsg.: Ambacher, O.; 5). Zugl. Freiburg i. Brsg., Univ., Diss., 2012


Halbleiter-Scheibenlaser hoher Brillanz für den Wellenlängenbereich von 2,0 - 2,8 µm.
Rösener, B.;
Stuttgart: Fraunhofer Verlag, 2012
(Science for Systems / Hrsg.: Ambacher, O.; 8). Zugl. Freiburg i. Brsg., Univ., Diss., 2012

2011

International Workshop on Nitride Semiconductors (IWN 2010): Proceedings.
Chow, T. P. (Guest Ed.); Detchprohm, T. (Guest Ed.); Fareed, Q. (Guest Ed.); Iwaya, M. (Guest Ed.); Kneissl, M. (Guest Ed.); Schwarz, U. T. (Guest Ed.):
Berlin: Wiley-VCH, 2011


Crystal growth and wafer technology.
Walther, M.
In: Weber, H. (Ed.) et al.: Laser Physics and Applications, Subvolume B: Laser Systems, Part 3.
Berlin, Heidelberg, New York: Springer, 2011, 3-9
(Numerical data and functional relationships in science and technology: new series / Landolt-Börnstein).


Epitaxy.
Walther, M.
In: Weber, H. (Ed.) et al.: Laser Physics and Applications, Subvolume B: Laser Systems, Part 3.
Berlin, Heidelberg, New York: Springer, 2011, 11-23
(Numerical data and functional relationships in science and technology: new series / Landolt-Börnstein).


Quantum cascade lasers.
Yang, Q. K.; Ambacher, O.
In: Weber, H. (Ed.) et al.: Laser Physics and Applications, Subvolume B: Laser Systems, Part 3.
Berlin, Heidelberg, New York: Springer, 2011, 79-91
(Numerical data and functional relationships in science and technology: new series / Landolt-Börnstein).

2010

Future Security 2010, 5th Security Research Conference.
Ambacher, O. (Ed.); Fraunhofer VVS (Ed.)
2010


Effizienz von GaInN-Leuchtdioden: Struktur aktiver Schichten unter dem Einfluss substratinduzierter Defekte.
Maier, M.
Stuttgart: Fraunhofer Verlag, 2010
(Science for Systems / Hrsg.: Ambacher, O.; 1). Zugl. Freiburg i. Brsg., Univ., Diss., 2010


Long-wavelength GaSb disk lasers.
Rösener, B.; Rattunde, M.; Hopkins, J.-M.; Burns, D.; Wagner, J.
In: Okhotnikov, O. (Ed.): Semiconductor Disk Lasers: Physics and Technology.
Berlin: Wiley-VCH, 2010, 143-186